Patents by Inventor Tao Wei

Tao Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170084716
    Abstract: Monolithic integration of low-capacitance p-n junctions and low-resistance p-n junctions (when conducting in reverse bias) is provided. Three epitaxial layers are used. The low-capacitance junctions are formed by the top two epitaxial layers. The low-resistance p-n junction is formed in the top epitaxial layer, and two buried structures at interfaces between the three epitaxial layers are used to provide a high doping region that extends from the low-resistance p-n junction to the substrate, thereby providing low resistance to current flow. The epitaxial layers are lightly doped as required by the low-capacitance junction design, so the buried structures are needed for the low-resistance p-n junction. The high doping region is formed by diffusion of dopants from the substrate and from the buried structures during thermal processing.
    Type: Application
    Filed: November 30, 2016
    Publication date: March 23, 2017
    Inventors: Andrew J. Morrish, Tao Wei
  • Publication number: 20160329396
    Abstract: A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the semiconductor substrate, and a drain region doped by the second conducting type and on the semiconductor substrate. One or more drain layers doped by the second conducting type and on the semiconductor substrate span between the body region and the drain region. An insulating layer is formed on at least a portion of the body region and over the one or more drain layers. A voltage regulating layer on the insulating layer can produce voltage distributions in the one or more drain layers to deplete charge carriers to increase blockage voltage in an off state, and to accumulate charge carriers in an on state to reduce on-state resistance.
    Type: Application
    Filed: July 18, 2016
    Publication date: November 10, 2016
    Inventor: Tao Wei
  • Patent number: 9431532
    Abstract: A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the semiconductor substrate, and a drain region doped by the second conducting type and on the semiconductor substrate. One or more drain layers doped by the second conducting type and on the semiconductor substrate span between the body region and the drain region. An insulating layer is formed on at least a portion of the body region and over the one or more drain layers. A voltage regulating layer on the insulating layer can produce voltage distributions in the one or more drain layers to deplete charge carriers to increase blockage voltage in an off state, and to accumulate charge carriers in an on state to reduce on-state resistance.
    Type: Grant
    Filed: September 3, 2015
    Date of Patent: August 30, 2016
    Assignee: PowerWyse, Inc.
    Inventor: Tao Wei
  • Publication number: 20160240669
    Abstract: A high voltage power MOSFET includes a semiconductor substrate doped by a first conducting type, a source doped by a second conducting type and over the semiconductor substrate, and a drain region doped by the second conducting type and on the semiconductor substrate. One or more drain layers doped by the second conducting type and on the semiconductor substrate span between the body region and the drain region. An insulating layer is formed on at least a portion of the body region and over the one or more drain layers. A voltage regulating layer on the insulating layer can produce voltage distributions in the one or more drain layers to deplete charge carriers to increase blockage voltage in an off state, and to accumulate charge carriers in an on state to reduce on-state resistance.
    Type: Application
    Filed: September 3, 2015
    Publication date: August 18, 2016
    Inventor: Tao Wei
  • Publication number: 20160226237
    Abstract: An over-current protection circuit includes a first connector, a first current measuring unit, a first switch unit, a first resistor unit, and a second connector. The first connector is electrically coupled to a power supply unit (PSU). When a current of the first resistor unit measured by the first current measuring unit is less than a first reference value, the first switch unit is turned on, and the second connector receives a first power supply from the PSU. When the current of the first resistor unit measured by the first current measuring unit is greater than or equal to the first reference value, the first switch unit is turned off, and the second connector does not receive the first power supply from the PSU.
    Type: Application
    Filed: May 18, 2015
    Publication date: August 4, 2016
    Inventors: MING-TAO WEI, QI-SHENG XU, SUNG-KUO KU
  • Patent number: 9361040
    Abstract: System and methods are provided for data storage management in a memory device. A first logical block corresponding to a plurality of first physical blocks of a memory device is selected. A source physical block within the first physical blocks is determined, the source physical block including less valid data than one or more second physical blocks within the first physical blocks. A target physical block of the memory device is obtained. The valid data in the source physical block is copied to the target physical block. The source physical block is released for storing new data.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: June 7, 2016
    Assignee: MARVELL INTERNATIONAL LTD.
    Inventors: Tao Wei, Jacky Feng, Ke Wei
  • Patent number: 9295864
    Abstract: Disclosed is a fire extinguishing composition of copper salts, which comprises a compound of copper salts and a fire retardant component with the content of 30 wt %-95 wt % for the former and 5 wt %-70 wt % for the latter respectively. A pyrotechnic agent in the composition serves as heat source and power source, and through being ignited, the pyrotechnic agent is burnt to generate high temperature to enable the composition to perform decomposition reaction so that a large quantity of the resulting fire extinguishing substances can be spouted out with the pyrotechnic agent to achieve an object of fire extinguishing. The fire extinguishing composition of copper salts can decrease the quantity of heat released by combustion of the pyrotechnic agent rapidly and efficiently, thus greatly reducing the nozzle temperature of a fire extinguishing apparatus and a sprayed substance, avoiding use of a complicated cooling system of the fire extinguishing apparatus, and also eliminating the danger of a secondary fire.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: March 29, 2016
    Assignee: XI'AN J&R FIRE FIGHTING EQUIPMENT CO., LTD.
    Inventors: Tao Ji, Tao Wei
  • Publication number: 20160039690
    Abstract: The present invention relates to an apparatus and a method for treating ballast water, and an exemplary embodiment of the present invention provides a ballast water treatment apparatus including: a tank; a spray nozzle which supplies ballast water in the form of droplets into the tank; and a gas circulation unit which supplies inert gas to the spray nozzle, and sucks inert gas that is not dissolved in the ballast water in the tank.
    Type: Application
    Filed: August 10, 2015
    Publication date: February 11, 2016
    Inventors: Chang Ha LEE, Yongha PARK, Jae-Hoon HONG, Tao WEI, Doo Wook KIM, Jae-Jeong KIM, Pil Rip JEON
  • Publication number: 20150251036
    Abstract: Disclosed in the present invention is a metallic oxysalt fire extinguishing composition; the fire extinguishing composition comprises a metallic oxysalt compound and a flame-retardant extinguishing component, their proportion being respectively as follows: 30%-95% of the metallic oxysalt compound and 5%-70% of the flame-retardant extinguishing component. A pyrotechnic composition is used as the heat source and the power source of the fire extinguishing composition in the present invention, by igniting the pyrotechnic composition, the fire extinguishing composition being heated and subjected to a decomposition reaction by using high temperature generated by means of combustion of the pyrotechnic composition, large quantities of substances capable of extinguishing fire being generated, and the fire extinguishing substances along with the pyrotechnic composition being ejected from the nozzle of a fire extinguishing apparatus, thus achieving the purpose of extinguishing fire.
    Type: Application
    Filed: September 18, 2013
    Publication date: September 10, 2015
    Applicant: XI'AN J&R FIRE FIGHTING EQUIPMENT CO., LTD.
    Inventors: Tao Ji, Tao Wei, Wei Tian, Shengxin Liu
  • Publication number: 20150240117
    Abstract: A coating material, including a bottom layer, a middle layer and a surface layer. The bottom layer is an epoxy mortar having a thickness of between 1 and 3 mm, the middle layer is an epoxy resin adhesive having a thickness of between 0.1 and 0.5 mm, and the surface layer is a nanomaterial-modified polyaspartic having a thickness of between 0.3 and 0.5 mm. The epoxy resin adhesive has a viscosity of between 50 and 200 mPa·s.
    Type: Application
    Filed: May 8, 2015
    Publication date: August 27, 2015
    Inventors: Liang CHEN, Zhen LI, Zaiqin WANG, Huaquan YANG, Wei HAN, Chengjing XIAO, Tao WEI, Xiaomei SHAO, Jing FENG, Lingmin LIAO, Jian ZHANG, Da ZHANG, Xiaohu YAN
  • Publication number: 20150221630
    Abstract: Monolithic integration of low-capacitance p-n junctions and low-resistance p-n junctions (when conducting in reverse bias) is provided. Three epitaxial layers are used. The low-capacitance junctions are formed by the top two epitaxial layers. The low-resistance p-n junction is formed in the top epitaxial layer, and two buried structures at interfaces between the three epitaxial layers are used to provide a high doping region that extends from the low-resistance p-n junction to the substrate, thereby providing low resistance to current flow. The epitaxial layers are lightly doped as required by the low-capacitance junction design, so the buried structures are needed for the low-resistance p-n junction. The high doping region is formed by diffusion of dopants from the substrate and from the buried structures during thermal processing.
    Type: Application
    Filed: February 2, 2015
    Publication date: August 6, 2015
    Inventors: Andrew J. Morrish, Tao Wei
  • Publication number: 20150190664
    Abstract: The disclosure relates to a fire extinguishing composition containing a transition metal compound, comprising a salt of an organic acid of the fourth period elements in a subgroup and the group VIII; and using a pyrotechnic agent as a heat source and a power source, reacting through heat emitted by igniting the pyrotechnic agent to burn and outputting a fire extinguishing material.
    Type: Application
    Filed: August 16, 2012
    Publication date: July 9, 2015
    Applicant: XI'AN J&R FIRE FIGHTING EQUIPMENT CO., LTD.
    Inventors: Tao Wei, Tao Ji, Shengxin Liu
  • Patent number: 9046342
    Abstract: A coaxial cable sensor device with periodic impedance discontinuities along the length of its cable. The cable comprises an inner conductor, insulating material disposed around the length of the inner conductor, and an outer conductor disposed around the insulating material. The periodic impedance discontinuities are created by physical deformations or material alterations to at least one of the inner conductor, the outer conductor, and the insulating material. The sensor device may be used to measure temperature, pressure, strain, and acoustic waves in building structures, and is well suited for down-hole or underwater applications.
    Type: Grant
    Filed: April 2, 2012
    Date of Patent: June 2, 2015
    Assignee: HABsonic, LLC
    Inventors: Hai Xiao, Jun Fan, Tao Wei, Songping Wu
  • Publication number: 20140284659
    Abstract: A transient voltage suppressor (TVS) device design compatible with normal IC wafer process is provided. Instead of a thick base that requires double-sided wafer processing, a much thinner base with a modulated doping profile is used. In this base, a high doping layer is sandwiched by two lower layers of the same or different doping. The base is then sandwiched by two electrodes having opposite doping relative to the base center layer. In the base, the two lower doping layers will determine the breakdown voltage. The middle layer is used to reduce the transistor gain and thus produce an acceptable snapback characteristic. The presence of the higher doped middle layer allows the total base width to be as low as 5 ?m for a breakdown voltage of about 30 V.
    Type: Application
    Filed: March 21, 2014
    Publication date: September 25, 2014
    Inventors: Tao Wei, Andrew J. Morrish
  • Patent number: D720738
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: January 6, 2015
    Assignee: Otter Products, LLC
    Inventors: Dustin S. Rodriguez, Tao-Wei Chang
  • Patent number: D761072
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: July 12, 2016
    Assignee: OTTER PRODUCTS, LLC
    Inventor: Tao-Wei Chang
  • Patent number: D763842
    Type: Grant
    Filed: March 1, 2015
    Date of Patent: August 16, 2016
    Assignee: OTTER PRODUCTS, LLC
    Inventors: Tao-Wei Chang, Patrick J. Nelson
  • Patent number: D765635
    Type: Grant
    Filed: March 1, 2015
    Date of Patent: September 6, 2016
    Assignee: OTTER PRODUCTS, LLC
    Inventors: Tao-Wei Chang, Ross V. Bulkley
  • Patent number: D771611
    Type: Grant
    Filed: March 1, 2015
    Date of Patent: November 15, 2016
    Assignee: Otter Products, LLC
    Inventors: Tao-Wei Chang, Ryan D. Sellden
  • Patent number: D772881
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: November 29, 2016
    Assignee: Otter Products, LLC
    Inventors: Tao-Wei Chang, Lucas B. Weller, Richard Rodriguez, John P. Fitzgerald