Patents by Inventor Tatsumi Mizutani
Tatsumi Mizutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7259104Abstract: A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.Type: GrantFiled: September 29, 2003Date of Patent: August 21, 2007Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Takafumi Tokunaga, Tadashi Umezawa, Motohiko Yoshigai, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takashi Sato, Yasushi Goto
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Patent number: 7049243Abstract: A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.Type: GrantFiled: January 12, 2004Date of Patent: May 23, 2006Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Patent number: 6849191Abstract: According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 ?m or smaller is performed on the sample placed on the stage.Type: GrantFiled: February 12, 1999Date of Patent: February 1, 2005Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Tatsumi Mizutani, Ryouji Hamasaki, Tokuo Kure, Takafumi Tokunaga, Masayuki Kojima
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Publication number: 20040259361Abstract: A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.Type: ApplicationFiled: January 12, 2004Publication date: December 23, 2004Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Patent number: 6767838Abstract: A method and apparatus of treating a surface of a sample. A sample is arranged on a stage provided in a chamber, an etching gas is continuously supplied into the chamber and a plasma is generated from the etching gas. An rf bias at a frequency of 100 kHz or higher is applied to the stage independently of the generation of the plasma, and the rf bias is modulated at a frequency of 100 Hz to 10 kHz. Thereby, a surface treatment in which a minimum feature size is 1 &mgr;m or smaller is performed on the sample.Type: GrantFiled: October 19, 2000Date of Patent: July 27, 2004Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Tatsumi Mizutani, Ryouji Hamasaki, Tokuo Kure, Takafumi Tokunaga, Masayuki Kojima
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Publication number: 20040058541Abstract: To meet the requirements for ever smaller semiconductor devices, it is required to provide a sample surface processing method which is capable of processing a device of 1 micron or less, or more preferably 0.5 micron or less. It is also required to provide a surface processing method which allows a flat surface to be etched without irregularities occurring on the etched surface, and permits the multilayer film to be etched without underlying oxide film etched through.Type: ApplicationFiled: September 29, 2003Publication date: March 25, 2004Inventors: Tetsuo Ono, Takafuml Tokunaga, Tadashi Umezawa, Motohiko Yoshigai, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takashi Sato, Yasushi Goto
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Patent number: 6677244Abstract: A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.Type: GrantFiled: May 1, 2002Date of Patent: January 13, 2004Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Patent number: 6660647Abstract: A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.Type: GrantFiled: January 11, 2001Date of Patent: December 9, 2003Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Takafumi Tokunaga, Tadashi Umezawa, Motohiko Yoshigai, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takashi Sato, Yasushi Goto
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Publication number: 20030132198Abstract: According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, comprising: a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supplying means for continuously supplying an etching gas for plasma generation into the chamber; plasma generating means for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and pulse modulating means for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 &mgr;m or smaller is performed to the sample placed on the stand.Type: ApplicationFiled: February 12, 1999Publication date: July 17, 2003Inventors: TETSUO ONO, TATSUMI MIZUTANI, RYOUJI KAMASAKI, TOKUO KURE, TAKAFUMI TOKUNAGA, MASAYUKI KOJIMA
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Patent number: 6492277Abstract: Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.Type: GrantFiled: September 10, 1999Date of Patent: December 10, 2002Assignee: Hitachi, Ltd.Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Publication number: 20020125207Abstract: A plasma processing method for etching a sample includes generating a plasma in a treatment chamber having a stage on which the sample is placed, wherein the plasma is generated by use of electromagnetic waves, applying an rf bias to the stage with a frequency which enables reduction of ions having an intermediate energy, and on-off modulating the rf bias so that reaction products are deposited on the sample during the off period of the rf bias.Type: ApplicationFiled: May 1, 2002Publication date: September 12, 2002Inventors: Tetsuo Ono, Tatsumi Mizutani, Ryouji Hamasaki, Tokuo Kure, Takafumi Tokunaga, Masayuki Kojima
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Publication number: 20020123229Abstract: A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.Type: ApplicationFiled: May 1, 2002Publication date: September 5, 2002Inventors: Tetsuo Ono, Yasuhiro Nishimori, Takashi Sato, Naoyuki Kofuji, Masaru Izawa, Yasushi Goto, Ken Yoshioka, Hideyuki Kazumi, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takafumi Tokunaga, Motohiko Yoshigai
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Patent number: 6332425Abstract: A pulse voltage of duty ratio 5% or below and repetition frequency 400 KHz or above is supplied in order to suppress the notch, charge build-up damage, subtrench and bowing due to the electron shading phenomenon. Thus, a cycle for accelerating electrons occurs in the substrate bias, so that the electron shading phenomenon does not occur.Type: GrantFiled: March 14, 2000Date of Patent: December 25, 2001Inventors: Naoyuki Kofuji, Shin Arai, Kazunori Tsujimoto, Tatsumi Mizutani, Keizo Suzuki, Kenichi Mizuishi
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Patent number: 6309980Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: May 4, 2000Date of Patent: October 30, 2001Assignee: Hitachi, Ltd.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka
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Patent number: 6231777Abstract: A pulse voltage of duty ratio 5% or below and repetition frequency 400 KHz or above is supplied in order to suppress the notch, charge build-up damage, subtrench and bowing due to the electron shading phenomenon. Thus, a cycle for accelerating electrons occurs in the substrate bias, so that the electron shading phenomenon does not occur.Type: GrantFiled: October 26, 1995Date of Patent: May 15, 2001Assignee: Hitachi, Ltd.Inventors: Naoyuki Kofuji, Shin Arai, Kazunori Tsujimoto, Tatsumi Mizutani, Keizo Suzuki, Kenichi Mizuishi
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Patent number: 6074958Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: June 23, 1999Date of Patent: June 13, 2000Assignee: Hitachi, Ltd.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka
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Patent number: 5962347Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: November 10, 1998Date of Patent: October 5, 1999Assignee: Hitachi, Ltd.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka
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Patent number: 5874013Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.Type: GrantFiled: May 15, 1997Date of Patent: February 23, 1999Assignee: Hitachi, Ltd.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka
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Patent number: 5554257Abstract: A molecular or atomic beam for cleaning or etching semiconductor substrates, or for forming a thin film on a semiconductor substrate is formed by generating a chemical reaction between at least two gases introduced into a reaction chamber. The products of the chemical reaction, and optionally additional atoms or molecules introduced into the reaction chamber, pass through an aperture to form a beam that is projected onto a sample supported in a sample chamber. The translation energy generated by the chemical reaction accelerates the atoms, molecules and/or particles to a high speed to enable cleaning, etching or depositing processes to be formed with the beam without damaging the surface of the substrate being treated.Type: GrantFiled: July 5, 1994Date of Patent: September 10, 1996Assignee: Hitachi, Ltd.Inventors: Kenetsu Yokogawa, Yoshimi Kawanami, Tatsumi Mizutani
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Patent number: RE39895Abstract: To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.Type: GrantFiled: March 8, 2002Date of Patent: October 23, 2007Assignee: Renesas Technology Corp.Inventors: Takafumi Tokunaga, Sadayuki Okudaira, Tatsumi Mizutani, Kazutami Tago, Hideyuki Kazumi, Ken Yoshioka