Abstract: A semiconductor device includes a thyristor configured to be formed through sequential joining of a first region of a first conductivity type, a second region of a second conductivity type opposite to the first conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type, and have a gate formed over the third region. The first to fourth regions are formed in a silicon germanium region or germanium region.

Abstract: A semiconductor device includes a bulk semiconductor substrate, a plurality of storage elements, a bit line, a first voltage being applied to the first region side of the thyristor, and a voltage lower than the first voltage being applied to a word line. The plurality of storage elements formed on the bulk semiconductor substrate and each including a thyristor formed on the bulk semiconductor substrate and including a first region of a first conductor type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type and a fourth region of the second conduction type jointed together in order, a gate electrode formed on the third region, and a field effect transistor formed on the semiconductor substrate on which the thyristor is formed and connected to the fourth region of the thyristor.

Abstract: A semiconductor device includes: a bulk semiconductor substrate; a thyristor formed in the bulk semiconductor substrate; a gate electrode formed at the third region; and a well region. The thyristor included a first region of a first conduction type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type, and a fourth region of the second conduction type, junctioned in order. The well region of the second conduction type is formed in the bulk semiconductor substrate, the third region is formed in the well region. A first voltage is impressed on the first region side of the thyristor, a second voltage higher than the first voltage is impressed on the fourth region side of the thyristor, and a voltage higher than or equal to the first voltage is impressed on the well region.

Abstract: The semiconductor memory device according to the present invention includes a charge storage layer 26 formed over a semiconductor substrate 10 and including a plurality of particles 16 as charge storage bodies in insulating films 12, 24, and a gate electrode 30 formed over the charge storage layer 26, in which the particles 16 are formed of metal oxide or metal nitride.

Abstract: A semiconductor device has a thyristor including a first region of a first conduction type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type, and a fourth region of the second conduction type, in sequential junction, and has a gate electrode at the third region, wherein the second region is formed in a semiconductor substrate, and the first region is formed over the second region. A part of the region of a thyristor is thus provided with a laminate structure, whereby a reduction in element area can be achieved, and an enhanced punch-through resistance can be attained.

Abstract: The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to each other in that order; first and second electrodes that are connected to the first-conductivity-type region and the second-conductivity-type region, respectively, at both ends of the semiconductor layer; and a gate electrode that is coupled to the second-conductivity-type region or the first-conductivity-type region in an intermediate area of the semiconductor layer, the gate electrode being provided over a plurality of faces of a semiconductor layer portion serving as the second-conductivity-type region or the first-conductivity-type region in the intermediate area.

Abstract: A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Abstract: A non-volatile semiconductor memory device comprise a source region 44 and a drain region 46 formed in a semiconductor substrate 30; a gate electrode 36 formed on the semiconductor substrate between the source region and the drain region with a first insulation film 32 formed between the gate electrode and the semiconductor substrate; and a charge accumulation region 42a, 42b of a dielectric material, which is formed on at least either of the side wall of the gate electrode on the side of the source region and the side wall of the gate electrode on the side of the drain region. Accordingly, charges accumulated on the side of the source region 44 and the charges accumulated on the side of the drain region 46 can be easily spatially isolated from each other.

Abstract: A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region 14 of a silicon substrate 10; and wet oxidizing the silicon substrate 10 in an ambient atmosphere which an H2O partial pressure is less than 1 atm to thereby form a silicon oxide film 22 in the device region 14 of the silicon substrate 10, and a silicon oxide film 24 thinner than the silicon oxide film 22 in a device region 16 of the silicon substrate 10. Whereby the silicon oxide film in a device region 14 with the halogen element or argon introduced can be selectively formed thick. The silicon oxide films are formed by the wet oxidation, whereby the gate insulation films can be more reliable than those formed by the dry oxidation.

Abstract: A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Abstract: A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Abstract: A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region 14 of a silicon substrate 10; and wet oxidizing the silicon substrate 10 in an ambient atmosphere which an H2O partial pressure is less than 1 atm to thereby form a silicon oxide film 22 in the device region 14 of the silicon substrate 10, and a silicon oxide film 24 thinner than the silicon oxide film 22 in a device region 16 of the silicon substrate 10. Whereby the silicon oxide film in a device region 14 with the halogen element or argon introduced can be selectively formed thick. The silicon oxide films are formed by the wet oxidation, whereby the gate insulation films can be more reliable than those formed by the dry oxidation.