Abstract: In a method of converting an analog signal to digital format, an analog input signal is received and processed using sigma-delta modulation to provide a first digital signal that represents the analog input signal in digital format and to provide a second digital signal that represents a first error introduced during the sigma-delta modulation. A second error that is error introduced during the sigma-delta modulation is estimated. A pre-correction signal is determined based on the first and second digital signals. A difference between the estimated second error and the pre-correction digital signal is determined to provide a digital output signal representing the analog input signal in digital format. An error correction element operable to adjust the digital output signal based on the analog input signal, the digital output signal, and the second digital signal is controlled.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract: A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

Abstract: An analog to digital converter (ADC) comprises an input node having a variable analog input voltage, first and second switched capacitor circuits, an operational amplifier, and a control circuit. The first switched capacitor circuit has first and second capacitors and is coupled to the input node, and the second switched capacitor circuit has third and fourth capacitors and is coupled to the input node. The operational amplifier is configured to be conditionally coupled to only one of the first and second switched capacitor circuits at a time and configured to conditionally provide feedback to the switched capacitor circuits via an output node. The control circuit is coupled to the first and second switched capacitor circuits for conditional coupling to the operational amplifier.

Abstract: In a method of converting an analog signal to digital format, an analog input signal is received and processed using sigma-delta modulation to provide a first digital signal that represents the analog input signal in digital format and to provide a second digital signal that represents a first error introduced during the sigma-delta modulation. A second error that is error introduced during the sigma-delta modulation is estimated. A pre-correction signal is determined based on the first and second digital signals. A difference between the estimated second error and the pre-correction digital signal is determined to provide a digital output signal representing the analog input signal in digital format. An error correction element operable to adjust the digital output signal based on the analog input signal, the digital output signal, and the second digital signal is controlled.

Abstract: A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.

Abstract: An integrated circuit structure includes an image sensor cell, which further includes a photo transistor configured to sense light and to generate a current from the light.

Abstract: An integrated circuit device includes a semiconductor substrate having a top surface; at least one insulation region extending from the top surface into the semiconductor substrate; a plurality of base contacts of a first conductivity type electrically interconnected to each other; and a plurality of emitters and a plurality of collectors of a second conductivity type opposite the first conductivity type. Each of the plurality of emitters, the plurality of collectors, and the plurality of base contacts is laterally spaced apart from each other by the at least one insulation region. The integrated circuit device further includes a buried layer of the second conductivity type in the semiconductor substrate, wherein the buried layer has an upper surface adjoining bottom surfaces of the plurality of collectors.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract: In various embodiments, the fuse is formed from silicide and on top of a fin of a fin structure. Because the fuse is formed on top of a fin, its width takes the width of the fin, which is very thin. Depending on implementations, the fuse is also formed using planar technology and includes a thin width. Because the width of the fuse is relatively thin, a predetermined current can reliably cause the fuse to be opened. Further, the fuse can be used with a transistor to form a memory cell used in memory arrays, and the transistor utilizes FinFET technology.

Abstract: A first terminal and a second terminal of a FinFET transistor are used as two terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is controlled, and a voltage having a predetermined amplitude and a predetermined duration is applied to the first terminal to cause the first terminal to be electrically shorted to the second terminal.

Abstract: A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.

Abstract: Design and methods for fabricating bipolar junction transistors are described. In one embodiment, a semiconductor device includes a first fin comprising a first emitter region, a first base region, and a first collector region. The first emitter region, the first base region, and the first collector region form a bipolar junction transistor. A second fin is disposed adjacent and parallel to the first fin. The second fin includes a first contact to the first base region.