Patents by Inventor Tao-Wen Chung
Tao-Wen Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8614604Abstract: A method of sharing inductors for inductive peaking of an amplifier having at least two stages includes calculating a single stage inductance of a single stage of the at least two stages for inductive peaking in order to have a stable impulse response. A shared inductance is calculated for inductive peaking by dividing the single stage inductance by a number of stages of the at least two stages. At least two inductors having the shared inductance are shared among the at least two stages for inductive peaking.Type: GrantFiled: December 6, 2011Date of Patent: December 24, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tao-Wen Chung, Chan-Hong Chern, Ming-Chieh Huang, Chih-Chang Lin, Yuwen Swei
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Publication number: 20130335145Abstract: A transimpedance amplifier includes a first inverter having a first input node and a first output node. The first input node is configured to be coupled to an input signal. A second inverter has a second input node and a second output node. The second input node is configured to receive a reference voltage terminal. The first inverter and the second inverter are configured to provide a differential output voltage signal between the first output node and the second output node.Type: ApplicationFiled: June 19, 2012Publication date: December 19, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tsung-Ching HUANG, Chan-Hong CHERN, Tao Wen CHUNG, Ming-Chieh HUANG, Chih-Chang LIN
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Publication number: 20130141170Abstract: A method of sharing inductors for inductive peaking of an amplifier having at least two stages includes calculating a single stage inductance of a single stage of the at least two stages for inductive peaking in order to have a stable impulse response. A shared inductance is calculated for inductive peaking by dividing the single stage inductance by a number of stages of the at least two stages. At least two inductors having the shared inductance are shared among the at least two stages for inductive peaking.Type: ApplicationFiled: December 6, 2011Publication date: June 6, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tao Wen CHUNG, Chan-Hong CHERN, Ming-Chieh HUANG, Chih-Chang LIN, Yuwen SWEI
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Patent number: 8450672Abstract: An integrated circuit structure includes an image sensor cell, which further includes a photo transistor configured to sense light and to generate a current from the light.Type: GrantFiled: March 31, 2010Date of Patent: May 28, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shine Chung, Tao-Wen Chung, Fu-Lung Hsueh
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Patent number: 8451655Abstract: A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.Type: GrantFiled: February 2, 2012Date of Patent: May 28, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shine Chung, Hung-Sen Wang, Tao-Wen Chung, Chun-Jung Lin, Yu-Jen Wang
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Publication number: 20130120884Abstract: An input/output (I/O) circuit includes an electrostatic discharge (ESD) protection circuit electrically coupled with an output node of the I/O circuit. At least one inductor and at least one loading are electrically coupled in a series fashion and between the output node of the I/O circuit and a power line. A circuitry is electrically coupled with a node between the at least one inductor and the at least one loading. The circuitry is operable to increase a current flowing through the at least one inductor during a signal transition.Type: ApplicationFiled: November 10, 2011Publication date: May 16, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tao Wen Chung, Chan-Hong Chern, Ming-Chieh Huang, Chih-Chang Lin, Yuwen Swei
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Publication number: 20130121396Abstract: A Decision Feedback Equalizer (DFE) with programmable taps includes a summer configured to receive a DFE input signal. Delay elements are coupled to the summer. The delay elements are connected in series. Each delay element provides a respective delayed signal of an input signal to the delay element. A weight generator is configured to provide tap weights. The DFE is configured to multiply each tap weight to the respective delayed signal from the respective delay element to provide tap outputs. Each tap output is selectively enabled to be added to the summer or disabled based on a first comparison of a first threshold value and each impulse response or each tap weight corresponding to the respective tap output, where the impulse response is the DFE input signal in response to a pulse signal transmitted through a channel.Type: ApplicationFiled: November 10, 2011Publication date: May 16, 2013Inventors: Ming-Chieh HUANG, Jing Jing CHEN, Chan-Hong CHERN, Tao Wen CHUNG, Chih-Chang LIN, Yuwen SWEI
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Patent number: 8432204Abstract: A PLL circuit includes a phase frequency detector; a programmable charge pump coupled to an output of the phase frequency detector; a loop filter coupled to an output of the charge pump, the loop filter providing a fine tuning voltage; a first voltage-to-current converter, the first voltage-to-current converter providing a fine tuning current corresponding to the fine tuning voltage; a current-controlled oscillator (CCO); a feedback divider coupled to an output of the CCO and an input of the phase frequency detector; and an analog calibration circuit. The analog calibration circuit provides a coarse adjustment current for coarse adjustments to a frequency pivot point for an oscillator frequency of the CCO, wherein the CCO generates a frequency signal at an output responsive to a summed coarse adjustment and fine tuning current, wherein the frequency pivot point is continuously adjustable.Type: GrantFiled: January 6, 2012Date of Patent: April 30, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chan-Hong Chern, Ming-Chieh Huang, Tao Wen Chung, Chih-Chang Lin, Yuwen Swei, Fu-Lung Hsueh
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Publication number: 20130099767Abstract: A driver includes a first driver stage having at least one input node and at least one first output node. The first driver stage includes a T-coil structure that is disposed adjacent to the at least one first output node. The T-coil structure includes a first set of inductors each being operable to provide a first inductance. A second set of inductors are electrically coupled with the first set of inductors in a parallel fashion. The second set of inductors each are operable to provide a second inductance. A second driver stage is electrically coupled with the first driver stage.Type: ApplicationFiled: October 21, 2011Publication date: April 25, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Chieh HUANG, Tao Wen CHUNG, Chan-Hong CHERN, Chih-Chang LIN, Yuwen SWEI, Chiang PU
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Patent number: 8415764Abstract: An integrated circuit device includes a semiconductor substrate having a top surface; at least one insulation region extending from the top surface into the semiconductor substrate; a plurality of base contacts of a first conductivity type electrically interconnected to each other; and a plurality of emitters and a plurality of collectors of a second conductivity type opposite the first conductivity type. Each of the plurality of emitters, the plurality of collectors, and the plurality of base contacts is laterally spaced apart from each other by the at least one insulation region. The integrated circuit device further includes a buried layer of the second conductivity type in the semiconductor substrate, wherein the buried layer has an upper surface adjoining bottom surfaces of the plurality of collectors.Type: GrantFiled: March 30, 2010Date of Patent: April 9, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tao-Wen Chung, Po-Yao Ke, Wei-Yang Lin, Shine Chung
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Publication number: 20130082754Abstract: An inductor-capacitor phase locked loop (LCPLL) includes an inductor-capacitor voltage controlled oscillator (LCVCO) that provides an output frequency. A calibration circuit includes two comparators and provides a coarse tune signal to the LCVCO. The two comparators respectively compare the loop filter signal with a first reference voltage and a second reference voltage that is higher than the first reference voltage to supply a first and second comparator output, respectively. The calibration circuit is capable of adjusting the coarse tune signal continuously in voltage values and adjusts the coarse tune signal based on the two comparator outputs. A loop filter provides a loop filter signal to the calibration circuit and a fine tune signal to the LCVCO. A coarse tune frequency range is greater than a fine tune frequency range.Type: ApplicationFiled: October 4, 2011Publication date: April 4, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chan-Hong CHERN, Ming-Chieh HUANG, Tao Wen CHUNG, Chih-Chang LIN, Fu-Lung HSUEH, Yuwen SWEI
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Patent number: 8368437Abstract: A phase locked loop (PLL) includes a voltage controlled oscillator (VCO) configured to supply an output signal. A phase frequency detector (PFD) is configured to receive a reference frequency signal and to provide a first control signal. A first charge pump is configured to receive the first control signal and to provide a first voltage signal in order to control the VCO. A second charge pump is configured to receive the first control signal and to provide a second voltage signal. A comparator is configured to receive a reference voltage signal, to compare the reference voltage signal and the second voltage signal, and to provide a second control signal. The PFD is configured to adjust at least one side slope of the first control signal based on the second control signal.Type: GrantFiled: March 2, 2011Date of Patent: February 5, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Chieh Huang, Chih-Chang Lin, Tao Wen Chung, Chan-Hong Chern
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Publication number: 20120281464Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.Type: ApplicationFiled: July 16, 2012Publication date: November 8, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shine Chung, Tao-Wen Chung, Chun-Jung Lin, Yu-Jen Wang, Hung-Sen Wang
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Patent number: 8305790Abstract: A first terminal and a second terminal of a FinFET transistor are used as two terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is controlled, and a voltage having a predetermined amplitude and a predetermined duration is applied to the first terminal to cause the first terminal to be electrically shorted to the second terminal.Type: GrantFiled: March 16, 2010Date of Patent: November 6, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tao-Wen Chung, Po-Yao Ke, Shine Chung, Fu-Lung Hsueh
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Publication number: 20120264269Abstract: A method of forming a semiconductor device is provided. The method includes forming a first fin above a substrate, forming a first emitter region in a first portion of the first fin, forming a first collector region in a second portion of the first fin, and forming a first base region in a third portion of the first fin. The third portion of the first fin is disposed underneath a first gate electrode. The method further includes forming a second fin adjacent to the first fin and above the substrate. The second fin is composed of a semiconductor material. The method also includes forming a first base contact over the second fin. The first base contact is coupled to the first base region through the second fin, the substrate, and the first fin.Type: ApplicationFiled: June 27, 2012Publication date: October 18, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Yao Ke, Tao-Wen Chung, Shine Chung, Fu-Lung Hsueh
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Publication number: 20120262212Abstract: A multiple-phase clock generator includes at least one stage of dividers. A clock signal is supplied as a first stage clock input to dividers in a first stage of dividers. An N-th stage includes 2N dividers, where N is a positive integer number. Each divider in the first stage is configured to divide a first clock frequency of the first stage clock input by 2 to provide a first stage output. Each divider in the N-th stage is configured to divide an N-th clock frequency of an N-th stage clock input by 2 to provide an N-th stage output. The N-th stage outputs from the dividers in the N-th stage provide 2N-phase clock signals that are equally distributed with a same phase difference between adjacent phase clock signals.Type: ApplicationFiled: April 12, 2011Publication date: October 18, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Chang LIN, Chan-Hong CHERN, Ming-Chieh HUANG, Tao Wen CHUNG
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Patent number: 8279102Abstract: An analog to digital converter (ADC) comprises an input node having a variable analog input voltage, first and second switched capacitor circuits, an operational amplifier, and a control circuit. The first switched capacitor circuit has first and second capacitors and is coupled to the input node, and the second switched capacitor circuit has third and fourth capacitors and is coupled to the input node. The operational amplifier is configured to be conditionally coupled to only one of the first and second switched capacitor circuits at a time and configured to conditionally provide feedback to the switched capacitor circuits via an output node. The control circuit is coupled to the first and second switched capacitor circuits for conditional coupling to the operational amplifier.Type: GrantFiled: October 5, 2010Date of Patent: October 2, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fang-Shi Jordan Lai, Hsu-Feng Hsueh, Cheng Yen Weng, Yung-Fu Lin, Manoj M. Mhala, Tao Wen Chung, Chin-Hao Chang
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Patent number: 8270207Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.Type: GrantFiled: January 14, 2010Date of Patent: September 18, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shine Chung, Tao-Wen Chung, Chun-Jung Lin, Yu-Jen Wang
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Publication number: 20120223752Abstract: A phase locked loop (PLL) includes a voltage controlled oscillator (VCO) configured to supply an output signal. A phase frequency detector (PFD) is configured to receive a reference frequency signal and to provide a first control signal. A first charge pump is configured to receive the first control signal and to provide a first voltage signal in order to control the VCO. A second charge pump is configured to receive the first control signal and to provide a second voltage signal. A comparator is configured to receive a reference voltage signal, to compare the reference voltage signal and the second voltage signal, and to provide a second control signal. The PFD is configured to adjust at least one side slope of the first control signal based on the second control signal.Type: ApplicationFiled: March 2, 2011Publication date: September 6, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Chieh HUANG, Chih-Chang LIN, Tao Wen CHUNG, Chan-Hong CHERN
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Patent number: 8258602Abstract: Design and methods for fabricating bipolar junction transistors are described. In one embodiment, a semiconductor device includes a first fin comprising a first emitter region, a first base region, and a first collector region. The first emitter region, the first base region, and the first collector region form a bipolar junction transistor. A second fin is disposed adjacent and parallel to the first fin. The second fin includes a first contact to the first base region.Type: GrantFiled: November 13, 2009Date of Patent: September 4, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Yao Ke, Tao-Wen Chung, Shine Chung, Fu-Lung Hsueh