Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

Abstract: An optical fiber includes a core that propagates a light that includes a wavelength equal to or larger than 1000 nm and equal to or smaller than 1100 nm. The light propagates in the core at least in an LP01 mode and an LP11 mode. A difference between a propagation constant of the light in the LP01 mode and a propagation constant of the light in the LP11 mode is 1735 rad/m or larger and 4000 rad/m or smaller.

Abstract: A laser device includes: a laser unit that outputs laser light; an output end that launches the laser light; a first fusion splice portion; and a second fusion splice portion. In each of the first fusion splice portion and the second fusion splice portion, two multi-mode fibers are fusion-spliced. Each of the two multi-mode fibers include a core through which the laser light propagates and a cladding that surrounds the core. The first fusion splice portion is disposed closer to the laser unit than is the second fusion splice portion. At least a part of the core in the first fusion splice portion contains a dopant that is the same type as a dopant contained in the cladding in the first fusion splice portion for decreasing a refractive index.

Abstract: A laser device includes: a laser unit that outputs laser light; an output end that launches the laser light; a first fusion splice portion; and a second fusion splice portion. In each of the first fusion splice portion and the second fusion splice portion, two multi-mode fibers are fusion-spliced. Each of the two multi-mode fibers include a core through which the laser light propagates and a cladding that surrounds the core. The first fusion splice portion is disposed closer to the laser unit than is the second fusion splice portion. At least a part of the core in the first fusion splice portion contains a dopant that is the same type as a dopant contained in the cladding in the first fusion splice portion for decreasing a refractive index.

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer contains nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) and has a spin polarization less than 0.71.

Abstract: An image pickup unit includes a brightness aperture configured to determine a brightness of an observation optical system and a light shielding aperture, and the light shielding aperture is configured to block some of predetermined light fluxes that pass through the brightness aperture when a movable lens frame moves toward a telephoto side.

Abstract: An optical fiber includes a core that propagates a light that includes a wavelength equal to or larger than 1000 nm and equal to or smaller than 1100 nm. The light propagates in the core at least in an LP01 mode and an LP11 mode. A difference between a propagation constant of the light in the LP01 mode and a propagation constant of the light in the LP11 mode is 1735 rad/m or larger and 4000 rad/m or smaller.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.

Abstract: An optical fiber includes a core that propagates a light that includes a wavelength of 1060 nm. The light propagates in the core at least in an LP01 mode and an LP11 mode. A difference ?? between a propagation constant of the light in the LP01 mode and a propagation constant of the light in the LP11 mode is 2000 rad/m or smaller. The expression L ? ? ? M 2 - 2 ? 3 ? 7 ? 2 × 1 ? 0 - 6 × ? ? ? + 4 . 8 ? 1 ? 9 × 1 ? 0 - 3 is satisfied, where L is a length, M2 is a beam quality of light, ?M2 is a deterioration amount of the beam quality of light due to propagation in the optical fiber.

Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.

Abstract: A magnetic storage device includes a first and a second stacked body including a first ferromagnetic body and a second ferromagnetic body, respectively. A first magnetoresistive effect element includes the first ferromagnetic body and a third ferromagnetic body with a first nonmagnetic body between the first and third ferromagnetic bodies. A second magnetoresistive effect element includes the first ferromagnetic body and a fourth ferromagnetic body with a second nonmagnetic body between the first and fourth ferromagnetic bodies. A third magnetoresistive effect element includes the second ferromagnetic body and a fifth ferromagnetic body with a third nonmagnetic body between the second and fifth ferromagnetic bodies. A fourth magnetoresistive effect element includes the second ferromagnetic body and a sixth ferromagnetic body with a fourth nonmagnetic body between the second and sixth ferromagnetic bodies. The third and fourth ferromagnetic bodies are between the first and second stacked bodies.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.

Abstract: A magnetic storage device includes a first and a second stacked body including a first ferromagnetic body and a second ferromagnetic body, respectively. A first magnetoresistive effect element includes the first ferromagnetic body and a third ferromagnetic body with a first nonmagnetic body between the first and third ferromagnetic bodies. A second magnetoresistive effect element includes the first ferromagnetic body and a fourth ferromagnetic body with a second nonmagnetic body between the first and fourth ferromagnetic bodies. A third magnetoresistive effect element includes the second ferromagnetic body and a fifth ferromagnetic body with a third nonmagnetic body between the second and fifth ferromagnetic bodies. A fourth magnetoresistive effect element includes the second ferromagnetic body and a sixth ferromagnetic body with a fourth nonmagnetic body between the second and sixth ferromagnetic bodies. The third and fourth ferromagnetic bodies are between the first and second stacked bodies.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer contains nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) and has a spin polarization less than 0.71.

Abstract: An image pickup unit includes a brightness aperture configured to determine a brightness of an observation optical system and a light shielding aperture, and the light shielding aperture is configured to block some of predetermined light fluxes that pass through the brightness aperture when a movable lens frame moves toward a telephoto side.

Abstract: An optical fiber, used in a laser device, propagates light having a wavelength of 1060 nm through a core in at least an LP01 mode and an LP11 mode. A difference between a propagation constant of light in the LP01 mode and a propagation constant of light in the LP11 mode is 1850 rad/m or more and 4000 rad/m or less.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).