Abstract: A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.

Abstract: The present invention aims at providing a novel oxide fluorescent material. The novel oxide fluorescent material is a fluorescent material including: as constituent elements, at least one or more elements selected from the group consisting of Mg, Ca, Sr and Ba; at least one or more elements selected from the group consisting of Si and Ge; at least one or more elements selected from the group consisting of rare earth elements; and oxygen, wherein the crystal structure is a pseudowollastonite crystal structure. The fluorescent substance includes a layer 54 comprised of the fluorescent material and a layer 52 including at least one or more elements selected from the group consisting of Si and Ge, the layers stacked on a substrate 51. The fluorescent substance includes an adjacent layer that includes at least one or more elements selected from the group consisting of Si and Ge and is in contact with the portion constituted by the fluorescent material.

Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.

Abstract: A light-receiving device comprises, on a substrate, a first light-receiving part for detecting light of a first wavelength range, and a second light-receiving part for detecting light of a second wavelength range. At least a part of incident light is transmitted through the first light-receiving part and then received by the second light-receiving part. The central wavelength of the first wavelength range is longer than the central wavelength of the second wavelength range, and the first light-receiving part is composed of an organic semiconductor having an absorption spectral maximum in the first wavelength range.

Abstract: An electron-beam excitation laser has a laser structure with a light emitter and reflectors on one hand and an electron source on the other hand, wherein at least part of the light emitter or reflectors has a multidimensional photonic crystal structure. An electron-beam excitation laser includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the reflectors and/or the light emitter in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants may be formed with a light-emitting material.

Abstract: The present invention is intended to provide a light emitting device which can be operated at a low voltage, has excellent luminous efficiency, stability, production cost, and the like. A light emitting device which has at least electrode layers 11, 14, a light emitting layer 13, a structure layer 12 between the electrode layer 11 and light emitting layer 13, wherein structure layer 12 has domains composed of a first material, and domains composed of a second material. It is preferable for the structure layer to have a plurality of columnar domains composed of the first material, and the domains composed of the second material around the domains composed of the first material, and for the domains composed of the first material are arranged regularly. It is preferable that the first material and the second material are composed of different oxides.

Abstract: An optical transmission device comprises an optical transmission medium and a plurality of optical receivers, and the optical transmission medium has a linear line waveguide. At least one of the optical receivers is adapted to receive a first optical signal propagated through the line waveguide, while at least one of the optical receivers is adapted to receive a second optical signal propagated through the optical transmission medium.

Abstract: A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths.

Abstract: A reconfigurable optoelectronic circuit adapted to alter its internal configuration includes logic circuits, electric connections and optical connections. It comprises a plurality of logic blocks of electronic circuit and an optical circuit interconnecting them and both the internal configuration of each of the logic blocks and the optical interconnections of the logic blocks using the optical circuit are alterable.

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Abstract: An information transmission process is disclosed in which information is transmitted between a signal-emitting port for emitting an optical signal and plural signal-receiving ports through a light transmissive medium in an optical circuit device. The process comprises a first step of transmitting a first information from the signal-emitting port by emitting light in a first emission angle range to transmit first information to at least one of the signal-receiving ports, and a second step, after the first step, of transmitting second information from the signal-emitting port by emitting light in a second emission angle range different from the first emission angle range to transmit second information to at least one of the signal-receiving ports.

Abstract: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

Abstract: Disclosed are an optical-path changing apparatus and a light radiating apparatus. The optical-path changing apparatus includes a light scattering member such as a light reflecting member, and a guide member for guiding the light scattering member. The direction of light scattered by the light scattering member is substantially constant during movement of the light scattering member guided by the guide member. The light radiating apparatus includes a fluorescent member, a guide member for guiding the fluorescent member, and a light emitting device for irradiating with light the fluorescent member moving along the guide member.

Abstract: A light-emitting device is provided that is excellent in light emission efficiency and stability. The light-emitting device has a first part of a first dielectric constant, a second part of a second dielectric constant and a third part of a third dielectric constant, and has a triple junction where they are in contact with one another. Moreover, a first and a second electrode are provided for applying a voltage for controlling an electric field at the triple junction and in the vicinity thereof. Further, at least one of the first, the second and the third parts is a constituted by light-emitting material, and the triple junction forms a closed line.

Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.

Abstract: A method of manufacturing an electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged to electrically connect the electrodes.

Abstract: An optical transmission device includes a planar waveguide for transmitting an optical signal, a light emitting unit for inputting a light beam in the planar waveguide, and a setting unit for setting a propagation angle of a light beam transmitted in the planar waveguide. A plurality of light beams with different propagation angles are transmitted in the planar waveguide.

Abstract: An optoelectronic substrate comprises an electronic device, an optical device, and an optical wiring layer, the optical wiring layer comprising a photonic crystal. An optoelectronic substrate comprises an electronic device, an optical device, and an optical wiring layer, wherein the optical wiring layer is comprised of a periodic structure having a repeating period nearly equal to or smaller than the wavelength of light employed for signal transmission. An optoelectronic substrate comprises an electronic device, an optical device, an electric wiring connected to the electronic device, an optical wiring layer, and a base plate, wherein the optical wiring layer is employed as an insulating layer between the base plate and the electric wiring.

Abstract: A method of manufacturing a nonostructure, which enables cylindrical pores arrayed according to any periodic pattern to be easily made on a substrate over a large area at a low cost in a short period of time. The method of manufacturing a structure having such pores includes the steps of preparing a substrate having recesses in its surface, providing a film on the surface of the substrate and anodizing the film.

Abstract: A design method and a design device can design an optimal optoelectronic circuit in a relatively short period of time by exploiting the performance of hardware. They have a step of generating a connection list to be carried by electric circuits (electric nets) and a connection list to be carried by optical connections (optical nets), a step of designing the layout of electric circuits and subsequently designing optical connections and a step of evaluating the designs.