Abstract: Disclosed is a flatted material produced by conducting cold flatting of copper alloy including 0.1-1.0 mass % of Cu, 0.05-1.5 mass % of Sn, and 0.05-1.5 mass % of Zn, and comprising residue Cu and unavoidable impurities. In the flatted material, both of the stress relaxation rates in a direction parallel to the flatting direction and a direction perpendicular to the flatting direction are 50% or less as measured by an insertion type stress relaxation test at 150° C. after 1,000 hours.

Abstract: A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass % and 5.0 mass %; silicon (Si) between 0.4 mass % and 1.5 mass %; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 ?m and not larger than 20 ?m, and a standard deviation of the crystalline grain diameter is not larger than 10 ?m.

Abstract: A copper alloy material according to the present invention is characterized in that the copper alloy material includes: an element X between 0.1% and 4% by mass, in which the element X represents one transition element or not less than two elements selected from Ni, Fe, Co and Cr; an element Y between 0.01% and 3% by mass, in which the element Y represents one element or not less than two elements selected from Ti, Si, Zr and Hf; and a remaining portion to be comprised of copper and an unavoidable impurity, wherein the copper alloy material has an electrical conductivity of not less than 50% IACS, an yield strength of not less than 600 MPa, and a stress relaxation rate of not higher than 20% as to be measured after the same is maintained for 1000 hours at a state under applying a stress of 80% of the yield strength.

Abstract: A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C comprising Ni and Si in a total amount of 50 mass % or more are contained. The intermetallic compound A has a compound diameter of 0.3 ?m to 2 ?m, the intermetallic compound B has a compound diameter of 0.05 ?m to less than 0.3 ?m, and the intermetallic compound C has a compound diameter of more than 0.001 ?m to less than 0.05 ?m.

Abstract: A copper-based deposited alloy strip for a contact material has a maximum value of a difference not larger than 100 MPa among three of tensile strengths, that are a tensile strength in a rolling direction thereof, a tensile strength in a direction crossing the rolling direction with an angle of 45 degrees, and a tensile strength in a direction crossing the rolling direction with an angle of 90 degrees. A process for producing the copper-based deposited alloy strip for a contact material includes the steps of: performing a solution heated treatment on a copper alloy strip; and performing an aging heat treatment on the copper alloy strip.

Abstract: A conductor of an electric cable for wiring, containing a copper alloy material containing 1.0 to 4.5 mass % of Ni, 0.2 to 1.1 mass % of Si, and the balance of Cu and unavoidable impurities, in which the copper alloy material has an average grain diameter of 0.2 to 5.0 ?m.

Abstract: A conductor of an electric cable for wiring, containing a copper alloy material containing 1.0 to 4.5 mass % of Ni, 0.2 to 1.1 mass % of Si, and the balance of Cu and unavoidable impurities, in which the copper alloy material has an average grain diameter of 0.2 to 5.0 ?m.

Abstract: A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.

Abstract: A copper alloy for an electric connecting device, having Cr in the range from 0.1 to 1 mass %, Zn in the range from 0.1 to 5.0 mass %, and Sn in the range from 0.1 to 2.0 mass %, with the balance being inevitable impurities and Cu, wherein the copper alloy has tensile strength of 600 MPa or more, 0.2% yield strength of 560 MPa or more, electric conductivity of 40% IACS or more, and rupture time of 500 hours or more in a stress corrosion test under a load of 80% of the 0.2% yield strength.

Abstract: A metal material for a wiring connector in wiring connection between metallic members, wherein at least one of the metallic members is comprised of copper or a copper alloy, wherein a connecting portion surface of at least one of the metallic members has an average roughness Ra of 0.3 ?m or less and a maximum roughness Rt of 2.0 ?m or less, and wherein the metal material is excellent in glow resistance.

Abstract: A copper alloy, containing: Ni and/or Si, and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, with a balance being Cu and inevitable impurities; the copper alloy having a precipitate X composed of Ni and Si; and a precipitate Y composed of Ni and/or Si, and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, in which a grain diameter of the precipitate Y is 0.01 to 2 ?m.

Abstract: A copper alloy, having Sn 3.0 to 13.0 mass %, with the balance being Cu and unavoidable impurities, which copper alloy contains crystal grains whose diameter is 1.0 to 2.0 ?m, and wherein the copper alloy has a precipitate X having a diameter of 1 to 50 nm and a density of 106 to 1010 per mm2, and a precipitate Y having a diameter of 50 to 500 nm and a density of 104 to 108 per mm2; and a method of producing the copper alloy, including the steps of: cold-working the recrystallized structure with an average crystal grain diameter of 1 to 15 ?m at a working ratio of 40 to 70%; and heating the resultant to obtain a recrystallized structure with a crystal grain diameter of 1 to 2 ?m.

Abstract: A copper alloy for electric and electronic instruments, containing Ni of 1 to 3 mass %, Ti of 0.2 to 1.2 mass %, any one or both of Mg and Zr of 0.02 to 0.2 mass %, and Zn of 0.1 to 1 mass %, with the balance being Cu and unavoidable impurities, in which the copper alloy contains at least one of an intermetallic compound comprising Ni, Ti and Mg, an intermetallic compound comprising Ni, Ti and Zr, or an intermetallic compound comprising Ni, Ti, Mg and Zr, and the copper alloy has a stress relaxation rate of 20% or less after holding the alloy at 150° C. for 1,000 hours; and a method of producing the copper alloy for electric and electronic instruments.

Abstract: A copper alloy for electronic machinery and tools, containing Ni 2.0 to 4.5 mass %, and Si 0.3 to 1.0 mass %, with the balance being Cu and unavoidable impurities, which satisfies the following expression: I{311}×A/(I{311}+I{220}+I{200})<1.5 wherein I{311} represents an X-ray diffraction intensity from a {311} plane at a sheet surface; I{220} represents an X-ray diffraction intensity from a {220} plane at the sheet surface; I{200} represents an X-ray diffraction intensity from a {200} plane at the sheet surface; and A (?m) represents a crystalline grain size, and which has good bending property.

Abstract: A copper alloy, which contains: a precipitate X composed of Ni and Si; and a precipitate Y that comprises Ni or Si or neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.