Abstract: Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: Aminocyclohexyl ether compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses uses for the compounds and compositions, including the treatment of arrhythmia.

Abstract: Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: STI structures with step height control are produced using a relatively thin nitrogen-containing layer formed over a substrate. The nitrogen-containing layer may consist of SiN and SiON films with a combined thickness of 900 angstroms or less. Trench openings are formed to extend through the nitrogen-containing layer and into the substrate. Chemical vapor deposition is used to form a dielectric such as an oxide within the trench openings and over the top surface of the nitrogen-containing layer. A polishing operation is used to partially polish the CVD dielectric layer leaving a reduced thickness over the nitrogen-containing layer, and then a dry etch is used to remove the dielectric from over the nitrogen-containing layer and uniformly recede the top surface of the dielectric within the trench. Dishing effects are avoided. The nitrogen-containing layer is removed to produce STI structures with step heights of less than 500 angstroms.

Abstract: Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: STI structures with step height control are produced using a relatively thin nitrogen-containing layer formed over a substrate. The nitrogen-containing layer may consist of SiN and SiON films with a combined thickness of 900 angstroms or less. Trench openings are formed to extend through the nitrogen-containing layer and into the substrate. Chemical vapor deposition is used to form a dielectric such as an oxide within the trench openings and over the top surface of the nitrogen-containing layer. A polishing operation is used to partially polish the CVD dielectric layer leaving a reduced thickness over the nitrogen-containing layer, and then a dry etch is used to remove the dielectric from over the nitrogen-containing layer and uniformly recede the top surface of the dielectric within the trench. Dishing effects are avoided. The nitrogen-containing layer is removed to produce STI structures with step heights of less than 500 angstroms.

Abstract: The invention relates to trifluoromethyl substituted benzamide compounds of the formula I, pharmaceuticals comprising these compounds, their use as or for the manufacture of pharmaceuticals, particularly as inhibitors of protein kinases, especially of ephrin receptor kinases, and/or the treatment of a condition, disorder or disease state mediated by a protein kinase activity and/or a proliferative disease, methods of treatment comprising administering the compounds, especially of therapeutic and prophylactic treatment, methods for the manufacture of the compounds and novel intermediates and partial steps for their synthesis.

Abstract: Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: Abstract of the Disclosure Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: Ion channel modulating compounds are disclosed. The compounds of the present invention may be incorporated in compositions and kits. The present invention also discloses a variety of in vitro and in vivo uses for the compounds and compositions, including the treatment of arrhythmia and the production of analgesia and local anesthesia.

Abstract: A microelectronic device including a substrate having a top metal layer, a first passivation layer overlying the substrate and wherein the passivation layer includes a via defined at least in part by a side wall of the passivation layer, and wherein the via overlies the top metal layer, a dielectric spacer positioned the via and the spacer having and inner wall with arcuate shape, an the electrically conductive redistribution layer having a portion positioned overlying the inner wall of the spacer and wherein the redistribution layer includes a portion in electrical contact with the top metal layer.