Abstract: A method of manufacturing a semiconductor structure includes forming on a substrate, at intervals in a first direction, a first trench, a second trench, and a third trench, forming a first oxide layer in the first trench, forming a second oxide layer in the second trench, and forming a third oxide layer in the third trench. The method also includes forming a first semiconductor material layer in the first trench, forming a second semiconductor material layer in the second trench, and forming a third semiconductor material layer in the third trench. The method further includes forming a mask layer, performing a first etching process on the mask layer to form a first opening and a second opening, performing a second etching process at the second opening to form a third surface on the substrate, and forming a first doped region adjacent to the third surface exposed by the second opening.

Abstract: A layered interception contaminated soil sampling apparatus, including a fixed bracket and a lifting platform, the lifting platform being arranged on the top of the fixed bracket and fixedly connected to the fixed bracket; the layered interception contaminated soil sampling apparatus further including: a sample taking apparatus, arranged below the lifting platform, the top of the sample taking apparatus being fixedly connected to a movable end of the lifting platform, the sample taking apparatus being used to take a soil sample; a storage apparatus, arranged inside the fixed bracket, the storage apparatus being fixedly connected to the inside of the fixed bracket and used to store a sample taking device and samples taken; and a fixed base, arranged at the bottom of the fixed bracket and fixedly connected to the fixed bracket.

Abstract: The present disclosure relates generally to systems and methods for identifying and qualifying microbial species, such as those isolated from a human individual. Once the individual is identified as be deficient in certain microbial species, care can be given accordingly to increase the microbial species and thus improve health of the individual.

Abstract: This disclosure relates to a wide-angle lens, a camera module and a vehicle camera. The wide-angle lens sequentially includes: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. An object side surface of the first lens is convex and an image side surface of the first lens is concave. An object side surface of the second lens is convex and an image side surface of the second lens is concave. The third lens and the sixth lens are bi-concave lenses. The fourth lens, the fifth lens and the seventh lens are bi-convex lenses. The fifth lens and the sixth lens form a cemented body.

Abstract: A semiconductor structure includes: a substrate, having a cell region and a terminal region, and having a first surface, a second located in the terminal region, and a third surface located in the cell region, the second surface and the third surface being located at different levels; a first trench structure, located in the cell region, traversing the third surface to extend towards the first surface, including a first semiconductor material layer and a first oxide layer partially protruding from the third surface, and extending in a first direction parallel to the third surface; and a second trench structure, located in the cell region, including a second semiconductor material layer and a second oxide layer partially protruding from the third surface, and extending parallel to the first direction, wherein the third surface is provided with a doped region between the first trench structure and the second trench structure.

Abstract: A semiconductor rectifier device includes: an epitaxial layer, having a top surface and a bottom surface; a first doped region having a first conductivity type, located in the epitaxial layer; a first trench structure, located in the first doped region; a second trench structure adjacent to the first trench structure, located in the first doped region; a second doped region having a second conductivity type, located in the epitaxial layer between the first trench structure and the second trench structure, wherein a depth of the second doped region is less than a depth of the first trench structure; and a metal layer, located on the top surface of the epitaxial layer, covering the first trench structure, the second trench structure, and the second doped region, wherein the metal layer is in contact with the top surface, forming a Schottky interface.

Abstract: A semiconductor rectifier device comprises: an epitaxial layer having a top surface and a bottom surface; a first trench comprising a first side wall, a second side wall, and a first bottom surface; a second trench adjacent to the first trench, the second trench comprising a third side wall, a fourth side wall, and a second bottom surface; a first doped region abutting against the first side wall and at least a part of the first bottom surface of the first trench; a second doped region adjacent to and separated from the first doped region, wherein the second doped region abuts against the third side wall, the fourth side wall and the second bottom surface of the second trench; a gate structure disposed on the top surface between the first trench and the second trench; and a contact metal layer disposed on the top surface of the epitaxial layer.

Abstract: The power semiconductor device comprises a base that includes a substrate and an epitaxial layer located above the substrate, with the base comprising a unit area and a peripheral area surrounding the unit area. A junction layer is located within the peripheral area and above the epitaxial layer. A barrier layer is located within the unit area and above the epitaxial layer. A first electrode is located on the junction layer and a second electrode is located on the barrier layer. The epitaxial layer includes a doped channel located within the peripheral area, extending between the junction layer and the base substrate. Current flows from the substrate through the doped channel and the junction layer to the first electrode.

Abstract: A layered interception contaminated soil sampling apparatus, including a fixed bracket and a lifting platform, the lifting platform being arranged on the top of the fixed bracket and fixedly connected to the fixed bracket; the layered interception contaminated soil sampling apparatus further including: a sample taking apparatus, arranged below the lifting platform, the top of the sample taking apparatus being fixedly connected to a movable end of the lifting platform, the sample taking apparatus being used to take a soil sample; a storage apparatus, arranged inside the fixed bracket, the storage apparatus being fixedly connected to the inside of the fixed bracket and used to store a sample taking device and samples taken; and a fixed base, arranged at the bottom of the fixed bracket and fixedly connected to the fixed bracket.

Abstract: A semiconductor rectifier device comprises: an epitaxial layer having a top surface and a bottom surface; a first trench comprising a first side wall, a second side wall, and a first bottom surface; a second trench adjacent to the first trench, the second trench comprising a third side wall, a fourth side wall, and a second bottom surface; a first doped region abutting against the first side wall and at least a part of the first bottom surface of the first trench; a second doped region adjacent to and separated from the first doped region, wherein the second doped region abuts against the third side wall, the fourth side wall and the second bottom surface of the second trench; a gate structure disposed on the top surface between the first trench and the second trench; and a contact metal layer disposed on the top surface of the epitaxial layer.

Abstract: A method includes providing a substrate having a first conductivity type, and having a first surface and a second surface opposite to the first surface, diffusing impurities into the substrate to form a first diffusion layer having the first conductivity type and a second diffusion layer having a second conductivity type, forming a plurality of diffusion regions having the first conductivity in the second diffusion layer having the second conductivity type, forming a square groove ring in the substrate, forming a glass layer over the square groove ring, forming a first electrode layer on the first diffusion layer, and forming a second electrode layer on the second diffusion layer, wherein the second electrode layer is in contact with the plurality of diffusion regions.

Abstract: A semiconductor structure includes a substrate having a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first diffusion layer disposed in the substrate and adjacent to the first surface, and a first electrode layer disposed on the first diffusion layer. The semiconductor structure further includes a second diffusion layer disposed in the substrate and adjacent to the second surface, and a plurality of diffusion regions disposed in the second diffusion layer. The semiconductor structure further includes a second electrode layer disposed on the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.

Abstract: A method of manufacturing a semiconductor structure forming a first diffusion layer on a first electrode layer and forming a core layer over the first diffusion layer. A second diffusion layer is formed over the core layer. A plurality of diffusion regions are formed in the second diffusion layer. A second electrode layer is formed over the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.

Abstract: A simulation device and a simulation method for gas reservoir exploitation are provided. The simulation device includes a gas-liquid supply system, a simulation system, a metering system, pipes for interconnecting each system, and switches, wherein: the gas-liquid supply system includes a gas supply system and a liquid supply system; the metering system is for metering gas and/or liquid produced after the simulation system; the simulation system includes core models having at least one of micro-fractures with an aperture smaller than 1 ?m, map-fractures with an aperture between 10-20 ?m, and large-fractures with an aperture between 100-5000 ?m. The present invention is able to accurately simulate water invasion and water-controlled gas production processes of different fractured gas reservoirs under different bottom water energies.

Abstract: A semiconductor structure includes a substrate having a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first diffusion layer disposed in the substrate and adjacent to the first surface, and a first electrode layer disposed on the first diffusion layer. The semiconductor structure further includes a second diffusion layer disposed in the substrate and adjacent to the second surface, and a plurality of diffusion regions disposed in the second diffusion layer. The semiconductor structure further includes a second electrode layer disposed on the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.

Abstract: This disclosure relates to a wide-angle lens, a camera module and a vehicle camera. The wide-angle lens sequentially includes: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. An object side surface of the first lens is convex and an image side surface of the first lens is concave. An object side surface of the second lens is convex and an image side surface of the second lens is concave. The third lens and the sixth lens are bi-concave lenses. The fourth lens, the fifth lens and the seventh lens are bi-convex lenses. The fifth lens and the sixth lens form a cemented body.

Abstract: A simulation device and a simulation method for gas reservoir exploitation are provided. The simulation device includes a gas-liquid supply system, a simulation system, a metering system, pipes for interconnecting each system, and switches, wherein: the gas-liquid supply system includes a gas supply system and a liquid supply system; the metering system is for metering gas and/or liquid produced after the simulation system; the simulation system includes core models having at least one of micro-fractures with an aperture smaller than 1 ?m, map-fractures with an aperture between 10-20 ?m, and large-fractures with an aperture between 100-5000 ?m. The present invention is able to accurately simulate water invasion and water-controlled gas production processes of different fractured gas reservoirs under different bottom water energies.

Abstract: An experimental device for carbon dioxide imbition, diffusion and oil discharge in a tight oil reservoir includes: a multistage rock core holder connected with a confining pressure pump and including a pair of connecting holes arranged at an upper end and a lower end thereof with an oil filler pipe connecting therebetween, a crude oil injection device and a recovery device respectively connected to the upper and lower ends, an intermediate container connected to both a high-pressure cylinder and an injection pump, a return pressure pump, a collection device and a control system. A plurality of rows of openings is arranged at a side of the multistage rock core holder to act as a gas inlet connected with the intermediate container via a pipeline, and a gas outlet connected with the recovery device; heating layers are arranged at inner walls of the multistage rock core holder and the intermediate container.

Abstract: Disclosed is a method of inhibiting growth of a melanoma cancer cell. The method includes contacting the melanoma cancer cell with an effective amount of a composition and the composition contains polymethoxyflavone. The polymethoxyflavone can be applied in an amount of 0.1 ?mol/L-1000 ?mol/L. A method of treating a subject having melanoma with the above discussed composition is also included.

Abstract: A method to detect liver fibrosis or for the differential diagnosis of non-alchohlic fatty liver disease (NAFLD) in a subject is provided. The method comprises analyzing a biological sample from a subject to determine an intestinal microbiome signature for the subject, and inspecting the intestinal microbiome signature relative to a reference intestinal microbiome signature to detect presence or absence of liver fibrosis.