Abstract: A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.

Abstract: A multiply-accumulate calculation device includes: a plurality of first multiple calculation elements configured to generate first output signals by multiplying a first input signal corresponding to an input value by a weight and output the first output signals; and an accumulate calculation unit configured to calculate a sum of the first output signals output from the plurality of first multiple calculation elements in a calculation period from a point in time at which transition to a steady state has occurred after transient responses caused by charging to parasitic capacitors of the plurality of first multiple calculation elements according to input of the first input signal to a point in time after transient responses caused by discharging from the parasitic capacitors of the plurality of first multiple calculation elements according to input of the first input signal have started to be generated.

Abstract: A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

Abstract: A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer which is laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other.

Abstract: A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.

Abstract: A magnetic domain wall motion element includes a wiring layer including a first ferromagnetic layer and configured to extend in a first direction, a second ferromagnetic layer, and a spacer layer sandwiched between the wiring layer and the second ferromagnetic layer. In any cross section of the wiring layer taken along a plane perpendicular to the first direction, a first thickness of the wiring layer at a center in a width direction is thinner than a second thickness of the wiring layer at a first outer. peripheral portion outside the center in the width direction.

Abstract: A drive circuit including: a load resistor; a variable resistance element configured to have at least a first terminal and a second terminal and be capable of changing a resistance value; and a constant current source configured to determine a magnitude of a current flowing through the load resistor based on an input voltage and a resistance value of the variable resistance element, in which a voltage across the load resistor is output as an output voltage.

Abstract: A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

Abstract: A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.

Abstract: A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.

Abstract: A magnetic domain wall motion element includes a magnetic domain wall motion layer in which a magnetic domain wall is formed, a ferromagnetic layer, and a nonmagnetic layer interposed between the magnetic domain wall motion layer and the ferromagnetic layer, wherein at least a portion of a first surface of the magnetic domain wall motion layer on a side closer to the ferromagnetic layer, at a position overlapping with the ferromagnetic layer in a plan view in a laminating direction, is curved.

Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.

Abstract: A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

Abstract: A reservoir element includes a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other, a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements, and a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins, wherein, the magnetoresistive effect elements are seen from the first direction, the second ferromagnetic layer overlaps part of the first ferromagnetic layer, the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen from the first direction, and the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.

Abstract: A multiply-accumulate calculation device includes: multiple calculation units which generates output signals by multiplying an input signal corresponding to an input value and having a rising part, a signal part, and a falling part by a weight, and output the output signals; an accumulate calculation unit configured to calculate a sum of the output signals output from the plurality of multiple calculation units; and a correction unit configured to execute correction processing for correcting the sum of the output signals on the basis of a correction value including at least one of a first value incorporated into the sum by a current flowing into variable resistors of the multiple calculation units due to the rising part of the input signal, and a second value incorporated into the sum by a current flowing into the variable resistors of the multiple calculation units due to the falling part of the input signal.

Abstract: A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.

Abstract: A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

Abstract: A magnetic domain wall movement element according to the present embodiment includes a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer that are laminated in an order from a side close to a substrate. On a cross-section along a lamination direction and a second direction orthogonal to a first direction in which the first ferromagnetic layer extends in a plan view from the lamination direction, a shortest width of the first ferromagnetic layer in the second direction is shorter than a width of the nonmagnetic layer in the second direction.

Abstract: A magnetic domain wall moving element includes a first ferromagnetic layer, non-magnetic layer, second ferromagnetic layer, first magnetization fixed part, second magnetization fixed part, first surface layer and second surface layer.

Abstract: A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.