Patents by Inventor Talex Sajoto
Talex Sajoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6082714Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: July 4, 2000Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, Jun Zhao, Vincent Ku, Po Tang, Talex Sajoto, Frank Chang
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Patent number: 6077562Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: June 20, 2000Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, Jun Zhao, Talex Sajoto, Lee Luo
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Patent number: 6066209Abstract: The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.Type: GrantFiled: March 31, 1998Date of Patent: May 23, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Jun Zhao, Vincent Ku, Charles Dornfest
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Patent number: 6063199Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: May 16, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Leonid Selyutin, Vincent Ku, Jun Zhao, Charles Dornfest
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Patent number: 6056823Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: May 2, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Leonid Selyutin, Jun Zhao, Charles Dornfest
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Patent number: 6051286Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.Type: GrantFiled: August 22, 1997Date of Patent: April 18, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Lee Luo, Xiao Liang Jin, Jia-Xiang Wang, Stefan Wolff, Talex Sajoto
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Patent number: 6035101Abstract: The present invention provides systems, methods and apparatus for heating substrates in a processing chamber to temperatures up to at least 700.degree. C. In accordance with an embodiment of the invention a heater assembly with an inner core of high thermal conductivity is encased in a shell of lower thermal conductivity, creating a nearly isothermal interface between the core and shell. The inner core is brazed to the shell, promoting thermal transfer, and acts as a thermal short between opposing surfaces of the shell. The heater assembly is designed to minimize thermal stresses arising from the difference in the thermal expansion coefficients of the various components of the multi-layered heater assembly. In one embodiment of the invention, two independently-powered heating elements are arranged concentrically to each other to create a dual zone heater.Type: GrantFiled: March 26, 1998Date of Patent: March 7, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Leonid Selyutin, Jun Zhao, Stefan Wolff
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Patent number: 5994678Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.Type: GrantFiled: February 12, 1997Date of Patent: November 30, 1999Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Talex Sajoto, Leonid Selyutin, Charles Dornfest, Stefan Wolff, Lee Luo, Eller Juco
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Patent number: 5983906Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.Type: GrantFiled: August 22, 1997Date of Patent: November 16, 1999Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Lee Luo, Jia-Xiang Wang, Xiao Liang Jin, Stefan Wolff, Talex Sajoto, Mei Chang, Paul Frederick Smith
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Patent number: 5968379Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.Type: GrantFiled: February 12, 1997Date of Patent: October 19, 1999Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Charles Dornfest, Talex Sajoto, Leonid Selyutin, Stefan Wolff, Lee Luo, Harold Mortensen, Richard Palicka
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Patent number: 5964947Abstract: A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.Type: GrantFiled: May 16, 1997Date of Patent: October 12, 1999Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek
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Patent number: 5846332Abstract: A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.Type: GrantFiled: July 12, 1996Date of Patent: December 8, 1998Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek