Abstract: An over-current protection circuit includes a first connector, a first current measuring unit, a first switch unit, a first resistor unit, and a second connector. The first connector is electrically coupled to a power supply unit (PSU). When a current of the first resistor unit measured by the first current measuring unit is less than a first reference value, the first switch unit is turned on, and the second connector receives a first power supply from the PSU. When the current of the first resistor unit measured by the first current measuring unit is greater than or equal to the first reference value, the first switch unit is turned off, and the second connector does not receive the first power supply from the PSU.

Abstract: Disclosed are a series of diaza-benzofluoranthrene compounds. The present invention particularly relates to a compound represented by formula (I), pharmaceutically acceptable salts or tautomers thereof.

Abstract: Monolithic integration of low-capacitance p-n junctions and low-resistance p-n junctions (when conducting in reverse bias) is provided. Three epitaxial layers are used. The low-capacitance junctions are formed by the top two epitaxial layers. The low-resistance p-n junction is formed in the top epitaxial layer, and two buried structures at interfaces between the three epitaxial layers are used to provide a high doping region that extends from the low-resistance p-n junction to the substrate, thereby providing low resistance to current flow. The epitaxial layers are lightly doped as required by the low-capacitance junction design, so the buried structures are needed for the low-resistance p-n junction. The high doping region is formed by diffusion of dopants from the substrate and from the buried structures during thermal processing.

Abstract: The present disclosure provides a sweep velocity-locked laser pulse generator (SV-LLPG) controlled using a digital phase locked loop (DPLL) circuit. The SV-LLPG is utilized for the interrogation of sub-terahertz-range fiber structures for sensing applications that require real-time data collection with mm-level spatial resolution. A laser generates chirped laser pulses via injection current modulation and a DPLL circuit locks the optical frequency sweep velocity. A high-quality linearly chirped laser pulse with a frequency excursion of 117.69 GHz at optical communication bands using a distributed feedback laser is provided.

Abstract: This application discloses at least a kernel repair method and apparatus. An embodiment of the method includes: loading a patch for repairing a to-be-repaired object function in a kernel, the patch being written in a memory-safe language subset of a non-memory-safe language or a memory-safe language; executing the patch using a memory-safe language engine; receiving a call request for calling a repair interface to repair the object function during the executing of the patch, wherein the repair interface is an interface provided by the memory-safe language engine and used for repairing a function; and executing the requested repair interface to repair the object function. As such, the hot patching and security of a kernel can be achieved.

Abstract: The present invention belongs to the technical field of semiconductors and discloses a copolar integrated diode, including a plurality of diode structures sharing anodes or cathodes. The copolar integrated diode comprises a semiconductor substrate; a low-doped drift region is doped on the semiconductor substrate; two or more electrodes are connected to the low-doped drift region; wherein, between the low-doped drift region and the semiconductor substrate or in the case of forming a PN junction in the low-doped drift region, the distances from the two or more electrodes to the PN junction of the diode structure are different. The present invention provides an integrated structure of a plurality of diodes, which is low in space occupancy and high in security.

Abstract: The disclosure relates to a fire extinguishing composition containing a transition metal compound, comprising a salt of an organic acid of the fourth period elements in a subgroup and the group VIII; and using a pyrotechnic agent as a heat source and a power source, reacting through heat emitted by igniting the pyrotechnic agent to burn and outputting a fire extinguishing material.

Abstract: The present disclosure provides a novel distributed coaxial cable strain sensor that can measure a strain profile over the entire length of a cable. Individual strain sensing elements are constructed using Fabry-Perot interferometers, coaxial cable Bragg gratings, or other reflectometry-based sensing structures. By assembling three or more strain sensors together in a bundle, a coaxial cable shape sensing device can be constructed which is capable of accurate three dimensional position measurement.

Abstract: The present disclosure provides a novel fiber optic sensing device using ultra-weak, terahertz-range reflector structures. A fiber optic sensor device for distributed measurements (strain/temperature) includes an optical fiber detection arm having an inner core extending along a length of the optical fiber, an outer cladding surrounding the inner core, and at least one ultra-weak, terahertz-range reflector structure. Each reflector structure is comprised of two or more ultra-weak range reflectors (gratings) written at a spacing corresponding to the terahertz range and formed along a length of the inner core of the optical fiber. A narrow bandwidth, tunable laser interrogation system interrogates the optical fiber and measures changes in reflections and interference patterns caused by physical changes in the optical fiber.

Abstract: The present disclosure provides a sweep velocity-locked laser pulse generator (SV-LLPG) controlled using a digital phase locked loop (DPLL) circuit. The SV-LLPG is utilized for the interrogation of sub-terahertz-range fiber structures for sensing applications that require real-time data collection with mm-level spatial resolution. A laser generates chirped laser pulses via injection current modulation and a DPLL circuit locks the optical frequency sweep velocity. A high-quality linearly chirped laser pulse with a frequency excursion of 117.69 GHz at optical communication bands using a distributed feedback laser is provided.

Abstract: Disclosed in the present invention is a metallic oxysalt fire extinguishing composition; the fire extinguishing composition comprises a metallic oxysalt compound and a flame-retardant extinguishing component, their proportion being respectively as follows: 30%-95% of the metallic oxysalt compound and 5%-70% of the flame-retardant extinguishing component. A pyrotechnic composition is used as the heat source and the power source of the fire extinguishing composition in the present invention, by igniting the pyrotechnic composition, the fire extinguishing composition being heated and subjected to a decomposition reaction by using high temperature generated by means of combustion of the pyrotechnic composition, large quantities of substances capable of extinguishing fire being generated, and the fire extinguishing substances along with the pyrotechnic composition being ejected from the nozzle of a fire extinguishing apparatus, thus achieving the purpose of extinguishing fire.

Abstract: Monolithic integration of low-capacitance p-n junctions and low-resistance p-n junctions (when conducting in reverse bias) is provided. Three epitaxial layers are used. The low-capacitance junctions are formed by the top two epitaxial layers. The low-resistance p-n junction is formed in the top epitaxial layer, and two buried structures at interfaces between the three epitaxial layers are used to provide a high doping region that extends from the low-resistance p-n junction to the substrate, thereby providing low resistance to current flow. The epitaxial layers are lightly doped as required by the low-capacitance junction design, so the buried structures are needed for the low-resistance p-n junction. The high doping region is formed by diffusion of dopants from the substrate and from the buried structures during thermal processing.

Abstract: A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the semiconductor substrate, and a drain region doped by the second conducting type and on the semiconductor substrate. One or more drain layers doped by the second conducting type and on the semiconductor substrate span between the body region and the drain region. An insulating layer is formed on at least a portion of the body region and over the one or more drain layers. A voltage regulating layer on the insulating layer can produce voltage distributions in the one or more drain layers to deplete charge carriers to increase blockage voltage in an off state, and to accumulate charge carriers in an on state to reduce on-state resistance.

Abstract: A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the semiconductor substrate, and a drain region doped by the second conducting type and on the semiconductor substrate. One or more drain layers doped by the second conducting type and on the semiconductor substrate span between the body region and the drain region. An insulating layer is formed on at least a portion of the body region and over the one or more drain layers. A voltage regulating layer on the insulating layer can produce voltage distributions in the one or more drain layers to deplete charge carriers to increase blockage voltage in an off state, and to accumulate charge carriers in an on state to reduce on-state resistance.

Abstract: A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the semiconductor substrate, and a drain region doped by the second conducting type and on the semiconductor substrate. One or more drain layers doped by the second conducting type and on the semiconductor substrate span between the body region and the drain region. An insulating layer is formed on at least a portion of the body region and over the one or more drain layers. A voltage regulating layer on the insulating layer can produce voltage distributions in the one or more drain layers to deplete charge carriers to increase blockage voltage in an off state, and to accumulate charge carriers in an on state to reduce on-state resistance.