Abstract: The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.

Abstract: [Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects. [Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.

Abstract: [Problem] To provide a method capable of forming an insulating film suffering less from both shrinkage and stress. [Means for solving] A method for forming a silicon dioxide film, comprising the steps of: coating a substrate with a polysilazane composition to form a coat, and then heating the formed coat in a hydrogen peroxide atmosphere at 50 to 200° C. This method enables to form isolation structures such as various insulating films.

Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.

Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.

Abstract: The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

Abstract: This invention provides a process for producing a pattern, which can produce a semiconductor device or a display device at low cost, and a pattern produced by the production process. In the present invention, a highly lyophobic surface covering layer is formed on a photosensitive resin composition layer formed on a substrate, and a pattern is formed. The surface covering layer, which remains unremoved on the substrate, is highly lyophobic while the covering-removed part has relatively high lyophilicity. Accordingly, an electrically conductive material-containing composition can be selectively deposited on the covering-removed part, and a desired wiring pattern can be provided.

Abstract: A change in dimension of a pattern formed of a polysilsesquiazane photosensitive composition containing a photoacid generating agent is prevented. The photosensitive composition according to the present invention is characterized by comprising: a modified polysilsesquiazane having a weight average molecular weight of 500 to 200,000 comprising basic constitutional units represented by formula —[SiR1(NR2)1.5]— wherein R1's each independently represent an alkyl group having 1 to 3 carbon atoms or a substituted or unsubstituted phenyl group; R2's each independently represent hydrogen, an alkyl group having 1 to 3 carbon atoms, or a substituted or unsubstituted phenyl group, up to 50% by mole of said basic constitutional units having been replaced by a linking group other than the silazane bond; a photoacid generating agent; and a basic material.

Abstract: There is provided a photosensitive composition which possesses excellent storage stability and can yield an interlayer insulation film with an improved film thickness limit. The photosensitive composition is characterized by comprising: a modified polysilsesquiazane having a weight average molecular weight of 500 to 200,000 comprising basic constitutional units represented by formula —[SiR1(NR2)1.5]— wherein R1's each independently represent an alkyl group having 1 to 3 carbon atoms or a substituted or unsubstituted phenyl group; R2's each independently represent hydrogen, an alkyl group having 1 to 3 carbon atoms, or a substituted or unsubstituted phenyl group, up to 50% by mole of the basic constitutional units having been replaced by a linking group other than the silazane bond; and a photoacid generating agent.

Abstract: A finely patterned silica type ceramic film suitable as an inter-layer dielectric is formed in a short time by applying, onto a substrate, a positive working radiation sensitive polysilazane composition comprising a modified poly(sil sesquiazane) having a number average molecular weight of 100 to 100,000 and containing a basic constituent unit represented by the general formula: —[SiR6(NR7)1.5]— and other constituent units represented by the general formula: —[SiR62NR7]— and/or —[SiR63(NR7)0.5]— (R6 and R7 independently represent a hydrogen atom, a C1-3 alkyl group or a substituted or unsubstituted phenyl group) in a ratio of 0.

Abstract: A photosensitive polysilazane which may be used as a positive-tone photoresist, and a method of forming a patterned polysilazane film by use of such a composition are provided. The photosensitive polysilazane composition of the invention is characterized by comprising a polysilazane, particularly polymethylsilazane or polyphenylsilazane, and an optically acid-generating agent. The patterned polysilazane film is obtained by exposing a coating of the photosensitive polysilazane composition of the invention to light in a pattern and dissolving off the exposed portion.

Abstract: A finely patterned silica type ceramic film suitable as an inter-layer dielectric is formed in a short time by applying, onto a substrate, a positive working radiation sensitive polysilazane composition comprising a modified poly(sil sesquiazane) having a number average molecular weight of 100 to 100,000 and containing a basic constituent unit represented by the general formula: —[SiR6(NR7)1.5]— and other constituent units represented by the general formula: —[SiR62NR7]— and/or —[SiR63(NR7)0.5]— (R6 and R7 independently represent a hydrogen atom, a C1-3 alkyl group or a substituted or unsubstituted phenyl group) in a ratio of 0.

Abstract: According to the present invention, a polycrystalline silicon thin film with a large crystal grain size is formed on a substrate, other than single crystalline silicon, e.g. on a glass substrate with a low strain point, by plasma CVD or photo CVD, and the polycrystalline silicon thin film thus obtained has a high (100) orientation percentage and a low (220) orientation percentage, a low hydrogen content, a low fluorine content in the film, and a large crystal grain size. It has excellent flatness and is suitable for microstructure fabrication and for the manufacture of a thin film transistor. Because a thin film transistor with a large area can be produced, it is also usable for many applications such as liquid crystal display. By introducing a high concentration of dopant into the interface region between the polycrystalline silicon film and the substrate, the growth of the polycrystalline grain is enhanced because the high concentration of dopant becomes the nucleus for crystal growth.