Abstract: A display device includes a backlight, a display element, a plate for holding at least a portion of an emission surface, from which an image light is emitted, provided on the display element, and a heat dissipation portion that dissipates heat generated from the display element. The display element is connected to the heat dissipation portion via the plate.

Abstract: A low surface-roughness part is formed at a first tapered part, and, as a result, the roughness of an opening-edge of a groove part of an internal spline part that opens at the first tapered part is reduced, and surface pressure applied by the opening edge to a tooth of an external spline part can be reduced. As a result, the opening edge of the groove part of the internal spline part can be kept from digging into the tooth, and variation, between products, in the insertion load of a second shaft part can be suppressed.

Abstract: A method for manufacturing a thermoelectric conversion element includes forming a thermoelectric film containing a thermoelectric material on a surface of a substrate, pressing the thermoelectric film with a mold to form a pattern of the thermoelectric film on the surface of the substrate, and heating the pattern of the thermoelectric film formed on the surface of the substrate to generate the thermoelectric conversion element.

Abstract: This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

Abstract: According to the present invention, a low surface-roughness part (114a) is formed at a first tapered part (114), and, as a result, the roughness of an opening-edge of a groove part (113a) of an internal spline part (113) that opens at the first tapered part (114) is reduced, and surface pressure applied by the opening edge to a tooth (123b) of an external spline part (123) can be reduced. As a result, the opening edge of the groove part (113a) of the internal spline part (113) can be kept from digging into the tooth (123b), and variation, between products, in the insertion load of a second shaft part (12) can be suppressed.

Abstract: A low surface-roughness part is formed at a first tapered part, as a result, the roughness of an opening-edge of a groove part of an internal spline part that opens at the first tapered part is reduced, and surface pressure applied by the opening edge to a tooth of an external spline part can be reduced. As a result, the opening edge of the groove part of the internal spline part can be kept from digging into the tooth, and variation, between products, in the insertion load of a second shaft part can be suppressed.

Abstract: The etching mask 80 for screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel 44) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching mask 80 including aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel 44) which is not protected by the etching mask 80; and a heating step of, after the contact step, heating the oxide layer (the channel 44) and the etching mask 80 to or above a temperature at which the etching mask 80 is decomposed.

Abstract: A method for manufacturing a thermoelectric conversion element includes forming a thermoelectric film containing a thermoelectric material on a surface of a substrate, pressing the thermoelectric film with a mold to form a pattern of the thermoelectric film on the surface of the substrate, and heating the pattern of the thermoelectric film formed on the surface of the substrate to generate the thermoelectric conversion element.

Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Abstract: A laminate by using a paste or solution containing aliphatic polycarbonates having an etching mask function is provided. A method of producing a laminate of the present invention includes a pattern forming step of forming a pattern 80 of a first oxide precursor layer in which a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates on an oxide layer 44 or on the second oxide precursor layer to be oxidized into the oxide layer 44; an etching step of, after the pattern forming step, etching the oxide layer 44 or the second oxide precursor layer that is not protected by the pattern 80; and a heating step of, after the etching step, heating the oxide layer 44 or the second oxide precursor layer, and the first oxide precursor layer to a temperature at which the binder is decomposed or higher.

Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.

Abstract: [Problem] Provided is a composite member which can contribute to simple formation and/or increased quality of fine wiring. [Solution] A composite member 100 according to one embodiment of the present invention includes a base material, an aliphatic polycarbonate-containing layer with multiple island-shaped portions arranged on the base material, and a metal ink, wherein at least a surface of the aliphatic polycarbonate-containing layer with multiple island-shaped portions has a contact angle of 50° or more between pure water and the surface when exposed to ultraviolet light including a wavelength of 180 nm or more and 370 nm or less for 15 minutes, and the metal ink is arranged on the base material at at least a portion of a region sandwiched by the precursor layers.

Abstract: According to the present invention, a low surface-roughness part (114a) is formed at a first tapered part (114), and, as a result, the roughness of an opening-edge of a groove part (113a) of an internal spline part (113) that opens at the first tapered part (114) is reduced, and surface pressure applied by the opening edge to a tooth (123b) of an external spline part (123) can be reduced. As a result, the opening edge of the groove part (113a) of the internal spline part (113) can be kept from digging into the tooth (123b), and variation, between products, in the insertion load of a second shaft part (12) can be suppressed.

Abstract: The etching mask 80 for screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel 44) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching mask 80 including aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel 44) which is not protected by the etching mask 80; and a heating step of, after the contact step, heating the oxide layer (the channel 44) and the etching mask 80 to or above a temperature at which the etching mask 80 is decomposed.

Abstract: Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).

Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Abstract: There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a ?-BiNbO4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.

Abstract: An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Lix-3y-z, Ey, Hz)L?M?O?; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2?=32.3°±0.5°, 37.6°±0.5°, 43.8°±0.5°, and 57.7°±0.5° in a XRD spectrum obtained by XRD measurement using CuK? irradiation.

Abstract: The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.

Abstract: An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.