Patents by Inventor Tamilmani Ethirajan
Tamilmani Ethirajan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11721621Abstract: Structures including stacked field-effect transistors and methods of forming a structure including stacked field-effect transistors. The structure includes a field-effect transistor having a first active gate, a second active gate, and a drain region that is positioned in a horizontal direction between the first and second active gates. The structure further includes a back-end-of-line stack having a first metal level and a second metal level over the field-effect transistor. The first metal level includes a first interconnect, a second interconnect, and a third interconnect, and the second metal level includes a fourth interconnect. The third interconnect is connected to the drain region. The third interconnect is positioned in a vertical direction between the fourth interconnect and the drain region, and the third interconnect is positioned in the horizontal direction between the first and second interconnects.Type: GrantFiled: November 16, 2021Date of Patent: August 8, 2023Assignee: GlobalFoundries U.S. Inc.Inventors: Shweta Vasant Khokale, Kaustubh Shanbhag, Tamilmani Ethirajan
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Publication number: 20230154844Abstract: Structures including stacked field-effect transistors and methods of forming a structure including stacked field-effect transistors. The structure includes a field-effect transistor having a first active gate, a second active gate, and a drain region that is positioned in a horizontal direction between the first and second active gates. The structure further includes a back-end-of-line stack having a first metal level and a second metal level over the field-effect transistor. The first metal level includes a first interconnect, a second interconnect, and a third interconnect, and the second metal level includes a fourth interconnect. The third interconnect is connected to the drain region. The third interconnect is positioned in a vertical direction between the fourth interconnect and the drain region, and the third interconnect is positioned in the horizontal direction between the first and second interconnects.Type: ApplicationFiled: November 16, 2021Publication date: May 18, 2023Inventors: Shweta Vasant Khokale, Kaustubh Shanbhag, Tamilmani Ethirajan
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Patent number: 11288430Abstract: A simulation circuit, that simulates characteristics of transistors is produced to include: an isolation body resistor representing resistance of a channel isolation portion of a transistor; a main body resistor representing resistance of main channel portion of the transistor; an isolation transistor connected to the isolation body resistor; and a body-contact transistor connected to the main body resistor. Simulated data is generated by supplying test inputs to the simulation circuit, while selectively activating either the isolation transistor or the body-contact transistor. Test data is generated by supplying the test inputs to the transistors, and measuring output of the transistors. The simulated data is compared to the test data to identify data differences. The design of the transistors is changed to reduce the data differences. The generation of test data, comparing, and design changes are repeated, until the data differences are within a threshold.Type: GrantFiled: November 27, 2017Date of Patent: March 29, 2022Assignee: GlobalFoundries U.S. Inc.Inventors: Anupam Dutta, Tamilmani Ethirajan
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Patent number: 11264470Abstract: One illustrative device disclosed herein includes a semiconductor substrate and a bipolar junction transistor (BJT) device that comprises a collector region, a base region and an emitter region. In this example, the device also includes a field effect transistor and at least one base conductive contact structure that conductively and physically contacts the base region.Type: GrantFiled: February 27, 2020Date of Patent: March 1, 2022Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Haiting Wang, Tamilmani Ethirajan, Zhenyu Hu, Tung-Hsing Lee
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Publication number: 20210335772Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.Type: ApplicationFiled: April 24, 2020Publication date: October 28, 2021Inventors: Wenjun LI, Chen PERKINS YAN, Tamilmani ETHIRAJAN, Cole E. ZEMKE
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Patent number: 11158624Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.Type: GrantFiled: April 24, 2020Date of Patent: October 26, 2021Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Wenjun Li, Chen Perkins Yan, Tamilmani Ethirajan, Cole E. Zemke
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Publication number: 20210273061Abstract: One illustrative device disclosed herein includes a semiconductor substrate and a bipolar junction transistor (BJT) device that comprises a collector region, a base region and an emitter region. In this example, the device also includes a field effect transistor and at least one base conductive contact structure that conductively and physically contacts the base region.Type: ApplicationFiled: February 27, 2020Publication date: September 2, 2021Inventors: Haiting Wang, Tamilmani Ethirajan, Zhenyu Hu, Tung-Hsing Lee
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Publication number: 20200373410Abstract: A method of fabricating a semiconductor device is provided, which includes providing a plurality of fins over a substrate and forming a plurality of first gate structures having a first gate pitch and a plurality of second gate structures having a second gate pitch traversing across a first and a second set of fins, respectively. The second gate pitch is wider than the first gate pitch. Epitaxial regions are formed between adjacent second gate structures in the second set of fins. A dielectric layer is deposited over the second gate structures and the epitaxial regions. Contact openings are formed in the dielectric layer. At least one of the contact openings is formed over the second gate structure where the second gate structure traverses across the second set of fins. The contact openings are filled with a conductive material to form contact structures electrically coupled to the second gate structures.Type: ApplicationFiled: May 26, 2019Publication date: November 26, 2020Inventors: TUNG-HSING LEE, SIPENG GU, JIEHUI SHU, HAITING WANG, ALI RAZAVIEH, WENJUN LI, KAVYA SREE DUGGIMPUDI, TAMILMANI ETHIRAJAN, BRADLEY MORGENFELD, DAVID NOEL POWER
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Patent number: 10658390Abstract: The present disclosure relates to semiconductor structures and, more particularly, to virtual drains for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches and methods of manufacture. The structure includes one or more active devices on a semiconductor on insulator material which is on top of a substrate; and a virtual drain region composed of a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate.Type: GrantFiled: July 10, 2018Date of Patent: May 19, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Edward J. Nowak, Richard F. Taylor, Tamilmani Ethirajan
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Publication number: 20200020721Abstract: The present disclosure relates to semiconductor structures and, more particularly, to virtual drains for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches and methods of manufacture. The structure includes one or more active devices on a semiconductor on insulator material which is on top of a substrate; and a virtual drain region composed of a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate.Type: ApplicationFiled: July 10, 2018Publication date: January 16, 2020Inventors: Edward J. NOWAK, Richard F. TAYLOR, Tamilmani ETHIRAJAN
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Publication number: 20190163853Abstract: A simulation circuit, that simulates characteristics of transistors is produced to include: an isolation body resistor representing resistance of a channel isolation portion of a transistor; a main body resistor representing resistance of main channel portion of the transistor; an isolation transistor connected to the isolation body resistor; and a body-contact transistor connected to the main body resistor. Simulated data is generated by supplying test inputs to the simulation circuit, while selectively activating either the isolation transistor or the body-contact transistor. Test data is generated by supplying the test inputs to the transistors, and measuring output of the transistors. The simulated data is compared to the test data to identify data differences. The design of the transistors is changed to reduce the data differences. The generation of test data, comparing, and design changes are repeated, until the data differences are within a threshold.Type: ApplicationFiled: November 27, 2017Publication date: May 30, 2019Applicant: GLOBALFOUNDRIES INC.Inventors: Anupam Dutta, Tamilmani Ethirajan
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Patent number: 10090209Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).Type: GrantFiled: June 6, 2017Date of Patent: October 2, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts
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Patent number: 9996650Abstract: Disclosed are a system, a method and a computer program product for accurately modeling the performance of a body-contacted, asymmetric double gate, dynamically depleted (DD), semiconductor-on-insulator (SOI) field effect transistor (FET). This modeling can be performed, using iterative processing, to determine the conditions (e.g., back gate bias voltage, front gate bias voltage, body resistance and body charge) under which the FET channel region transitions from being in a partially depleted (PD) state such that the FET functions as a PD SOI FET to being in a fully depleted (FD) state such that the FET functions as a FD SOI FET. Once these conditions are known (i.e., once the model is generated), the DD SOI FET can be incorporated into top-level integrated circuit designs with specifications that either meet the conditions or do not meet the conditions, depending upon the desired function of the DD SOI FET within the integrated circuit.Type: GrantFiled: March 17, 2015Date of Patent: June 12, 2018Assignee: International Business Machines CorporationInventors: Anupam Dutta, Tamilmani Ethirajan
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Patent number: 9841134Abstract: Systems include, among other components, fixed and mobile sensors positioned within a pipe network containing a substance (such as a liquid, gas, or low-viscosity solid). In addition, systems include a mobile transceiver device positioned within the pipe network. The mobile transceiver device moves through the substance and the pipe network, and the mobile transceiver device is in wireless communication with the sensors. Systems also include a receiver that is external to the pipe network, and the receiver is in communication with the mobile transceiver device. In operation, the mobile transceiver device wirelessly receives sensor data from the sensors, the mobile transceiver device can aggregate the sensor data from multiple sensors, and the mobile transceiver device transmits the aggregated sensor data wirelessly to the receiver.Type: GrantFiled: February 1, 2016Date of Patent: December 12, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Tamilmani Ethirajan, Ninad D. Sathaye, Ashwin Srinivas
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Publication number: 20170271213Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).Type: ApplicationFiled: June 6, 2017Publication date: September 21, 2017Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts
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Patent number: 9748271Abstract: The present invention relates generally to integrated circuits and more particularly, to a structure and method of forming a hybrid circuit including a tunnel field-effect transistor (TFET) and a conventional field effect transistor (FET). Embodiments of the present invention include a hybrid amplifier which features a TFET common-source feeding a common-gate conventional FET (e.g. a MOSFET). A TFET gate may be electrically isolated from an output from a conventional FET. Thus, a high impedance input may be received by a TFET with a high-isolation output (i.e. low capacitance) at a conventional FET. A hybrid circuit amplifier including a TFET and a conventional FET may have a very high input impedance and a low miller capacitance.Type: GrantFiled: April 6, 2016Date of Patent: August 29, 2017Assignee: International Business Machines CorporationInventors: Brent A. Anderson, Tamilmani Ethirajan, Edward J. Nowak
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Publication number: 20170219157Abstract: Systems include, among other components, fixed and mobile sensors positioned within a pipe network containing a substance (such as a liquid, gas, or low-viscosity solid). In addition, systems include a mobile transceiver device positioned within the pipe network. The mobile transceiver device moves through the substance and the pipe network, and the mobile transceiver device is in wireless communication with the sensors. Systems also include a receiver that is external to the pipe network, and the receiver is in communication with the mobile transceiver device. In operation, the mobile transceiver device wirelessly receives sensor data from the sensors, the mobile transceiver device can aggregate the sensor data from multiple sensors, and the mobile transceiver device transmits the aggregated sensor data wirelessly to the receiver.Type: ApplicationFiled: February 1, 2016Publication date: August 3, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Tamilmani Ethirajan, Ninad D. Sathaye, Ashwin Srinivas
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Patent number: 9721059Abstract: Disclosed are integrated circuit (IC) design methods, systems and computer program products. During IC design, an electrical netlist with built-in electrical resistance elements (i.e., electrical resistors) is extracted based on an IC design layout. A thermal netlist with built-in thermal resistance elements (i.e., thermal resistors) is automatically extracted based on the electrical netlist. This thermal netlist identifies thermal resistors, external thermal nodes and internal thermal node(s) and does so such that there is one-to-one mapping of the thermal resistors to electrical resistors in the electrical netlist, one-to-one mapping of the external thermal nodes to input, output and power supply nodes in the electrical netlist and one-to-one mapping of the internal thermal node(s) to element(s) (e.g., library and/or customized elements) in the electrical netlist.Type: GrantFiled: January 21, 2016Date of Patent: August 1, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Tamilmani Ethirajan, Ashwin Srinivas, Ananth Sundaram, Janakiraman Viraraghavan
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Publication number: 20170212978Abstract: Disclosed are integrated circuit (IC) design methods, systems and computer program products. During IC design, an electrical netlist with built-in electrical resistance elements (i.e., electrical resistors) is extracted based on an IC design layout. A thermal netlist with built-in thermal resistance elements (i.e., thermal resistors) is automatically extracted based on the electrical netlist. This thermal netlist identifies thermal resistors, external thermal nodes and internal thermal node(s) and does so such that there is one-to-one mapping of the thermal resistors to electrical resistors in the electrical netlist, one-to-one mapping of the external thermal nodes to input, output and power supply nodes in the electrical netlist and one-to-one mapping of the internal thermal node(s) to element(s) (e.g., library and/or customized elements) in the electrical netlist.Type: ApplicationFiled: January 21, 2016Publication date: July 27, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Tamilmani Ethirajan, Ashwin Srinivas, Ananth Sundaram, Janakiraman Viraraghavan
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Patent number: 9704763Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).Type: GrantFiled: January 2, 2014Date of Patent: July 11, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Amit A. Dikshit, Tamilmani Ethirajan, Shrinivas J. Pandharpure, Vaidyanathan T. Subramanian, Josef S. Watts