Abstract: According to one embodiment, an electromagnet includes a first electromagnet coil having a first portion and a second portion. The first portion of the first electromagnet coil extends in a direction in parallel with a first plane. The second portion of the first electromagnet coil extends in a direction in parallel with a second plane. The first and second planes intersect at a predetermined angle.

Abstract: According to one embodiment, the magnetic memory device includes a first magnetoresistive element and a second magnetoresistive element which are adjacent to each other. Each of the first and second magnetoresistive elements includes a first magnetic layer, a first non-magnetic later on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer. Furthermore, the magnetic memory device further includes a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements.

Abstract: An optical fiber including a core and a cladding including an inner cladding layer and an outer cladding layer is provided. The refractive index of the core ?1, the refractive index of the inner cladding layer ?2, and the refractive index of the outer cladding layer ?3 have a relationship denoted by the following expressions: ?1max>?2min and ?1max>?3, and 0.01%<|?2min??3|<0.03%. An outer circumference radius r1 of the core, an outer circumferential radius r2 of the inner cladding layer, and an outer circumferential radius r3 of the outer cladding layer have a relationship denoted by the following expressions: r1<r2<r3, and 0.2?r1/r2?0.5. A cable cut-off wavelength ?cc 1260 nm or less. A mode field diameter at a wavelength of 1310 nm is 8.6 ?m or more and 9.5 ?m or less.

Abstract: According to one embodiment, the magnetic memory device includes a first magnetoresistive element and a second magnetoresistive element which are adjacent to each other. Each of the first and second magnetoresistive elements includes a first magnetic layer, a first non-magnetic later on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer. Furthermore, the magnetic memory device further includes a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements.

Abstract: According to one embodiment, a magnetic storage device includes a first and a second magnetoresistive effect element, which are disposed in an arrangement pattern including a plurality of arrangement areas, and in each of which a second ferromagnetic layer and a third ferromagnetic layer are antiferromagnetically coupled. A magnetization orientation of the third ferromagnetic layer of the first magnetoresistive effect element is antiparallel to a magnetization orientation of the third ferromagnetic layer of the second magnetoresistive effect element. The first magnetoresistive effect element is disposed in an arrangement area randomly positioned with respect to an arrangement area in which the second magnetoresistive effect element is disposed.

Abstract: A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Abstract: An optical fiber includes a core, and a clad surrounding an outer circumference of the core, in which a first relative refractive index difference ?1a is greater than 0, a second relative refractive index difference ?1b is greater than 0, the first relative refractive index difference ?1a is greater than the second relative refractive index difference ?1b, the first relative refractive index difference ?1a and the second relative refractive index difference ?1b satisfy a relationship denoted by the following expression: 0.20?(?1a??1b)/?1a?0.88, and a refractive index profile ? of the core in an entire region of a section of 0?r?r1 as a function ?(r) of a distance r from a center of the core in the radial direction is denoted by the following expression: ?(r)=?1a?(?1a??1b)r/r1.

Abstract: Provided is an optical coupler configured to cause an NA of light, which exits a taper fiber, to be smaller as compared with a conventional optical coupler. A taper fiber has a high refractive index part which is provided inside a core of the taper fiber and which has a refractive index smaller than a refractive index ncore of the core. An exit end surface of each GI fiber is bonded to an entrance end surface of the taper fiber so that at least a part of the exit end surface of the each GI fiber overlaps with a section of the high refractive index part. A relative refractive index difference of the taper fiber is smaller than 0.076%.

Abstract: An optical fiber including a core and a cladding including an inner cladding layer and an outer cladding layer is provided. The refractive index of the core ?1, the refractive index of the inner cladding layer ?2, and the refractive index of the outer cladding layer ?3 have a relationship denoted by the following expressions: ?1max>?2min and ?1max>?3, and 0.01%<|?2min??3|<0.03%. An outer circumference radius r1 of the core, an outer circumferential radius r2 of the inner cladding layer, and an outer circumferential radius r3 of the outer cladding layer have a relationship denoted by the following expressions: r1<r2<r3, and 0.2?r1/r2?0.5. A cable cut-off wavelength ?cc 1260 nm or less. A mode field diameter at a wavelength of 1310 nm is 8.6 ?m or more and 9.5 ?m or less.

Abstract: According to one embodiment, a tester includes a magnetic shield portion having a space which is shielded from an external magnetic field, a controller generating a test signal for testing a magnetic memory having a magnetoresistive element provided in the space, an interface portion in the space, the interface portion which functions as an interface between the controller and the magnetic memory, and a magnetic field generating portion in the space, the magnetic field generating portion generating a test magnetic field while the magnetic memory is tested by the test signal.

Abstract: According to one embodiment, a testing method of a memory device includes annealing the memory device, the memory device including a memory element; performing, after the annealing, to the memory element a process which sets a first magnetization orientation of a first ferromagnetic layer to be antiparallel to a second magnetization orientation of the second ferromagnetic layer; reading, after the performing of the process, data from the memory element; and determining the memory element as defective due to the second magnetization orientation being parallel to a third magnetization orientation of a third ferromagnetic layer, when data represented by the first magnetization orientation being antiparallel to the second magnetization orientation differs from the read data.

Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

Abstract: According to one embodiment, a test apparatus includes an interface portion to which a magnetic memory with a memory cell array is connected, the memory cell array including a center area and a peripheral area, the center area being located inside an edge of the memory cell array by a predetermined value, and a controller controlling a test of the magnetic memory. The controller is configured to execute the test for one of the peripheral area and the center area base on a kind of the test.

Abstract: According to an embodiment, an authentication device includes an acquiring unit, a predicting unit, and an authenticating unit. The acquiring unit is configured to acquire performance information of a first device that is a device to be authenticated. The predicting unit is configured to predict performance information of a second device that is a device being a reference for authentication according to a change with time from initial performance information. The authenticating unit is configured to perform an authentication process of determining whether or not the first device falls into the second device on a basis of a degree of agreement between the performance information acquired by the acquiring unit and the performance information predicted by the predicting unit.

Abstract: An optical fiber includes a core, and a clad surrounding an outer circumference of the core, in which a first relative refractive index difference ?1a is greater than 0, a second relative refractive index difference ?1b is greater than 0, the first relative refractive index difference ?1a is greater than the second relative refractive index difference ?1b, the first relative refractive index difference ?1a and the second relative refractive index difference ?1b satisfy a relationship denoted by the following expression: 0.20?(?1a??1b)/?1a?0.88, and a refractive index profile A of the core in an entire region of a section of 0?r?r1 as a function ?(r) of a distance r from a center of the core in the radial direction is denoted by the following expression: ?(r)=?1a?(?1a??1b)r/r1.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.

Abstract: According to one embodiment, an electromagnet includes a first electromagnet coil having a first portion and a second portion. The first portion of the first electromagnet coil extends in a direction in parallel with a first plane. The second portion of the first electromagnet coil extends in a direction in parallel with a second plane. The first and second planes intersect at a predetermined angle.

Abstract: According to one embodiment, a magnetic memory includes a memory cell array including magnetoresistive elements, a heater and a temperature sensor provided in the memory cell array, a heater driver which drives the heater, a temperature detector which detects a first temperature sensed by the temperature sensor, and a control circuit which controls the heater driver based on the first temperature.

Abstract: According to one embodiment, a semiconductor memory device comprises a memory cell array. The memory cell array has a plurality of magnetic tunnel junction (MTJ) elements. Each of the MTJ elements has a first magnetic layer, a second magnetic layer and a non-magnetic layer therebetween, and a hard mask layer is arranged above the second magnetic layer. The plurality of MTJ elements have a first MTJ element having a first hard mask layer and a second MTJ element having a second hard mask layer, and a dimension of, the first hard mask layer is greater than that of the second hard mask layer.