Abstract: A latch having increased soft error rate tolerance includes cross-coupled inverters having transistors with varying sizes. Diffusion regions of transistors coupled to storage nodes are kept small to reduce the effect of charge accumulation resulting from particles bombarding the bulk of an integrated circuit die. Transistors having gates coupled to the storage nodes are increased in size to increase the capacitance on the storage nodes. The reduced size of diffusion regions and increased size of gates on storage nodes combine to reduce the effects of accumulated charge. Diffusion region area is further reduced by reducing the size of pass gates that load normal data and scan data. A large capacitor is coupled to a feedback node within the cross-coupled inverters to further reduce the effect of accumulated charge.

Abstract: In some embodiments, the invention includes a soft error resistant latch circuit. The latch circuit includes a storage node, a feedback node, and an inverter between the storage node and the feedback node. The latch circuit also includes split connection storage node drivers and split connection feedback node drivers each connected to the storage node and the feedback node. In some embodiments, the invention includes a soft error resistant domino circuit a domino node, a keeper node, and a soft error resistant keeper. The soft error resistant keeper includes (a) a FET having a gate connected to the keeper node; (b) a FET having a gate connected to the domino node; and (c) an inverter between the domino and keeper nodes. In some embodiments, the invention includes a soft error resistant domino circuit having a domino node, a keeper node, and an inverter between the domino and keeper nodes. The circuit also includes reverse connection keeper drivers connected between the domino node and the keeper node.