Abstract: A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

Abstract: A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

Abstract: A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

Abstract: A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer.

Abstract: A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.

Abstract: A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a spacing material layer on the flexible substrate; patterning the spacing material layer to form a patterned spacing layer; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Abstract: A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a patterned spacing layer on the flexible substrate with a spacing material deposition source and a mask; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: Alignment precision enhancement of electronic component process on flexible substrate device and method thereof the same is proposed. The process step of a flexible substrate is put on a substrate holder, wherein the flexible substrate is fixed by a polymer tape. A plural of alignment marks is making for lithography process. An unstressed cut is separated the flexible substrate and substrate holder when the electronic component is made.

Abstract: Alignment precision enhancement of electronic component process on flexible substrate device and method thereof the same is proposed. The process step of a flexible substrate is put on a substrate holder, wherein the flexible substrate is fixed by a polymer tape. A plural of alignment marks is making for lithography process. An unstressed cut is separated the flexible substrate and substrate holder when the electronic component is made.

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.

Abstract: A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: An organic semiconductor device is provided. A conductive gate layer and a gate dielectric layer are formed on a substrate. Patterned metal layers are formed on the gate dielectric layer beside the conductive gate layer. An electrode modified layer is formed on a top surface and sidewall of each of the patterned metal layer. The patterned metal layers and the electrode modified layers formed thereon serve a source and a drain. An organic semiconductor layer is formed on the source and the drain.

Abstract: A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.