Patents by Inventor Tatsuo Shibata

Tatsuo Shibata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220359817
    Abstract: A magnetic element according to an embodiment includes a wiring layer extending in a first direction and including a ferromagnetic material and a nonmagnetic layer laminated on the wiring layer in a second direction. The wiring layer includes a side surface inclined with respect to the second direction in a cross section orthogonal to the first direction. The side surface has one or more bending points at which an inclination angle with respect to the second direction becomes discontinuous. An inclination angle of a first inclined surface far from the nonmagnetic layer is smaller than an inclination angle of a second inclined surface close to the nonmagnetic layer in a state in which a first bending point at a position farthest from the nonmagnetic layer among the bending points is interposed between the inclination angles.
    Type: Application
    Filed: July 3, 2020
    Publication date: November 10, 2022
    Applicant: TDK CORPORATION
    Inventors: Takuya ASHIDA, Tatsuo SHIBATA
  • Patent number: 11495735
    Abstract: A spin-current magnetization rotational element includes: a ferromagnetic metal layer; and a spin-orbit torque wiring that extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and is bonded to the ferromagnetic metal layer. A direction of a spin injected into the ferromagnetic metal layer from the spin-orbit torque wiring intersects a magnetization direction of the ferromagnetic metal layer. The ferromagnetic metal layer has shape anisotropy and has a demagnetizing field distribution caused by the shape anisotropy. The demagnetizing field distribution generates an easy magnetization rotational direction in which the magnetization of the ferromagnetic metal layer is most easily reversed. The easy magnetization rotational direction intersects the first direction in a plan view seen from the stacking direction.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: November 8, 2022
    Assignee: TDK CORPORATION
    Inventors: Tatsuo Shibata, Tomoyuki Sasaki, Tohru Oikawa
  • Patent number: 11469370
    Abstract: A magnetic domain wall movement type magnetic recording element includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. The magnetic recording layer has a concave-convex structure on a second surface opposite to a first surface which faces the non-magnetic layer.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: October 11, 2022
    Assignee: TDK CORPORATION
    Inventors: Kuniyasu Ito, Tatsuo Shibata
  • Patent number: 11449742
    Abstract: A product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of variable-input product operation elements and a plurality of fixed-input product operation elements. Each of the plurality of variable-input product operation elements and the plurality of fixed-input product operation elements and is a resistance change element. The product-sum operation device includes variable input units and that input a variable signal to a plurality of variable-input product operation elements and fixed input units and that input a determined signal to the plurality of fixed-input product operation elements and in synchronization with the variable signal. The sum operator includes an output detector that determines the sum of outputs from the plurality of variable-input product operation elements and outputs from the plurality of fixed-input product operation elements.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: September 20, 2022
    Assignee: TDK CORPORATION
    Inventor: Tatsuo Shibata
  • Patent number: 11442695
    Abstract: A product-sum operation device includes a product operator, a sum operator, and a malfunction determiner. The product operator includes a plurality of product operation elements (10AA) to (10AC), and each of the plurality of product operation elements (10AA) to (10AC) is a resistance change element. The sum operator includes an output detector that detects the sum of outputs from the plurality of product operation elements (10AA) to (10AC). The malfunction determiner determines that a malfunction has occurred when the sum detected by the output detector exceeds a specified value. The specified value is a value equal to or greater than a maximum value of the sum that can be detected by the output detector when the plurality of product operation elements (10AA) to (10AC) all operate normally.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: September 13, 2022
    Assignee: TDK CORPORATION
    Inventor: Tatsuo Shibata
  • Patent number: 11429348
    Abstract: A multiply and accumulate calculation device includes a multiple calculation unit and a accumulate calculation unit. The multiple calculation unit includes a plurality of multiple calculation elements, which are variable resistance elements, and at least one reference element. The accumulate calculation unit includes an output detector configured to detect a total value of at least outputs from the plurality of multiple calculation elements. Each of the plurality of multiple calculation elements is a magnetoresistance effect element including a magnetized free layer having a magnetic domain wall, a magnetization fixed layer in which a magnetization direction is fixed, and a nonmagnetic layer sandwiched between the magnetized free layer and the magnetized fixed layer. The reference element is a reference magnetoresistance effect element having a magnetization free layer that does not have the magnetic domain wall.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: August 30, 2022
    Assignee: TDK CORPORATION
    Inventors: Tatsuo Shibata, Tomoyuki Sasaki
  • Publication number: 20220261559
    Abstract: An arithmetic circuit includes a variable resistance element having three terminals of a first terminal, a second terminal, and a third terminal and configured such that the resistance value is variable, an input line connected to the first terminal, a capacitor connected to the second terminal and provided between the second terminal and the reference potential, a first switching element connected to the third terminal, a wiring connected to the third terminal through the first switching element, a second switching element connected to a first end of the wiring, and a third switching element connected to a second end of the wiring.
    Type: Application
    Filed: February 27, 2020
    Publication date: August 18, 2022
    Applicant: TDK CORPORATION
    Inventors: Tatsuo SHIBATA, Yukio TERASAKI
  • Publication number: 20220231084
    Abstract: A magnetic domain wall moving element includes a magnetic recording layer which extends in a first direction and includes a ferromagnetic material, and a first conductive layer and a second conductive layer which are separately connected to the magnetic recording layer, the first conductive layer includes a ferromagnetic first layer in contact with the magnetic recording layer, the first layer includes a mixing layer at an interface with the magnetic recording layer, a ferromagnetic material and a dissimilar metal are mixed in the mixing layer, and the dissimilar metal is a metal different from each of the ferromagnetic material that mainly constitutes the first layer and the ferromagnetic material that mainly constitutes the magnetic recording layer.
    Type: Application
    Filed: May 12, 2020
    Publication date: July 21, 2022
    Applicant: TDK CORPORATION
    Inventors: Tetsuhito SHINOHARA, Takuya ASHIDA, Tatsuo SHIBATA
  • Publication number: 20220216394
    Abstract: A magnetic domain wall moving element according to an embodiment includes: a magnetic recording layer, a ferromagnetic layer, and a non-magnetic layer arranged between the magnetic recording layer and the ferromagnetic layer, wherein the ferromagnetic layer contains an additive element dispersed therein, and the additive element is one or more of H, He, Ne, Ar, Kr, Xe, N, C, Ag, Cu, Hg, Au, Pb, Zn, and Bi.
    Type: Application
    Filed: January 5, 2021
    Publication date: July 7, 2022
    Applicant: TDK CORPORATION
    Inventors: Minoru OTA, Tatsuo SHIBATA, Minoru SANUKI
  • Patent number: 11367834
    Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: June 21, 2022
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Tatsuo Shibata, Katsuyuki Nakada, Yoshitomo Tanaka
  • Publication number: 20220188618
    Abstract: This neuromorphic device including: a first element group; and a second element group, in which each of the first element group and the second element group includes a plurality of magnetic domain wall movement elements, each of the plurality of magnetic domain wall movement elements includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the mag
    Type: Application
    Filed: October 21, 2021
    Publication date: June 16, 2022
    Applicant: TDK CORPORATION
    Inventors: Shogo YAMADA, Tatsuo SHIBATA
  • Publication number: 20220190233
    Abstract: A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.
    Type: Application
    Filed: December 6, 2021
    Publication date: June 16, 2022
    Applicant: TDK CORPORATION
    Inventors: Shogo YONEMURA, Tomoyuki SASAKI, Tatsuo SHIBATA
  • Publication number: 20220165934
    Abstract: A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.
    Type: Application
    Filed: December 6, 2021
    Publication date: May 26, 2022
    Applicant: TDK CORPORATION
    Inventors: Shogo YAMADA, Minoru OTA, Tatsuo SHIBATA
  • Publication number: 20220158082
    Abstract: A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.
    Type: Application
    Filed: November 15, 2021
    Publication date: May 19, 2022
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Tatsuo SHIBATA, Tohru OIKAWA
  • Patent number: 11335849
    Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a widt
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: May 17, 2022
    Assignee: TDK CORPORATION
    Inventors: Shogo Yamada, Tomoyuki Sasaki, Yukio Terasaki, Tatsuo Shibata
  • Publication number: 20220138441
    Abstract: A multiply and accumulate calculation device including a variable resistor array unit having a plurality of variable resistance elements, a reference array unit having a reference resistance element having a fixed resistance value, a signal input unit that generates an input signal from input data, and inputs the input signal to the variable and reference resistance elements, a first detection unit that detects a current flowing through the variable resistor array unit, based on the input signal applied to the variable resistance elements, a second detection unit that detects a current flowing through the reference array unit, based on the input signal applied to the reference resistance element, and a correction calculation unit that performs a predetermined calculation on the output from the first detection unit, based on the output from the second.
    Type: Application
    Filed: March 1, 2019
    Publication date: May 5, 2022
    Applicant: TDK CORPORATION
    Inventors: Tatsuo SHIBATA, Yukio TERASAKI
  • Publication number: 20220109101
    Abstract: According to an embodiment, there is provided an integrated device including: a substrate; and a laminated structure stacked on the substrate, in which the laminated structure includes a first element group and a second element group disposed at a position farther from the substrate than the first element group, each of the first element group and the second element group includes a plurality of domain wall movement elements, each of the plurality of domain wall movement elements includes a domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer, and each of the domain wall movement elements belonging to the second element group has a lower critical current density required for moving a domain wall of the domain wall movement layer than each of the domain wall movement elements belonging to the first element group.
    Type: Application
    Filed: September 30, 2021
    Publication date: April 7, 2022
    Applicant: TDK CORPORATION
    Inventors: Shogo YAMADA, Tatsuo SHIBATA
  • Publication number: 20220109102
    Abstract: A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.
    Type: Application
    Filed: September 29, 2021
    Publication date: April 7, 2022
    Applicant: TDK CORPORATION
    Inventors: Tatsuo SHIBATA, Tomoyuki SASAKI
  • Publication number: 20220092396
    Abstract: A product-sum operation device including: product operation units generating output signals by multiplying input signals corresponding to input values; a current detection unit executing a current detecting process in which a current output from the product operation units with a predetermined time delay from input of the input signal and a current output from the product operation units at an interval thereafter are detected in a time span from a first transient response to before occurrence of a second transient response, the first transient response due to charging to a parasitic capacitance of the product operation units by input of the input signal and the second transient response being due to discharging from the parasitic capacitance of the product operation units by input of the input signal; and a sum operation unit calculating a value relating to a total sum of the output signals based on currents detected.
    Type: Application
    Filed: January 9, 2019
    Publication date: March 24, 2022
    Applicant: TDK CORPORATION
    Inventors: Kuniyasu ITO, Tatsuo SHIBATA, Yukio TERASAKI
  • Publication number: 20220051708
    Abstract: A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.
    Type: Application
    Filed: May 15, 2020
    Publication date: February 17, 2022
    Applicant: TDK CORPORATION
    Inventors: Shogo YAMADA, Tatsuo SHIBATA, Yugo ISHITANI