Abstract: A semiconductor module according to an embodiment includes a first conductor, a second conductor, a third conductor, a fourth conductor, a plurality of conductive bonding materials, and a plurality of multi-gate semiconductor devices. The multi-gate semiconductor device includes a semiconductor layer, a collector electrode. The multi-gate semiconductor device includes an emitter electrode, a first gate electrode, and a second gate electrode bonded to the second to fourth conductors via conductive bonding materials.

Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.

Abstract: According to one embodiment, a semiconductor package includes a first conductive member, a second conductive member, a plurality of semiconductor devices, a wiring member, a first connection member, and a second connection member. The plurality of semiconductor devices is provided between the first conductive member and the second conductive member. One of the semiconductor devices includes a semiconductor member, a first electrode, a first control electrode, a second control electrode, and a second electrode. The first and second conductive members are electrically connected to the first and second electrodes, respectively. The wiring member includes first, second and third wiring layers, and an insulating region. A part of the insulating region is located between the first wiring layer and the third wiring layer, and between the third wiring layer and the second wiring layer. The second wiring layer includes a first connection region and a second connection region.

Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and a third conductive member wiring. The first conductive member includes a first conductive portion including a first face and a second conductive portion including a second face. The second conductive member includes a third conductive portion including a third face and a fourth conductive portion including a fourth face. The fourth conductive portion includes a facing conductive portion. The first semiconductor member is of a first conductive type. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The third partial region includes a facing face facing the facing conductive portion. The third conductive member wiring is electrically connected to the third conductive member.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.

Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and first and second insulating members. The semiconductor member is located between the second and first electrodes, and includes a first semiconductor region a second semiconductor region between the first semiconductor region and the first electrode, a third semiconductor region between the second semiconductor region and the first electrode, a fourth semiconductor region between the second semiconductor region and the first electrode, a fifth semiconductor region between the first semiconductor region and the second electrode, a sixth semiconductor region between the fifth semiconductor region and the second electrode, and a seventh semiconductor region between the fifth semiconductor region and the second electrode. A portion of the first insulating member is between the third electrode and the semiconductor member.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, first and second electrodes, a gate electrode, a gate terminal, a first conductive member, a first terminal, and a first insulating member. The semiconductor member includes first and second semiconductor regions, and a third semiconductor region provided between the first and second semiconductor regions. The first electrode is electrically connected to the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The gate terminal is electrically connected to the gate electrode. The first conductive member is electrically insulated from the first and second electrodes, and the gate electrode. The first terminal is electrically connected to the first conductive member.

Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to sixth semiconductor regions. The third semiconductor region includes first and second partial regions. A part of the fourth semiconductor region is between the second partial and second semiconductor regions. The fifth semiconductor region is between the second partial region and a part of the fourth semiconductor region. The sixth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The fourth electrode is between the first partial region and the third electrode. A part of the insulating member is provided between the semiconductor member and the third electrode, between the semiconductor member and the fourth electrode, and between the third and fourth electrodes.

Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.

Abstract: According to one embodiment, a semiconductor device includes first, and second conductive members, a first electrode including first and second electrode regions, a second electrode electrically connected to a first semiconductor film portion, a first semiconductor region including first to fourth partial regions, a second semiconductor region including the first semiconductor film portion, a third semiconductor region including a first semiconductor layer portion, a fourth semiconductor region provided between the first electrode and the first semiconductor region, and a first insulating member including insulating portions. The first partial region is between the first electrode region and the first conductive member. The second partial region is between the second electrode region and the second conductive member. The third partial region is between the first and second partial regions and between the first electrode and the fourth partial region.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench on a side of a first face; a first electrode on the side of the first face; a second electrode on the side of the second face; a first gate electrode in the first trench; a first field plate electrode electrically connected to the first electrode in the first trench, a second gate electrode in the second trench; and a second field plate electrode electrically connected to the first electrode in the second trench, a resistance between first electrode and second field plate is different from a resistance between first electrode and the first field plate electrode.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first wiring member, a semiconductor member, and an insulating member. The first wiring member includes a first extending portion. A part of the third electrode is between the first electrode and the first extending portion. An other part of the third electrode is between the first and second electrodes. The semiconductor member is provided between the first and second electrodes and between the first electrode and the first extending portion. The semiconductor member includes first to sixth semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is located between the first electrode and the third electrode. The insulating member includes the first insulating region. The first insulating region is provided between the third electrode and the semiconductor member.

Abstract: According to one embodiment, a design support device executes a first processing. The first processing includes setting a control value group for a semiconductor element. The semiconductor element includes gates including first and second gates. The control value group includes a first time difference between first and second timings. A voltage is applied to the first gate at the first timing. A voltage is applied to the second gate at the second timing. The first processing includes calculating a characteristic value from an output result when an electrical signal corresponding to the control value group is input to the semiconductor element. The first processing includes calculating a first function from history data including not less than one data set. The data set includes the control value group and a score based on the characteristic value. The design support device sets a new control value group.

Abstract: According to one embodiment, a semiconductor device includes first, second, third semiconductor members, a first conductive member, a connection member, and an insulating member. The first electrode includes first, second, and third electrode regions. A direction from the first toward second electrode is along a first direction. The second electrode includes fourth, fifth, and sixth electrode regions. The first semiconductor member includes first, second, third, fourth, and fifth partial regions. The second semiconductor member includes first and second semiconductor regions. The third semiconductor member includes third and fourth semiconductor regions. The third electrode is provided between the third partial region and the sixth electrode region in the first direction. The connection member is electrically connected to the first conductive member and the second electrode. The insulating member includes first, second, third, fourth, and fifth portions.

Abstract: A semiconductor device includes first and second electrode, a semiconductor part therebetween, and first and second control electrode. The first control electrode is provided in a first trench between the first electrode and the semiconductor part. The second control electrode is provided in a second trench between the second electrode and the semiconductor part. The semiconductor part includes first, third, fifth and sixth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The sixth layer is provided between the first layer and the second electrode. The second electrode is electrically connected to the first layer via a first-conductivity-region including the sixth layer.

Abstract: According to one embodiment, a semiconductor device includes first, and second conductive members, first, second, and third semiconductor regions, and an insulating part. A direction from the first conductive member toward the second conductive member is along a first direction. The first semiconductor region includes first and second partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The first conductive member is between the first partial region and the second conductive member. A direction from the second partial region toward the second semiconductor region is along the first direction. A direction from the second conductive member toward the second semiconductor region is along the second direction. The third semiconductor region is between the second partial region and the second semiconductor region. The insulating part includes a first insulating region, a second insulating region, and a third insulating region.

Abstract: According to one embodiment, a design support device executes a first processing. The first processing includes setting a control value group for a semiconductor element. The semiconductor element includes gates including first and second gates. The control value group includes a first time difference between first and second timings. A voltage is applied to the first gate at the first timing. A voltage is applied to the second gate at the second timing. The first processing includes calculating a characteristic value from an output result when an electrical signal corresponding to the control value group is input to the semiconductor element. The first processing includes calculating a first function from history data including not less than one data set. The data set includes the control value group and a score based on the characteristic value. The design support device sets a new control value group.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween and first to third control electrodes between the first electrode and the semiconductor part. The semiconductor part includes first and third layers of a first-conductivity-type and second and fourth layers of a second-conductivity-type. The second, third and fourth layers are provided between the first layer and the first electrode, between the second layer and the first electrode, and between the first layer and the second electrode, respectively. To the first to third control electrodes, first to third voltages greater than the threshold voltage thereof are applied at first to third timings, respectively. The third, second and first voltages are reduced to a lower level than the threshold voltage at a fourth timing after the first to third timings, at a fifth timing after the fourth timing and at a sixth timing after the fifth timing, respectively.