Patents by Inventor Tatsuya Kunisato
Tatsuya Kunisato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10297516Abstract: A semiconductor device includes a semiconductor element, a base, and an outer packaging resin. The base has a mounting surface, on which the semiconductor element is mounted, and a groove provided around the semiconductor element on the mounting surface. An outer packaging resin covers the semiconductor element and the base, and is fixed to the base by filling the groove. A bottom of the groove includes a first recess-projection having a first amplitude and a first repetition interval along an extending direction of the groove. The first recess-projection includes a second recess-projection having a second amplitude smaller than the first amplitude and a second repetition interval shorter than the first repetition interval along the extending direction of the groove.Type: GrantFiled: March 1, 2017Date of Patent: May 21, 2019Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Masayuki Nagamatsu, Shinya Marumo, Junichi Kimura, Tatsuya Kunisato, Ryosuke Usui
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Publication number: 20180197802Abstract: A semiconductor device includes a semiconductor element, a base, and an outer packaging resin. The base has a mounting surface, on which the semiconductor element is mounted, and a groove provided around the semiconductor element on the mounting surface. An outer packaging resin covers the semiconductor element and the base, and is fixed to the base by filling the groove. A bottom of the groove includes a first recess-projection having a first amplitude and a first repetition interval along an extending direction of the groove. The first recess-projection includes a second recess-projection having a second amplitude smaller than the first amplitude and a second repetition interval shorter than the first repetition interval along the extending direction of the groove.Type: ApplicationFiled: March 1, 2017Publication date: July 12, 2018Inventors: MASAYUKI NAGAMATSU, SHINYA MARUMO, JUNICHI KIMURA, TATSUYA KUNISATO, RYOSUKE USUI
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Publication number: 20160308072Abstract: A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface of the semiconductor substrate, a guard ring region having a second conductivity type and disposed within the silicon carbide semiconductor layer, a floating region having the second conductivity type and disposed within the silicon carbide semiconductor layer, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface of the semiconductor substrate, wherein the guard ring region and the floating region each include a pair of a high-concentration region having the second conductivity type and a low-concentration region having the second conductivity type.Type: ApplicationFiled: April 1, 2016Publication date: October 20, 2016Inventors: MASAO UCHIDA, KOUICHI SAITOU, TAKAYUKI WAKAYAMA, MASASHI HAYASHI, TATSUYA KUNISATO
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Patent number: 7968897Abstract: A light-emitting device capable of improving light extraction efficiency is provided. This light-emitting device comprises a support substrate set on a side opposite to a light emission surface and a semiconductor element layer, bonded to the support substrate, having a side surface inclined by a prescribed angle with respect to at least the normal of the light emission surface.Type: GrantFiled: February 17, 2005Date of Patent: June 28, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tatsuya Kunisato
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Patent number: 7892874Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: June 30, 2009Date of Patent: February 22, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7829900Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.Type: GrantFiled: February 28, 2008Date of Patent: November 9, 2010Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
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Patent number: 7768204Abstract: Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.Type: GrantFiled: February 26, 2007Date of Patent: August 3, 2010Assignee: Sanyo Electric Co., Ltd.Inventors: Seiichi Tokunaga, Tatsuya Kunisato, Takenori Goto, Masayuki Hata
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Patent number: 7750551Abstract: A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.Type: GrantFiled: September 21, 2006Date of Patent: July 6, 2010Assignee: Sanyo Electric Co., Ltd.Inventors: Shingo Kameyama, Takenori Goto, Tatsuya Kunisato
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Publication number: 20090263925Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: ApplicationFiled: June 30, 2009Publication date: October 22, 2009Applicant: SANYO ELECTRIC CO., LTDInventors: Tatsuya KUNISATO, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7592630Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: February 2, 2005Date of Patent: September 22, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7488613Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: October 16, 2007Date of Patent: February 10, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20080248603Abstract: A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer.Type: ApplicationFiled: June 10, 2008Publication date: October 9, 2008Applicant: SANYO ELECTRIC CO., LTD.Inventors: Tatsuya Kunisato, Hiroki Ohbo, Nobuhiko Hayashi, Takashi Kano
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Publication number: 20080224151Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.Type: ApplicationFiled: February 28, 2008Publication date: September 18, 2008Applicant: SANYO ELECTRIC CO., LTD.Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
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Patent number: 7355208Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.Type: GrantFiled: August 3, 2005Date of Patent: April 8, 2008Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
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Publication number: 20080064130Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: ApplicationFiled: October 16, 2007Publication date: March 13, 2008Applicant: SANYO ELECTRIC CO., LTD.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7312480Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.Type: GrantFiled: July 7, 2005Date of Patent: December 25, 2007Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tatsuya Kunisato, Kouji Tominaga, Yasuhiko Matsushita
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Patent number: 7279344Abstract: A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.Type: GrantFiled: September 11, 2006Date of Patent: October 9, 2007Assignee: Sanyo Electric Co., Ltd.Inventors: Nobuhiko Hayashi, Tatsuya Kunisato, Hiroki Ohbo, Tsutomu Yamaguchi
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Publication number: 20070228923Abstract: Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.Type: ApplicationFiled: February 26, 2007Publication date: October 4, 2007Applicant: Sanyo Electric Co., Ltd.Inventors: Seiichi Tokunaga, Tatsuya Kunisato, Takenori Goto, Masayuki Hata
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Publication number: 20070205426Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element and a lead-out electrode. The semiconductor light-emitting element has a light-emitting surface of polygonal shape and an electrode formed on the light-emitting surface. The lead-out electrode is connected to the electrode. In the semiconductor light-emitting device, the electrode is formed along at least two sides of the light-emitting surface. In addition, the lead-out electrode is formed on the electrode, and includes an opening portion which opens toward an upper side of the light-emitting surface.Type: ApplicationFiled: January 30, 2007Publication date: September 6, 2007Applicant: Sanyo Electronic Co., Ltd.Inventors: Kyoji Inoshita, Yasumitsu Kunoh, Saburo Nakashima, Tatsuya Kunisato, Takenori Goto, Masayuki Hata
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Patent number: RE42074Abstract: A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.Type: GrantFiled: December 18, 2002Date of Patent: January 25, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Takashi Kano, Yasuhiro Ueda, Yasuhiko Matsushita, Katsumi Yagi