Abstract: A surface processing method capable of processing the surface of a work at a high processing rate without damaging the surface of the work uses, in combination, a fast processing technique using charged particles and a moderate processing technique using neutral particles that scarcely damage the surface of the work, and a surface processing apparatus suitable for carrying out the surface processing method. In carrying out a surface treatment process, the substrate is processed in a moderate surface processing mode using neutral particles while the substrate is exposed substantially to charged particles, and the substrate is processed in a fast surface processing mode using charged particles while the substrate is not exposed substantially to charged particles to achieve the surface treatment process at a high processing rate without damaging the surface of the substrate.

Abstract: To improve the characteristics of oxides and other insulators formed by conventional techniques, particularly to improve its density, relative dielectric constant, resistance to acid, resistance to reduction and other characteristics, and to provide solid state devices or socharacteristics, the surfaces of the silicon oxide insulator, or the like, is irradiated with electrically neutral particles.

Abstract: An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides forming a duplex tube, a discharge tube, a pair of solenoids arranged coaxially, a multiaperture electrode for extracting an ion beam, gas supply pipes, a set of charged particle retarding grids, a device for controlling temperature of a specimen and a vacuum unit are provided.

Abstract: A method of preventing damages of a semiconductor having an insulator film at its surface caused by holes induced in the insulator film and move to and are trapped at or near the interface between the insulator film and a substrate upon applying surface treatment for the surface of the semiconductor, as well as an apparatus suitable to practicing the method are disclosed. The surface treatment method comprises trapping to eliminate the holes in the insulator film by an electric field before the movement of the holes at or near the interface, neutralizing the induced holes by re-combination, or previously forming a hole trapping level in the insulator film thereby trapping the induced holes to the trapping level, etc.

Abstract: A method of semiconductor surface measurement for measuring electrical characteristics of a surface of a semiconductor body is disclosed, by which an electrode, whose surface, which is opposite to the surface of a semiconductor substrate, is flat and the gap between the electrode and the surface is smaller than 0.5 .mu.m.

Abstract: Disclosed are a surface treatment method and apparatus in which an active species beam that contains active species having translational energy in a range of 0.01-100 eV as at least a partial constituent thereof constructs at least a part of treatment means.

Abstract: This invention relates to a fine processing of aluminum and aluminum alloy layers, and to a method for dry etching by a plasma in a gas containing hydrogen and/or a gaseous hydrogen compound and further containing a gaseous chloride. The fine processing without suffering from the side-etching is feasible even in case using an inorganic material as a mask.

Abstract: A dry-etching method for working SiO.sub.2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si.sub.3 N.sub.4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N.sub.2, O.sub.2 or a mixed gas thereof into a reaction chamber from the outside; and effecting the plasma discharge in the reaction chamber so that a reactive gas is liberated from a high molecular resin material arranged in the reaction chamber and containing fluorine atoms. The dry-etching method requires and uses no expensive gas containing a fluorocarbon, but has sufficient etching rate and selectivity.

Abstract: A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.

Abstract: Disclosed is a method for preventing corrosion of Al and Al alloys processed by the dry-etching method, which comprises (i) the step of sputtering Al or Al alloy in an ammonia-containing atmosphere and (ii) the step of washing the sputtered Al or Al alloy with an alkaline aqueous solution and then with water after termination of the step (i).According to this method, corrosion of Al or Al alloy by halogen element-containing substances stuck to Al or Al alloy during the dry-etching treatment can be effectively prevented.

Abstract: Method and apparatus for monitoring a dry etching process using gas plasma, wherein a ratio of a spectrum intensity which varies depending on the process of the etching process to a spectrum intensity which is independent of the process of the etching process is determined and a resulting signal intensity is monitored. The completion of the etching process can be exactly determined irrespective of variation of the etching conditions.