Abstract: A selective film deposition method includes exposing a substrate having a structure on which a first surface region containing a metal element and a second surface region containing a nonmetal inorganic material are both exposed, to a solution containing an organic substance represented by formula (1) shown below and a solvent to deposit a film of the organic substance on the first surface region selectively over the second surface region: R1(X)m (1) wherein R1 is a C4-C100 hydrocarbon group optionally containing a heteroatom or a halogen atom, and m hydrogen atoms of the hydrocarbon group are replaced with X; X is —PO3(R2)2, —O—PO3(R2)2, —CO2R2, —SR2, or —SSR1; each R2 is a hydrogen atom or a C1-C6 alkyl group; and m is a positive integer, and m/r is 0.01 to 0.25 where r is the number of carbons of the hydrocarbon group.

Abstract: A wet etching solution according to the present disclosure is an etching solution for selectively removing a second metal layer made of at least one of a cobalt-based material or a copper-based material from a semiconductor substrate while suppressing etching of a first metal layer made of a tungsten-based material, the first metal layer and the second metal layer being co-present on the semiconductor substrate, an oxide layer being formed on a surface layer of at least the at least one of a cobalt-based material or a copper-based material. The wet etching solution includes a solution in which a ?-diketone containing a trifluoromethyl group and a carbonyl group bonded together is dissolved in an organic solvent.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: The selective film deposition method according to an embodiment of the present disclosure includes depositing a film of an organic matter represented by the following formula (1) on a substrate having a structure where a first surface region containing at least one of a metal or a metal oxide and a second surface region containing a nonmetallic inorganic material are both exposed, selectively in the first surface region than in the second surface region, wherein N represents a nitrogen atom; and R1 represents a C1-C30 hydrocarbon group optionally containing a hetero atom or a halogen atom, R2, R3, R4, and R5 each independently represent a hydrogen atom or a C1-C10 hydrocarbon group optionally containing a hetero atom or a halogen atom, where the hydrocarbon group covers a branched or cyclic hydrocarbon group when containing 3 or more carbon atoms.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing ?-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

Abstract: Disclosed is a wet etching method for etching a metal-containing film on a substrate with the use of an etching solution, wherein the etching solution contains an organic solvent and a ?-diketone having a trifluoromethyl group and a carbonyl group bonded to each other, and wherein the metal-containing film contains a metal element capable of forming a complex with the ?-diketone.

Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing ?-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

Abstract: A fluorine gas generating device 100 which is characterized by having a cylindrical member 31a for circulating therein the main-product gas, a gas feed port 51a for introducing the main-product gas into the cylindrical member 31a, a gas discharge port 52a for discharging the main-product gas from the cylindrical member 31a, an adsorbent holding member 201 arranged in the cylindrical member 31a to form a space to provide a channel for the main-product gas circulated in the cylindrical member 31a, a stirring blade 202 for stirring the main-product gas that is introduced through the gas feed port 51a, and a gas flow guiding cylinder 203 for circulating or diffusing the main-product gas in the space within the cylindrical member 31a.

Abstract: Disclosed is a method for producing a Trifluoromethanesulfonic anhydride, which is characterized by that a reaction is conducted while kneading a Trifluoromethanesulfonic acid and diphosphorus pentoxide at a temperature that is 40° C. or higher and is lower than 100° C. by using a kneader-type reactor having a maximum power of 1.0 kW or greater per an actual capacity of 100 L and equipped with at least two-shaft blades, that the Trifluoromethanesulfonic anhydride to be generated is discharged, and that, while the residue in the reactor after the discharge is kneaded at a temperature that is 100° C. or higher and is lower than 140° C., the unreacted Trifluoromethanesulfonic acid is discharged, recovered and reused as the raw material. It is possible by this method to obtain a Trifluoromethanesulfonic anhydride with a high yield.

Abstract: Disclosed is a method for producing a fluoroalkanesulfonic acid including (1) the step of reacting concentrated sulfuric acid and/or fuming sulfuric acid with a fluoroalkanesulfonate to cause an acid decomposition, thereby obtaining a reaction mixture containing the fluoroalkanesulfonic acid and a sulfur component; and (2) the step of adding an oxidizing agent to the reaction mixture obtained by the above step and then conducting a distillation, thereby obtaining the fluoroalkanesulfonic acid from the reaction mixture. It is possible by this method to efficiently reduce the sulfur component, thereby industrially advantageously obtaining fluoroalkanesulfonic acid of high purity.

Abstract: A fluorine gas generating device 100 is provided which facilitates the maintenance operation of recovery and replacement of an adsorbing material that adsorbs hydrogen fluoride and supplies fluorine gas in a stable manner. The device comprises a refining line 20 that includes refining devices that, with the aid of adsorbing material, remove hydrogen fluoride gas that has been evaporated from a molten salt of an electrolytic tank 1 and mixed to fluorine gas generated at a positive pole 103a of the electrolytic tank. The refining line 20 comprises a first refining section 21 that includes at least two refining devices arranged in parallel and a second refining section 22 that includes at least two refining devices arranged in parallel and is positioned downstream of the first refining section 21. Fluorine gas that has passed through either one of the refining devices of the first refining section 21 is selectively led to either one of the refining devices of the second refining section.

Abstract: Disclosed is a method for producing a fluoroalkanesulfonic anhydride, which is characterized by that a reaction is conducted while kneading a fluoroalkanesulfonic acid and diphosphorus pentoxide at a temperature that is 40° C. or higher and is lower than 100° C. by using a kneader-type reactor having a maximum power of 1.0 kW or greater per an actual capacity of 100 L and equipped with at least two-shaft blades, that the fluoroalkanesulfonic anhydride to be generated is discharged, and that, while the residue in the reactor after the discharge is kneaded at a temperature that is 100° C. or higher and is lower than 140° C., the unreacted fluoroalkylsulfonic acid is discharged, recovered and reused as the raw material. It is possible by this method to obtain a fluoroalkanesulfonic anhydride with a high yield.

Abstract: A fluorine gas generating apparatus includes an electrolytic cell where the molten salt is retained and which is separated and divided above the liquid level of the molten salt into a first gas chamber where a product gas mainly containing a fluorine gas generated at an anode immersed in the molten salt is led and a second gas chamber where a byproduct gas mainly containing a hydrogen gas generated at a cathode immersed in the molten salt is led, and a refining device refining the fluorine gas by coagulating with a cooling medium and trapping a hydrogen fluoride gas evaporated from the molten salt in the electrolytic cell and mixed in the product gas generated from the anode. The cooling medium for coagulation of the hydrogen fluoride gas in the refining device and discharged is re-used as a utility gas used at spots in the fluorine gas generating apparatus.

Abstract: A fluorine gas generating apparatus generating a fluorine gas by electrolyzing hydrogen fluoride in molten salt, includes: an electrolytic cell including, above a liquid level of molten salt, a first gas chamber into which a product gas mainly containing the fluorine gas generated at an anode immersed in the molten salt and a second gas chamber separated from the first gas chamber into which a byproduct gas mainly containing a hydrogen gas generated at a cathode immersed in the molten salt; a hydrogen fluoride supply source retaining hydrogen fluoride to be replenished in the electrolytic cell; a refining device trapping a hydrogen fluoride gas evaporated from the molten salt in the electrolytic cell and mixed in the product gas generated from the anode to refine the fluorine gas; and a recovery facility conveying and recovering the hydrogen fluoride trapped in the refining device in the electrolytic cell or the hydrogen fluoride supply source.

Abstract: A transformant is prepared to insert at least a gene expression cassette comprising a gene involved in the synthesis of 2-deoxy-scyllo-inosose into E. coli as host cells. A 2-deoxy-scyllo-inosose is synthesized from D-glucose, oligosaccharide, polysaccharide, starch and rice bran, using the transformant. A culture solution containing the 2-deoxy-scyllo-inosose is treated with a mixed bed or double bed type column comprising a hydrogen form of strong acidic cation exchange resin and an organic ion form of basic anion exchange resin. The 2-deoxy-scyllo-inosose as purified is reacted with trimethoxymethane to convert into 2-deoxy-scyllo-inosose dimethylketal, and the dimethylketal is crystallized and purified. Then, DOI is highly purified through hydrolyzing the dimethylketal in the presence of acid.

Abstract: A transformant is prepared to insert at least a gene expression cassette comprising a gene involved in the synthesis of 2-deoxy-scyllo-inosose into E. coli as host cells. A 2-deoxy-scyllo-inosose is synthesized from D-glucose, oligosaccharide, polysaccharide, starch and rice bran, using the transformant. A culture solution containing the 2-deoxy-scyllo-inosose is treated with a mixed bed or double bed type column comprising a hydrogen form of strong acidic cation exchange resin and an organic ion form of basic anion exchange resin. The 2-deoxy-scyllo-inosose as purified is reacted with trimethoxymethane to convert into 2-deoxy-scyllo-inosose dimethylketal, and the dimethylketal is crystallized and purified. Then, DOI is highly purified through hydrolyzing the dimethylketal in the presence of acid.

Abstract: Disclosed is a method for producing a fluoroalkanesulfonic acid including (1) the step of reacting concentrated sulfuric acid and/or fuming sulfuric acid with a fluoroalkanesulfonate to cause an acid decomposition, thereby obtaining a reaction mixture containing the fluoroalkanesulfonic acid and a sulfur component; and (2) the step of adding an oxidizing agent to the reaction mixture obtained by the above step and then conducting a distillation, thereby obtaining the fluoroalkanesulfonic acid from the reaction mixture. It is possible by this method to efficiently reduce the sulfur component, thereby industrially advantageously obtaining fluoroalkanesulfonic acid of high purity.

Abstract: A fluorine gas generating device 100 which is characterized by having a cylindrical member 31a for circulating therein the main-product gas, a gas feed port 51a for introducing the main-product gas into the cylindrical member 31a, a gas discharge port 52a for discharging the main-product gas from the cylindrical member 31a, an adsorbent holding member 201 arranged in the cylindrical member 31a to form a space to provide a channel for the main-product gas circulated in the cylindrical member 31a, a stirring blade 202 for stirring the main-product gas that is introduced through the gas feed port 51a, and a gas flow guiding cylinder 203 for circulating or diffusing the main-product gas in the space within the cylindrical member 31a.

Abstract: A direct-touch diaphragm valve according to the present invention includes a valve body having inlet and outlet passages, a valve chamber being in communication with the inlet and outlet passages, a valve seat located around an open inner end of the inlet passage and a diaphragm arranged on the valve seat so as to hermetically seal the valve chamber and open or close the inlet and outlet passages, wherein the valve seat and the diaphragm have respective contact surfaces formed therebetween such that: such that: the contact surface of the valve seat has a surface roughness Ra of 0.1 to 10.0 ?m and a curvature radius Ra of 100 to 1000 mm; and the area ratio Sb/Sa of a contact area Sb of the valve seat with the diaphragm to a gas contact surface area Sa of the diaphragm ranges from 0.2 to 10%.