Patents by Inventor Tatsuya Kishi

Tatsuya Kishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11101413
    Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: August 24, 2021
    Assignees: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Marino Kishi, Chie Miyamae, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu, Kenta Niki
  • Patent number: 11094743
    Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: August 17, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masayoshi Iwayama, Tatsuya Kishi, Masahiko Nakayama, Toshihiko Nagase, Daisuke Watanabe, Tadashi Kai
  • Patent number: 11074951
    Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer contains nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) and has a spin polarization less than 0.71.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: July 27, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Tatsuya Kishi
  • Patent number: 10983331
    Abstract: An image pickup unit includes a brightness aperture configured to determine a brightness of an observation optical system and a light shielding aperture, and the light shielding aperture is configured to block some of predetermined light fluxes that pass through the brightness aperture when a movable lens frame moves toward a telephoto side.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: April 20, 2021
    Assignee: OLYMPUS CORPORATION
    Inventor: Tatsuya Kishi
  • Publication number: 20210066879
    Abstract: An optical fiber includes a core that propagates a light that includes a wavelength equal to or larger than 1000 nm and equal to or smaller than 1100 nm. The light propagates in the core at least in an LP01 mode and an LP11 mode. A difference between a propagation constant of the light in the LP01 mode and a propagation constant of the light in the LP11 mode is 1735 rad/m or larger and 4000 rad/m or smaller.
    Type: Application
    Filed: December 27, 2018
    Publication date: March 4, 2021
    Applicant: Fujikura Ltd.
    Inventors: Rintaro Kitahara, Tatsuya Kishi
  • Patent number: 10937947
    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: March 2, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masatoshi Yoshikawa, Tatsuya Kishi
  • Publication number: 20210057866
    Abstract: An optical fiber includes a core that propagates a light that includes a wavelength of 1060 nm. The light propagates in the core at least in an LP01 mode and an LP11 mode. A difference ?? between a propagation constant of the light in the LP01 mode and a propagation constant of the light in the LP11 mode is 2000 rad/m or smaller. The expression L ? ? ? M 2 - 2 ? 3 ? 7 ? 2 × 1 ? 0 - 6 × ? ? ? + 4 . 8 ? 1 ? 9 × 1 ? 0 - 3 is satisfied, where L is a length, M2 is a beam quality of light, ?M2 is a deterioration amount of the beam quality of light due to propagation in the optical fiber.
    Type: Application
    Filed: December 27, 2018
    Publication date: February 25, 2021
    Applicant: Fujikura Ltd.
    Inventors: Rintaro Kitahara, Tatsuya Kishi
  • Patent number: 10910032
    Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: February 2, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Tatsuya Kishi, Tsuneo Inaba, Daisuke Watanabe, Masahiko Nakayama, Nobuyuki Ogata, Masaru Toko, Hisanori Aikawa, Jyunichi Ozeki, Toshihiko Nagase, Young Min Eeh, Kazuya Sawada
  • Patent number: 10867650
    Abstract: A magnetic storage device includes a first and a second stacked body including a first ferromagnetic body and a second ferromagnetic body, respectively. A first magnetoresistive effect element includes the first ferromagnetic body and a third ferromagnetic body with a first nonmagnetic body between the first and third ferromagnetic bodies. A second magnetoresistive effect element includes the first ferromagnetic body and a fourth ferromagnetic body with a second nonmagnetic body between the first and fourth ferromagnetic bodies. A third magnetoresistive effect element includes the second ferromagnetic body and a fifth ferromagnetic body with a third nonmagnetic body between the second and fifth ferromagnetic bodies. A fourth magnetoresistive effect element includes the second ferromagnetic body and a sixth ferromagnetic body with a fourth nonmagnetic body between the second and sixth ferromagnetic bodies. The third and fourth ferromagnetic bodies are between the first and second stacked bodies.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: December 15, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hisanori Aikawa, Tatsuya Kishi
  • Publication number: 20200302985
    Abstract: A magnetic storage device includes a first and a second stacked body including a first ferromagnetic body and a second ferromagnetic body, respectively. A first magnetoresistive effect element includes the first ferromagnetic body and a third ferromagnetic body with a first nonmagnetic body between the first and third ferromagnetic bodies. A second magnetoresistive effect element includes the first ferromagnetic body and a fourth ferromagnetic body with a second nonmagnetic body between the first and fourth ferromagnetic bodies. A third magnetoresistive effect element includes the second ferromagnetic body and a fifth ferromagnetic body with a third nonmagnetic body between the second and fifth ferromagnetic bodies. A fourth magnetoresistive effect element includes the second ferromagnetic body and a sixth ferromagnetic body with a fourth nonmagnetic body between the second and sixth ferromagnetic bodies. The third and fourth ferromagnetic bodies are between the first and second stacked bodies.
    Type: Application
    Filed: September 3, 2019
    Publication date: September 24, 2020
    Inventors: Hisanori AIKAWA, Tatsuya KISHI
  • Publication number: 20200303625
    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.
    Type: Application
    Filed: September 9, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masatoshi YOSHIKAWA, Tatsuya KISHI
  • Publication number: 20200302988
    Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer contains nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) and has a spin polarization less than 0.71.
    Type: Application
    Filed: September 11, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventor: Tatsuya KISHI
  • Publication number: 20200201023
    Abstract: An image pickup unit includes a brightness aperture configured to determine a brightness of an observation optical system and a light shielding aperture, and the light shielding aperture is configured to block some of predetermined light fluxes that pass through the brightness aperture when a movable lens frame moves toward a telephoto side.
    Type: Application
    Filed: January 9, 2020
    Publication date: June 25, 2020
    Applicant: OLYMPUS CORPORATION
    Inventor: Tatsuya KISHI
  • Patent number: 10622545
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: April 14, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masaru Toko, Keiji Hosotani, Hisanori Aikawa, Tatsuya Kishi
  • Patent number: 10620368
    Abstract: An optical fiber, used in a laser device, propagates light having a wavelength of 1060 nm through a core in at least an LP01 mode and an LP11 mode. A difference between a propagation constant of light in the LP01 mode and a propagation constant of light in the LP11 mode is 1850 rad/m or more and 4000 rad/m or less.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: April 14, 2020
    Assignee: Fujikura Ltd.
    Inventors: Tatsuya Kishi, Rintaro Kitahara
  • Publication number: 20200091227
    Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
    Type: Application
    Filed: March 14, 2019
    Publication date: March 19, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masayoshi IWAYAMA, Tatsuya KISHI, Masahiko NAKAYAMA, Toshihiko NAGASE, Daisuke WATANABE, Tadashi KAI
  • Patent number: 10573802
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from ?1 kOe to +1 kOe.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: February 25, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Tatsuya Kishi, Youngmin Eeh, Kazuya Sawada, Masaru Toko
  • Patent number: 10446739
    Abstract: According to one embodiment, a semiconductor memory device includes the following configuration. A resistance change element has first, second and third magnetic layers and a non-magnetic layer disposed between the first and second magnetic layers, and a metal layer disposed between the second and third magnetic layers. An SAF structure is comprised of the second magnetic layer, the metal layer and the third magnetic layer. A write circuit applies a first voltage and a second voltage having reversed polarity of the first voltage to the resistance change element in a write operation in which the resistance change element is changed from a low-resistance state to a high-resistance state.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: October 15, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Tsuneo Inaba, Tatsuya Kishi, Masahiko Nakayama
  • Publication number: 20190310416
    Abstract: An optical fiber, used in a laser device, propagates light having a wavelength of 1060 nm through a core in at least an LP01 mode and an LP11 mode. A difference between a propagation constant of light in the LP01 mode and a propagation constant of light in the LP11 mode is 1850 rad/m or more and 4000 rad/m or less.
    Type: Application
    Filed: May 12, 2017
    Publication date: October 10, 2019
    Applicant: FUJIKURA LTD.
    Inventors: Tatsuya Kishi, Rintaro Kitahara
  • Publication number: 20190288184
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from ?1 kOe to +1 kOe.
    Type: Application
    Filed: September 12, 2018
    Publication date: September 19, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Tatsuya KISHI, Youngmin EEH, Kazuya SAWADA, Masaru TOKO