Abstract: A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that includes (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1} <3 4 6> is within 30° is 60% or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1}<3 4 6> is within 30° is 60 % or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: Provided is a clathrate compound represented by a following chemical formula, for example, BaaGabAlcSid (where 7.77?a?8.16, 7.47?b?15.21, 0.28?c?6.92, 30.35?d?32.80, and a+b+c+d=54), and a thermoelectric material containing the clathrate compound. A producing method of the thermoelectric material is also provided.

Abstract: A copper alloy sheet material, having an R value of 1 or greater, which is defined by: R=([BR]+[RDW]+[W])/([C]+[S]+[B]) wherein [BR], [RDW], [W], [C], [S], and [B] represent an area ratio of crystal texture orientation component of BR orientation {3 6 2}<8 5 3>, RD-rotated-cube orientation {0 1 2}<1 0 0>, cube orientation {1 0 0}<0 0 1>, copper orientation {1 2 1}<1 1 1>, S-orientation {2 3 1}<3 4 6>, and brass orientation {1 1 0}<1 1 2>, respectively, in crystal orientation analysis in an EBSD (electron back scatter diffraction) analysis, and having a proof stress of 500 MPa or greater, and an electrical conductivity of 30%IACS or higher; and a production method of the same.

Abstract: A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.

Abstract: {Problems} To provide a copper alloy material, having a low Young's modulus that is required of electrical or electronic parts, such as connectors. {Means to solve} A copper alloy sheet material for electrical or electronic parts, having an alloy composition containing any one or both of Ni and Co in an amount of 0.5 to 5.0 mass % in total, and Si in an amount of 0.2 to 1.5 mass %, with the balance being Cu and inevitable impurities, wherein the copper alloy sheet material has a 0.2% proof stress in the rolling direction of 500 MPa or more, an electrical conductivity of 30% IACS or more, a Young's modulus of 110 GPa or less, and a factor of bending deflection of 105 GPa or less.

Abstract: A copper alloy material, containing Ni 1.8 to 5.0 mass % and Si 0.3 to 1.7 mass %, at a ratio of contents of Ni and Si, Ni/Si, of 3.0 to 6.0, and having a content of S of less than 0.005 mass %, with the balance of being Cu and inevitable impurities, wherein the copper alloy material satisfies formulae (1) to (4): 130×C+300?TS?130×C+650??(1) 0.001?d?0.020??(2) W?150??(3) 10?L?800??(4) wherein TS represents a tensile strength (MPa) of the copper alloy material in a direction parallel to rolling; C represents the content (mass %) of Ni in the copper alloy material; d represents an average grain diameter (mm) of the copper alloy material; W represents a width (nm) of a precipitate free zone; and L represents a particle diameter (nm) of a compound on a grain boundary.

Abstract: A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 ?m; and an electrical conductivity is 50% IACS or more.

Abstract: A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 ?m.

Abstract: A copper alloy material, having an alloy composition containing any one or both of Ni and Co in an amount of 0.4 to 5.0 mass % in total, and Si in an amount of 0.1 to 1.5 mass %, with the balance being copper and unavoidable impurities, wherein a ratio of an area of grains in which an angle of orientation deviated from S-orientation {2 3 1}<3 4 6> is within 30° is 60% or more, according to a crystal orientation analysis in EBSD measurement; an electrical or electronic part formed by working the copper alloy material; and a method of producing the copper alloy material.

Abstract: A method of producing a copper alloy containing: Ni and/or Si and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, the copper alloy having a precipitate X composed of Ni and Si, and a precipitate Y composed of Ni and/or Si, and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, in which a grain diameter of the precipitate Y is 0.01 to 2 ?m.

Abstract: A copper alloy material for an electric/electronic part, having a composition comprising Co 0.5 to 2.0 mass % and Si 0.1 to 0.5 mass %, with the balance of Cu and inevitable impurities, in which a copper alloy of a matrix has a grain size of 3 to 35 ?m, a precipitate composed of Co and Si has a particle size of 5 to 50 nm, the precipitate has a density of 1×108 to 1×1010 number/mm2, and the copper alloy material has a tensile strength of 550 MPa and an electrical conductivity of 50% IACS or more.

Abstract: A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C comprising Ni and Si in a total amount of 50 mass % or more are contained. The intermetallic compound A has a compound diameter of 0.3 ?m to 2 ?m, the intermetallic compound B has a compound diameter of 0.05 ?m to less than 0.3 ?m, and the intermetallic compound C has a compound diameter of more than 0.001 ?m to less than 0.05 ?m.

Abstract: A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that comprises (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.

Abstract: A copper alloy sheet material which has a tensile strength of 730-820 MPa and contains at least nickel (Ni) and silicon (Si), with the remainder being copper (Cu) and inevitable impurities. When the sheet material has a shape capable of 180° tight bending and the width and thickness of this sheet material are expressed by W (unit: mm) and T (unit: mm) respectively, then the product of W and T is 0.16 or less. Preferably, the sheet material is constituted of an alloy containing nickel at 1.8-3.3 mass %, silicon at 0.4 mass %, and chromium (Cr) at 0.01-0.5 mass %, with the remainder being copper and inevitable impurities. The sheet material may further contain one or more of: at least one member selected among tin (Sn), magnesium (Mg), silver (Ag), manganese (Mn), titanium (Ti), iron (Fe), and phosphorus (P) in a total amount of 0.01-1 mass %; zinc (Zn) at 0.01-10 mass %, cobalt (Co) at and 0.01-1.5 mass %.

Abstract: A copper alloy material for an electric/electronic part, containing Co 0.5 to 2.5 mass % and Si 0.1 to 1.0 mass %, at a ratio of Co/Si of 3 to 5 in terms of mass ratio, with the balance of Cu and inevitable impurities, which is obtained by subjecting to a solution treatment at a temperature (° C.) from 800° C. to 960° C. and lower than ?122.77X2+409.99X+615.74, in which X represents the Co content in mass %.

Abstract: An copper alloy material for electric/electronic components containing Co by 0.2 to 2 mass % and Si by 0.05 to 0.5 mass % and having a remaining component composed of Cu and unavoidable impurities, characterized in that its grain size is 3 to 35 ?m and size of precipitate containing the both of Co and Si is 5 to 50 nm, electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.

Abstract: A copper alloy material, containing Ni 1.8 to 5.0 mass % and Si 0.3 to 1.7 mass %, at a ratio of contents of Ni and Si, Ni/Si, of 3.0 to 6.0, and having a content of S of less than 0.005 mass %, with the balance of being Cu and inevitable impurities, wherein the copper alloy material satisfies formulae (1) to (4): 130×C+300?TS?130×C+650??(1) 0.001?d?0.020??(2) W?150??(3) 10?L?800??(4) wherein TS represents a tensile strength (MPa) of the copper alloy material in a direction parallel to rolling; C represents the content (mass %) of Ni in the copper alloy material; d represents an average grain diameter (mm) of the copper alloy material; W represents a width (nm) of a precipitate free zone; and L represents a particle diameter (nm) of a compound on a grain boundary.

Abstract: A copper alloy material according to the present invention is characterized in that the same comprises: Ni between 2.8 mass % and 5.0 mass %; Si between 0.4 mass % and 1.7 mass %; S of which content is limited to less than 0.005 mass %; and the balance of the copper alloy material is composed of copper and unavoidable impurity, wherein a proof stress is stronger than or equal to 800 MPa, and the same is superior in bending workability and in stress relaxation resistance.