Patents by Inventor Tatsuya Kunisato
Tatsuya Kunisato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070069633Abstract: A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.Type: ApplicationFiled: September 21, 2006Publication date: March 29, 2007Applicant: Sanyo Electric Co., Ltd.Inventors: Shingo Kameyama, Takenori Goto, Tatsuya Kunisato
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Publication number: 20070001192Abstract: A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region.Type: ApplicationFiled: September 11, 2006Publication date: January 4, 2007Applicant: SANYO ELECTRIC CO., LTDInventors: Nobuhiko Hayashi, Tatsuya Kunisato, Hiroki Ohbo, Tsutomu Yamaguchi
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Patent number: 7154123Abstract: A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.Type: GrantFiled: February 18, 2005Date of Patent: December 26, 2006Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7109530Abstract: A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing extended etching. The nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. During laterally growth, strain is relaxed thereby improving crystallinity. The underlayer is formed in a substantially flat shape, thereby avoiding extended etching.Type: GrantFiled: March 10, 2004Date of Patent: September 19, 2006Assignee: Sanyo Electric Co., Ltd.Inventors: Nobuhiko Hayashi, Tatsuya Kunisato, Hiroki Ohbo, Tsutomu Yamaguchi
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Patent number: 6994751Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.Type: GrantFiled: February 25, 2002Date of Patent: February 7, 2006Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
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Publication number: 20060017073Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.Type: ApplicationFiled: July 7, 2005Publication date: January 26, 2006Applicants: SANYO ELECTRIC CO., LTD., TOTTORI SANYO ELECTRIC CO., LTD.Inventors: Masayuki Hata, Tatsuya Kunisato, Kouji Tominaga, Yasuhiko Matsushita
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Publication number: 20050263778Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.Type: ApplicationFiled: August 3, 2005Publication date: December 1, 2005Applicant: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
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Publication number: 20050199891Abstract: A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.Type: ApplicationFiled: February 18, 2005Publication date: September 15, 2005Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20050199885Abstract: A light-emitting device capable of improving light extraction efficiency is provided. This light-emitting device comprises a support substrate set on a side opposite to a light emission surface and a semiconductor element layer, bonded to the support substrate, having a side surface inclined by a prescribed angle with respect to at least the normal of the light emission surface.Type: ApplicationFiled: February 17, 2005Publication date: September 15, 2005Inventors: Masayuki Hata, Tatsuya Kunisato
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Publication number: 20050173725Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: ApplicationFiled: February 2, 2005Publication date: August 11, 2005Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 6928096Abstract: A nitride-based semiconductor laser device capable of preventing deterioration in the vicinity of a facet is obtained. This nitride-based semiconductor laser device comprises a first conductivity type first cladding layer consisting of a nitride-based semiconductor formed on a substrate, an active layer formed on the first cladding layer, a second conductivity type second cladding layer consisting of a nitride-based semiconductor formed on the active layer and a high-resistance region formed at least portions of the active layer and the second cladding layer in the vicinity of the facet. The high-resistance region has higher resistance than the remaining regions, whereby a current hardly flows to the high-resistance region. Thus, temperature increase is suppressed in the vicinity of the facet, whereby deterioration can be prevented in the vicinity of the facet.Type: GrantFiled: April 3, 2002Date of Patent: August 9, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Yasuhiko Nomura, Tatsuya Kunisato
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Publication number: 20050141240Abstract: A pre-curing viscous solution (precursor solution) is applied to the back surface of a substrate for forming an optically transparent layer principally composed of an inorganic material. The substrate is heated or irradiated with UV light while being pressed with unevenness of a mold. By removing the substrate from the mold, the optically transparent, inorganic material layer principally composed of the inorganic material is formed on the substrate. In this manner, the inorganic material layer with the unevenness is formed on the back surface of the substrate (a light extraction surface) by embossing.Type: ApplicationFiled: September 30, 2004Publication date: June 30, 2005Inventors: Masayuki Hata, Ryoji Hiroyama, Tatsuya Kunisato, Keiichi Kuramoto, Hitoshi Hirano
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Publication number: 20040169193Abstract: A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region.Type: ApplicationFiled: March 10, 2004Publication date: September 2, 2004Applicant: SANYO ELECTRIC CO., LTDInventors: Nobuhiko Hayashi, Tatsuya Kunisato, Hiroki Ohbo, Tsutomu Yamaguchi
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Patent number: 6759139Abstract: A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.Type: GrantFiled: February 25, 2002Date of Patent: July 6, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Nobuhiko Hayashi, Hiroki Ohbo, Masayuki Hata, Tsutomu Yamaguchi
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Patent number: 6734503Abstract: A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.Type: GrantFiled: August 5, 2002Date of Patent: May 11, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Nobuhiko Hayashi, Koji Tominaga, Yasuhiko Nomura, Tatsuya Kunisato, Hiroki Ohbo
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Patent number: 6720196Abstract: A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The number of dislocations is reduced by a single lateral growth and is further reduced due to a dislocation loop effect by the quantum dots, without repeating lateral growth.Type: GrantFiled: May 6, 2002Date of Patent: April 13, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Yasuhiko Nomura, Takashi Kano, Hiroki Ohbo, Masayuki Hata
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Patent number: 6713845Abstract: A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region.Type: GrantFiled: February 28, 2002Date of Patent: March 30, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Nobuhiko Hayashi, Tatsuya Kunisato, Hiroki Ohbo, Tsutomu Yamaguchi
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Publication number: 20030057434Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.Type: ApplicationFiled: October 22, 1999Publication date: March 27, 2003Inventors: MASAYUKI HATA, TATSUYA KUNISATO, KOUJI TOMINAGA, YASUHIKO MATSUSHITA
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Publication number: 20030030068Abstract: A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.Type: ApplicationFiled: August 5, 2002Publication date: February 13, 2003Applicant: Sanyo Electric Co., Ltd.Inventors: Masayuki Hata, Nobuhiko Hayashi, Koji Tominaga, Yasuhiko Nomura, Tatsuya Kunisato, Hiroki Ohbo
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Publication number: 20020167028Abstract: A method of forming a nitride-based semiconductor capable of forming a nitride-based semiconductor layer having low dislocation density with a small thickness is obtained. This method of forming a nitride-based semiconductor comprises steps of laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. Thus, the number of dislocations reduced by lateral growth is further reduced due to a dislocation loop effect by the quantum dots. Therefore, a nitride-based semiconductor having lower dislocation density is formed as compared with a case of reducing the number of dislocations only by lateral growth.Type: ApplicationFiled: May 6, 2002Publication date: November 14, 2002Applicant: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Yasuhiko Nomura, Takashi Kano, Hiroki Ohbo, Masayuki Hata