Abstract: This disclosure provides a semiconductor device which includes a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane, a first electrode provided above the surface and having a first end, and a second electrode provided above the surface to space apart from the first electrode, having a second end facing the first end, and a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end is different from a c-axis direction of the GaN-based semiconductor layer.

Abstract: In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.

Abstract: According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode.

Abstract: A sound making movable toy which is provided with a sound making device and driving wheels driven by a driving power source, the sound making device comprising: a blowing chamber having a fan and a sounding aperture; a main resonance chamber communicating with the sounding aperture; a resonance control chamber communicating with the main resonance chamber; a piston reciprocating within the resonance control chamber; and a crank mechanism to move the piston; thereby the sounds of various pitches being produced by changing the resonant volume of a resonance space defined by the main resonance chamber and the resonance control chamber with the reciprocating motion of the piston.