Patents by Inventor Tatsunori Sakano
Tatsunori Sakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240297153Abstract: A semiconductor chip includes a semiconductor layer, a first electrode located between a first conductive member and the semiconductor layer, a first gate pad located between the first conductive member and the semiconductor layer, a second gate pad located between the first conductive member and the semiconductor layer, and a second electrode located between the semiconductor layer and a second conductive member. A plurality of terminals includes a first gate terminal electrically connected to the first gate pad via the interconnection member, a second gate terminal electrically connected to the second gate pad via the interconnection member, and a sense terminal electrically connected to the first conductive member via the interconnection member. The sense terminal is located between the first gate terminal and the second gate terminal in a plan view perpendicular to a first direction.Type: ApplicationFiled: August 25, 2023Publication date: September 5, 2024Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Satoshi YOSHIDA, Tatsunori SAKANO, Ryohei GEJO
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Publication number: 20240290781Abstract: A semiconductor device includes first and second electrodes, a first interconnect, a semiconductor layer, first and second control electrodes. The second electrode is disposed in an element region. The first interconnect is disposed in a first interconnect region. The semiconductor layer is provided between the first electrode and the second electrode and between the first electrode and the first interconnect. The semiconductor layer includes first to seventh semiconductor regions. The second semiconductor region is provided between the first electrode and the first semiconductor region. The first semiconductor region includes a first semiconductor portion disposed in the first interconnect region and a second semiconductor portion disposed in the element region. The seventh semiconductor region is disposed in the element region. The first control electrode is arranged with the first and second semiconductor regions.Type: ApplicationFiled: August 23, 2023Publication date: August 29, 2024Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Takahiro KATO, Tatsunori Sakano, Yusuke Kobayashi, Ryohei Gejo
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Patent number: 12057501Abstract: A semiconductor device of an embodiment includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench on a side of a first face; a first electrode on the side of the first face; a second electrode on the side of the second face; a first gate electrode in the first trench; a first field plate electrode electrically connected to the first electrode in the first trench, a second gate electrode in the second trench; and a second field plate electrode electrically connected to the first electrode in the second trench, a resistance between first electrode and second field plate is different from a resistance between first electrode and the first field plate electrode.Type: GrantFiled: March 7, 2022Date of Patent: August 6, 2024Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yusuke Kobayashi, Tomoaki Inokuchi, Hiro Gangi, Tatsunori Sakano, Yusuke Hayashi
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Publication number: 20240258411Abstract: A voltage of a third gate electrode of a first semiconductor device transitions from a first off-voltage that is not more than a threshold voltage to a second off-voltage lower than the first off-voltage during a period from when a pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor device is input to a drive device to when any one of a first gate electrode, a second gate electrode, and a third gate electrode of a second semiconductor device reaches an on-voltage.Type: ApplicationFiled: August 22, 2023Publication date: August 1, 2024Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Kento ADACHI, Tatsunori SAKANO
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Publication number: 20240195408Abstract: The semiconductor drive device includes a third turn-off gate resistor that is electrically connected to the third gate electrode of each of the first semiconductor device and the second semiconductor device, and that is inserted into a third turn-off interconnect configured to apply a potential for turning off the third gate electrode. And R CGsoff ? Vth ? 3 min ? ( C CGsgc ) ? dv dt ( 1 ) where, in each of the first semiconductor device and the second semiconductor device, a threshold voltage of the third gate electrode being Vth3, a resistance value of the third turn-off gate resistor being RCGsoff, a minimum value of a capacitance between the third gate electrode and the collector electrode in a voltage dependence characteristic being min (CCGsgc), and a time displacement of a voltage at a time of turning on being dv/dt.Type: ApplicationFiled: August 21, 2023Publication date: June 13, 2024Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Kento ADACHI, Tatsunori SAKANO
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Publication number: 20240079480Abstract: A semiconductor module according to an embodiment includes a first conductor, a second conductor, a third conductor, a fourth conductor, a plurality of conductive bonding materials, and a plurality of multi-gate semiconductor devices. The multi-gate semiconductor device includes a semiconductor layer, a collector electrode. The multi-gate semiconductor device includes an emitter electrode, a first gate electrode, and a second gate electrode bonded to the second to fourth conductors via conductive bonding materials.Type: ApplicationFiled: February 27, 2023Publication date: March 7, 2024Applicant: Kabushiki Kaisha ToshibaInventors: Kento ADACHI, Tatsunori SAKANO, Tomoaki INOKUCHI
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Patent number: 11923851Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.Type: GrantFiled: July 12, 2022Date of Patent: March 5, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Tatsunori Sakano, Ryohei Gejo, Tomoko Matsudai
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Publication number: 20240055386Abstract: According to one embodiment, a semiconductor package includes a first conductive member, a second conductive member, a plurality of semiconductor devices, a wiring member, a first connection member, and a second connection member. The plurality of semiconductor devices is provided between the first conductive member and the second conductive member. One of the semiconductor devices includes a semiconductor member, a first electrode, a first control electrode, a second control electrode, and a second electrode. The first and second conductive members are electrically connected to the first and second electrodes, respectively. The wiring member includes first, second and third wiring layers, and an insulating region. A part of the insulating region is located between the first wiring layer and the third wiring layer, and between the third wiring layer and the second wiring layer. The second wiring layer includes a first connection region and a second connection region.Type: ApplicationFiled: February 14, 2023Publication date: February 15, 2024Inventors: Satoshi YOSHIDA, Tatsunori SAKANO, Ryohei GEJO
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Publication number: 20240030344Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and a third conductive member wiring. The first conductive member includes a first conductive portion including a first face and a second conductive portion including a second face. The second conductive member includes a third conductive portion including a third face and a fourth conductive portion including a fourth face. The fourth conductive portion includes a facing conductive portion. The first semiconductor member is of a first conductive type. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The third partial region includes a facing face facing the facing conductive portion. The third conductive member wiring is electrically connected to the third conductive member.Type: ApplicationFiled: February 21, 2023Publication date: January 25, 2024Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Tomoaki INOKUCHI, Hiro GANGI, Yusuke KOBAYASHI, Tatsuya NISHIWAKI, Shotaro BABA, Hiroki NEMOTO, Tatsunori SAKANO
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Patent number: 11837654Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.Type: GrantFiled: December 20, 2022Date of Patent: December 5, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Ryohei Gejo, Tatsunori Sakano
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Patent number: 11784246Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and first and second insulating members. The semiconductor member is located between the second and first electrodes, and includes a first semiconductor region a second semiconductor region between the first semiconductor region and the first electrode, a third semiconductor region between the second semiconductor region and the first electrode, a fourth semiconductor region between the second semiconductor region and the first electrode, a fifth semiconductor region between the first semiconductor region and the second electrode, a sixth semiconductor region between the fifth semiconductor region and the second electrode, and a seventh semiconductor region between the fifth semiconductor region and the second electrode. A portion of the first insulating member is between the third electrode and the semiconductor member.Type: GrantFiled: August 25, 2021Date of Patent: October 10, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Ryohei Gejo, Tatsunori Sakano, Takahiro Kato
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Patent number: 11777025Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, first and second electrodes, a gate electrode, a gate terminal, a first conductive member, a first terminal, and a first insulating member. The semiconductor member includes first and second semiconductor regions, and a third semiconductor region provided between the first and second semiconductor regions. The first electrode is electrically connected to the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The gate terminal is electrically connected to the gate electrode. The first conductive member is electrically insulated from the first and second electrodes, and the gate electrode. The first terminal is electrically connected to the first conductive member.Type: GrantFiled: February 9, 2021Date of Patent: October 3, 2023Assignees: KABUSHIKA KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yusuke Kobayashi, Tatsunori Sakano, Hiro Gangi, Tomoaki Inokuchi, Takahiro Kato, Yusuke Hayashi, Ryohei Gejo, Tatsuya Nishiwaki
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Publication number: 20230253485Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to sixth semiconductor regions. The third semiconductor region includes first and second partial regions. A part of the fourth semiconductor region is between the second partial and second semiconductor regions. The fifth semiconductor region is between the second partial region and a part of the fourth semiconductor region. The sixth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The fourth electrode is between the first partial region and the third electrode. A part of the insulating member is provided between the semiconductor member and the third electrode, between the semiconductor member and the fourth electrode, and between the third and fourth electrodes.Type: ApplicationFiled: August 2, 2022Publication date: August 10, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Takahiro KATO, Tatsunori SAKANO, Yusuke KOBAYASHI, Ryohei GEJO
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Publication number: 20230238944Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.Type: ApplicationFiled: July 12, 2022Publication date: July 27, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Tatsunori SAKANO, Ryohei GEJO, Tomoko MATSUDAI
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Patent number: 11682719Abstract: According to one embodiment, a semiconductor device includes first, and second conductive members, a first electrode including first and second electrode regions, a second electrode electrically connected to a first semiconductor film portion, a first semiconductor region including first to fourth partial regions, a second semiconductor region including the first semiconductor film portion, a third semiconductor region including a first semiconductor layer portion, a fourth semiconductor region provided between the first electrode and the first semiconductor region, and a first insulating member including insulating portions. The first partial region is between the first electrode region and the first conductive member. The second partial region is between the second electrode region and the second conductive member. The third partial region is between the first and second partial regions and between the first electrode and the fourth partial region.Type: GrantFiled: January 22, 2021Date of Patent: June 20, 2023Assignee: Kabushiki Kaisha ToshibaInventors: Takahiro Kato, Tatsunori Sakano
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Publication number: 20230123438Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.Type: ApplicationFiled: December 20, 2022Publication date: April 20, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Ryohei GEJO, Tatsunori SAKANO
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Publication number: 20230078116Abstract: A semiconductor device of an embodiment includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench on a side of a first face; a first electrode on the side of the first face; a second electrode on the side of the second face; a first gate electrode in the first trench; a first field plate electrode electrically connected to the first electrode in the first trench, a second gate electrode in the second trench; and a second field plate electrode electrically connected to the first electrode in the second trench, a resistance between first electrode and second field plate is different from a resistance between first electrode and the first field plate electrode.Type: ApplicationFiled: March 7, 2022Publication date: March 16, 2023Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yusuke KOBAYASHI, Tomoaki INOKUCHI, Hiro GANGI, Tatsunori SAKANO, Yusuke HAYASHI
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Patent number: 11563112Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.Type: GrantFiled: September 9, 2020Date of Patent: January 24, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Ryohei Gejo, Tatsunori Sakano
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Publication number: 20230006057Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first wiring member, a semiconductor member, and an insulating member. The first wiring member includes a first extending portion. A part of the third electrode is between the first electrode and the first extending portion. An other part of the third electrode is between the first and second electrodes. The semiconductor member is provided between the first and second electrodes and between the first electrode and the first extending portion. The semiconductor member includes first to sixth semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is located between the first electrode and the third electrode. The insulating member includes the first insulating region. The first insulating region is provided between the third electrode and the semiconductor member.Type: ApplicationFiled: February 3, 2022Publication date: January 5, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Ryohei GEJO, Tatsunori SAKANO
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Patent number: 11531063Abstract: According to one embodiment, a design support device executes a first processing. The first processing includes setting a control value group for a semiconductor element. The semiconductor element includes gates including first and second gates. The control value group includes a first time difference between first and second timings. A voltage is applied to the first gate at the first timing. A voltage is applied to the second gate at the second timing. The first processing includes calculating a characteristic value from an output result when an electrical signal corresponding to the control value group is input to the semiconductor element. The first processing includes calculating a first function from history data including not less than one data set. The data set includes the control value group and a score based on the characteristic value. The design support device sets a new control value group.Type: GrantFiled: August 25, 2021Date of Patent: December 20, 2022Assignee: Kabushiki Kaisha ToshibaInventor: Tatsunori Sakano