Patents by Inventor Tatsuya Iwasaki

Tatsuya Iwasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting device with at least one triple junction formed in a plane
    Patent number: 7473942
    Abstract: A light-emitting device is provided that is excellent in light emission efficiency and stability. The light-emitting device has a first part of a first dielectric constant, a second part of a second dielectric constant and a third part of a third dielectric constant, and has a triple junction where they are in contact with one another. Moreover, a first and a second electrode are provided for applying a voltage for controlling an electric field at the triple junction and in the vicinity thereof. Further, at least one of the first, the second and the third parts is a constituted by light-emitting material, and the triple junction forms a closed line.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: January 6, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tatsuya Iwasaki, Tohru Den, Katsuya Oikawa
  • ELECTRONIC DEVICE CONTAINING CARBON NANOTUBES AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080315745
    Abstract: An electronic device including a pair of electrodes disposed on a substrate and carbon nanotubes electrically connecting the electrodes. A method for manufacturing this device in which the electrodes are disposed on the substrate and the nanotubes are prepared to electrically connect the electrodes.
    Type: Application
    Filed: August 25, 2008
    Publication date: December 25, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tohru Den, Tatsuya Iwasaki
  • COMPOUND SEMICONDUCTOR FILM, LIGHT EMITTING FILM, AND MANUFACTURING METHOD THEREOF
    Publication number: 20080303035
    Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
    Type: Application
    Filed: May 27, 2008
    Publication date: December 11, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tomoyuki Oike, Tatsuya Iwasaki
  • Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
    Patent number: 7453087
    Abstract: A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: November 18, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tatsuya Iwasaki
  • Electronic device containing a carbon nanotube
    Patent number: 7453193
    Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: November 18, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tohru Den, Tatsuya Iwasaki
  • FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080272370
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Application
    Filed: July 3, 2008
    Publication date: November 6, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM
    Publication number: 20080213559
    Abstract: A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less.
    Type: Application
    Filed: February 20, 2008
    Publication date: September 4, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tomoyuki Oike, Tatsuya Iwasaki
  • Field-effect transistor and method for manufacturing the same
    Patent number: 7411209
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: August 12, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20080073653
    Abstract: It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 27, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tatsuya Iwasaki
  • Optoelectronic circuit board with optical waveguide and optical backplane
    Patent number: 7349592
    Abstract: An optical transmission device comprises an optical transmission medium and a plurality of optical receivers, and the optical transmission medium has a linear line waveguide. At least one of the optical receivers is adapted to receive a first optical signal propagated through the line waveguide, while at least one of the optical receivers is adapted to receive a second optical signal propagated through the optical transmission medium.
    Type: Grant
    Filed: April 20, 2004
    Date of Patent: March 25, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tatsuya Iwasaki
  • FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080067508
    Abstract: A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
    Type: Application
    Filed: September 7, 2007
    Publication date: March 20, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ayanori Endo, Ryo Hayashi, Tatsuya Iwasaki
  • Structure having pores, device using the same, and manufacturing methods therefor
    Patent number: 7319069
    Abstract: A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths.
    Type: Grant
    Filed: February 16, 2006
    Date of Patent: January 15, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tohru Den, Tatsuya Iwasaki
  • LIGHT EMITTING DEVICE AND METHOD OF PRODUCING A LIGHT EMITTING DEVICE
    Publication number: 20070216287
    Abstract: To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.
    Type: Application
    Filed: February 21, 2007
    Publication date: September 20, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: NAHO ITAGAKI, TOMOYUKI OIKE, TATSUYA IWASAKI, TORU DEN
  • ELECTRONIC DEVICE CONTAINING A CARBON NANOTUBE
    Publication number: 20070205707
    Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.
    Type: Application
    Filed: November 3, 2006
    Publication date: September 6, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tohru DEN, Tatsuya IWASAKI
  • Process of information transmission in optical circuit device and optical circuit device therefor
    Patent number: 7257282
    Abstract: An information transmission process is disclosed in which information is transmitted between a signal-emitting port for emitting an optical signal and plural signal-receiving ports through a light transmissive medium in an optical circuit device. The process comprises a first step of transmitting a first information from the signal-emitting port by emitting light in a first emission angle range to transmit first information to at least one of the signal-receiving ports, and a second step, after the first step, of transmitting second information from the signal-emitting port by emitting light in a second emission angle range different from the first emission angle range to transmit second information to at least one of the signal-receiving ports.
    Type: Grant
    Filed: December 25, 2003
    Date of Patent: August 14, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tatsuya Iwasaki
  • Method, device and computer program for designing a circuit having electric wires and optical connections
    Patent number: 7248757
    Abstract: A design method and a design device can design an optimal optoelectronic circuit in a relatively short period of time by exploiting the performance of hardware. They have a step of generating a connection list to be carried by electric circuits (electric nets) and a connection list to be carried by optical connections (optical nets), a step of designing the layout of electric circuits and subsequently designing optical connections and a step of evaluating the designs.
    Type: Grant
    Filed: December 14, 2004
    Date of Patent: July 24, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tatsuya Iwasaki
  • LIGHT EMITTING STRUCTURE AND LIGHT EMITTING DEVICE
    Publication number: 20070126351
    Abstract: Provided is a light emitting material in which: a light emitting layer comprising a columnar part of which a cross-sectional shape is column such as cylindrical column, and a light emitting part of which a cross-sectional shape is cone or pyramid; and light generated in the light emitting part is extracted outside through the columnar part. The light emitting material allows light to be efficiently extracted to the outside to improve luminance.
    Type: Application
    Filed: November 29, 2006
    Publication date: June 7, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoshihiro OHASHI, Tomoyuki Oike, Tatsuya Iwasaki
  • TRICLINIC-STRUCTURE COMPOSITE OXIDE CONTAINING ZINC AND TUNGSTEN AND PHOSPHOR
    Publication number: 20070126344
    Abstract: There are provided a composite oxide of triclinic crystal system comprising zinc and tungsten, and a production method thereof. Further, there is provided a light-emitting material comprising the composite oxide of triclinic crystal system comprising zinc and tungsten.
    Type: Application
    Filed: November 29, 2006
    Publication date: June 7, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoshihiro Ohashi, Tomoyuki Oike, Tatsuya Iwasaki
  • Reconfigurable optoelectronic circuit
    Patent number: 7200293
    Abstract: A reconfigurable optoelectronic circuit adapted to alter its internal configuration includes logic circuits, electric connections and optical connections. It comprises a plurality of logic blocks of electronic circuit and an optical circuit interconnecting them and both the internal configuration of each of the logic blocks and the optical interconnections of the logic blocks using the optical circuit are alterable.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: April 3, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tatsuya Iwasaki
  • Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
    Publication number: 20070063211
    Abstract: A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
    Type: Application
    Filed: September 1, 2006
    Publication date: March 22, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tatsuya Iwasaki