Abstract: This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance elect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

Abstract: A magnetic recording array includes domain wall motion elements and wirings, the domain wall motion elements includes first, second, and third elements, each having a magnetic wall motion layer with first and second end portions, the second element has the second end portion closest to the first end portion of the first element, the third element has the second end portion closest or second closest to the first end portion of the first element, a first distance between the first end portion of the first element and the second end portion of the second element and a second distance between the first end portion of the first element and the second end portion of the third element are shorter than a third distance between the first end portion of the first element and the first end portion closest to the first end portion of the first element.

Abstract: A magnetic domain wall movement element according to the present embodiment includes a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer that are laminated in an order from a side close to a substrate. On a cross-section along a lamination direction and a second direction orthogonal to a first direction in which the first ferromagnetic layer extends in a plan view from the lamination direction, a shortest width of the first ferromagnetic layer in the second direction is shorter than a width of the nonmagnetic layer in the second direction.

Abstract: A multiply-accumulate calculation device includes: multiple calculation units which generates output signals by multiplying an input signal corresponding to an input value and having a rising part, a signal part, and a falling part by a weight, and output the output signals; an accumulate calculation unit configured to calculate a sum of the output signals output from the plurality of multiple calculation units; and a correction unit configured to execute correction processing for correcting the sum of the output signals on the basis of a correction value including at least one of a first value incorporated into the sum by a current flowing into variable resistors of the multiple calculation units due to the rising part of the input signal, and a second value incorporated into the sum by a current flowing into the variable resistors of the multiple calculation units due to the falling part of the input signal.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0?x?4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.

Abstract: A reservoir element includes a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other, a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements, and a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins, wherein, the magnetoresistive effect elements are seen from the first direction, the second ferromagnetic layer overlaps part of the first ferromagnetic layer, the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen from the first direction, and the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.

Abstract: A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox(0<x?4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.

Abstract: A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.

Abstract: A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.

Abstract: A magnetic domain wall movement element includes a wiring layer containing a ferromagnetic material, a non-magnetic layer in contact with the first surface of the wiring layer, a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material; and a second conductive layer connected to the wiring layer at a distance from the first conductive layer. A first part of the connection face of the first conductive layer is directly connected to the wiring layer, and a second part of the connection face other than the first part is connected to the wiring layer via the non-magnetic layer.

Abstract: A memristor circuit that can increase a maximum rate of change of a conductance of the memristor circuit while maintaining linearity and symmetry in the change in the conductance is provided. A memristor circuit includes: a first magnetoresistance effect element including a first resistance change unit configured to change a resistance value thereof based on a current flowing therein, a first electrode provided at a first end of the first resistance change unit, and a second electrode provided at a second end of the first resistance change unit; and a first field effect transistor including a gate electrode, the gate electrode being connected to a transmission path between the first electrode connected to a power supply and the power supply.

Abstract: A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.

Abstract: A magnetic domain wall movement element includes a first ferromagnetic layer, a magnetic recording layer, a nonmagnetic layer, a first electrode, and a second electrode. The magnetic recording layer includes: a first region which overlaps with the first electrode and the first ferromagnetic layer in a first direction; a second region which overlaps with the second electrode and the first ferromagnetic layer in the first direction; and a third region which is located between the first region and the second region. An area of a first section in the first region facing the first electrode is larger than an area of a second section in the second region facing the second electrode. The first ferromagnetic layer overlaps with a part of the first electrode and a part of the second electrode in the first direction.

Abstract: A magnetic wall utilization type analog memory device includes a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween, a first magnetization supplying part which is configured to supply magnetization oriented in the first direction to the magnetic wall driving layer and a second magnetization supplying part which is configured to supply magnetization oriented in a second direction reversed with respect to the first direction, wherein at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer and extends in a direction intersecting the magnetic wall driving layer.

Abstract: A product-sum operation device includes a product operator, a sum operator, and a malfunction determiner. The product operator includes a plurality of product operation elements (10AA) to (10AC), and each of the plurality of product operation elements (10AA) to (10AC) is a resistance change element. The sum operator includes an output detector that detects the sum of outputs from the plurality of product operation elements (10AA) to (10AC). The malfunction determiner determines that a malfunction has occurred when the sum detected by the output detector exceeds a specified value. The specified value is a value equal to or greater than a maximum value of the sum that can be detected by the output detector when the plurality of product operation elements (10AA) to (10AC) all operate normally.

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

Abstract: A product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of variable-input product operation elements and a plurality of fixed-input product operation elements. Each of the plurality of variable-input product operation elements and the plurality of fixed-input product operation elements and is a resistance change element. The product-sum operation device includes variable input units and that input a variable signal to a plurality of variable-input product operation elements and fixed input units and that input a determined signal to the plurality of fixed-input product operation elements and in synchronization with the variable signal. The sum operator includes an output detector that determines the sum of outputs from the plurality of variable-input product operation elements and outputs from the plurality of fixed-input product operation elements.

Abstract: A product-sum operation device, a neuromorphic device, and a method for using the product-sum operation device are provided which can, when applied to a neural network, curb the possibility that the performance of the neural network may be greatly impaired. The product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of product operation elements, each of which is a resistance change element. The sum operator includes an output detector that detects the sum of outputs from the plurality of product operation elements and the resistance change element includes a fuse portion which is disconnected when a malfunction which increases an output current from the resistance change element has occurred in the resistance change element.

Abstract: A multiply and accumulate calculation device includes a multiple calculation unit and a accumulate calculation unit. The multiple calculation unit includes a plurality of multiple calculation elements, which are variable resistance elements, and at least one reference element. The accumulate calculation unit includes an output detector configured to detect a total value of at least outputs from the plurality of multiple calculation elements. Each of the plurality of multiple calculation elements is a magnetoresistance effect element including a magnetized free layer having a magnetic domain wall, a magnetization fixed layer in which a magnetization direction is fixed, and a nonmagnetic layer sandwiched between the magnetized free layer and the magnetized fixed layer. The reference element is a reference magnetoresistance effect element having a magnetization free layer that does not have the magnetic domain wall.