Patents by Inventor Tatsuya Shimoda

Tatsuya Shimoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10784120
    Abstract: A laminate by using a paste or solution containing aliphatic polycarbonates having an etching mask function is provided. A method of producing a laminate of the present invention includes a pattern forming step of forming a pattern 80 of a first oxide precursor layer in which a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates on an oxide layer 44 or on the second oxide precursor layer to be oxidized into the oxide layer 44; an etching step of, after the pattern forming step, etching the oxide layer 44 or the second oxide precursor layer that is not protected by the pattern 80; and a heating step of, after the etching step, heating the oxide layer 44 or the second oxide precursor layer, and the first oxide precursor layer to a temperature at which the binder is decomposed or higher.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: September 22, 2020
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.
    Inventors: Satoshi Inoue, Tatsuya Shimoda, Kazuhiro Fukada, Kiyoshi Nishioka
  • Patent number: 10749034
    Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: August 18, 2020
    Assignees: Japan Advanced Institute of Science and Technology, Sumitomo Seika Chemicals Co., Ltd.
    Inventors: Satoshi Inoue, Tatsuya Shimoda, Nobutaka Fujimoto, Kiyoshi Nishioka, Shuichi Karashima
  • Patent number: 10634996
    Abstract: [Problem] Provided is a composite member which can contribute to simple formation and/or increased quality of fine wiring. [Solution] A composite member 100 according to one embodiment of the present invention includes a base material, an aliphatic polycarbonate-containing layer with multiple island-shaped portions arranged on the base material, and a metal ink, wherein at least a surface of the aliphatic polycarbonate-containing layer with multiple island-shaped portions has a contact angle of 50° or more between pure water and the surface when exposed to ultraviolet light including a wavelength of 180 nm or more and 370 nm or less for 15 minutes, and the metal ink is arranged on the base material at at least a portion of a region sandwiched by the precursor layers.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: April 28, 2020
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.
    Inventors: Satoshi Inoue, Tatsuya Shimoda, Kazuhiro Fukada, Kiyoshi Nishioka, Masahiro Suzuki
  • Patent number: 10608981
    Abstract: A name identification device includes a generation unit configured to generate graph information in which each node represents one of names and IP addresses included in A records and CNAME records included in a DNS response observed in a network, and each edge represents a correspondence relationship between one and another of the names and the IP addresses in the A records and the CNAME records, and to associate the generated graph information with a client corresponding to the DNS response; and an identifying unit configured to identify a name related to a leaf node that is reachable from a node corresponding to the IP address of a server by tracing the edges in the graph information having been associated with the client, for a packet between the client and the server that is observed in the network.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: March 31, 2020
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Takeru Inoue, Keisuke Ishibashi, Akihiro Shimoda, Kazumichi Sato, Tatsuya Mori, Shigeki Goto
  • Publication number: 20200040946
    Abstract: According to the present invention, a low surface-roughness part (114a) is formed at a first tapered part (114), and, as a result, the roughness of an opening-edge of a groove part (113a) of an internal spline part (113) that opens at the first tapered part (114) is reduced, and surface pressure applied by the opening edge to a tooth (123b) of an external spline part (123) can be reduced. As a result, the opening edge of the groove part (113a) of the internal spline part (113) can be kept from digging into the tooth (123b), and variation, between products, in the insertion load of a second shaft part (12) can be suppressed.
    Type: Application
    Filed: September 14, 2017
    Publication date: February 6, 2020
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Yasushi AKITA, Kazuhisa YOKOYAMA, Kenichiro ISHIKURA, Tatsuya SHIMODA
  • Publication number: 20200027743
    Abstract: The etching mask 80 for screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel 44) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching mask 80 including aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel 44) which is not protected by the etching mask 80; and a heating step of, after the contact step, heating the oxide layer (the channel 44) and the etching mask 80 to or above a temperature at which the etching mask 80 is decomposed.
    Type: Application
    Filed: September 27, 2019
    Publication date: January 23, 2020
    Inventors: Satoshi INOUE, Tatsuya SHIMODA, Kazuhiro FUKADA, Kiyoshi NISHIOKA, Nobutaka FUJIMOTO, Masahiro SUZUKI
  • Patent number: 10529531
    Abstract: Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: January 7, 2020
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Chuhei Oshima, Masahiko Tomitori, Anto Yasaka, Tatsuya Shimoda
  • Publication number: 20190386151
    Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.
    Type: Application
    Filed: August 23, 2019
    Publication date: December 19, 2019
    Inventors: Tatsuya SHIMODA, Satoshi INOUE, Tue Trong PHAN, Takaaki MIYASAKO, Jinwang Li
  • Patent number: 10511500
    Abstract: An estimation device is provided that measures a number of DNS requests for each of a plurality of domain names and for each IP address in observed flows. The device measures a total number of the flows, and total amounts of data, estimates a relationship between the amount of data for each IP address corresponding to a node, and the number of DNS requests for each domain name corresponding to a non-intermediate node; and based on a value obtained by multiplying the number of requests for each domain name by the amount of data for each flow of each domain name, obtains the amount of data for each flow of each domain name, multiplies the amount of data by the number of the DNS requests for each domain name, so as to calculate an estimate of the amount of data for each domain name.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: December 17, 2019
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Akihiro Shimoda, Keisuke Ishibashi, Takeru Inoue, Kazumichi Sato, Tatsuya Mori, Shigeki Goto
  • Patent number: 10475580
    Abstract: There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a ?-BiNbO4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: November 12, 2019
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, ADAMANT NAMIKI PRECISION JEWEL CO., LTD.
    Inventors: Tatsuya Shimoda, Satoshi Inoue, Tomoki Ariga
  • Patent number: 10461337
    Abstract: An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Lix-3y-z, Ey, Hz)L?M?O?; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2?=32.3°±0.5°, 37.6°±0.5°, 43.8°±0.5°, and 57.7°±0.5° in a XRD spectrum obtained by XRD measurement using CuK? irradiation.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: October 29, 2019
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Tatsuya Shimoda, Takashi Masuda, Toshiya Saito, Shingo Ohta
  • Patent number: 10431731
    Abstract: The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: October 1, 2019
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuki Tagashira, Reijiro Shimura, Yuzuru Takamura, Jinwang Li, Tatsuya Shimoda, Toshiaki Watanabe, Nobuyuki Soyama
  • Patent number: 10400336
    Abstract: An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: September 3, 2019
    Assignees: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.
    Inventors: Tatsuya Shimoda, Satoshi Inoue, Kazuhiro Fukada, Kiyoshi Nishioka, Nobutaka Fujimoto, Masahiro Suzuki
  • Patent number: 10340388
    Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: July 2, 2019
    Assignees: Japan Advanced Institute of Science and Technology, Sumitomo Seika Chemicals Co., Ltd.
    Inventors: Satoshi Inoue, Tatsuya Shimoda, Nobutaka Fujimoto, Kiyoshi Nishioka, Shuichi Karashima
  • Patent number: 10322975
    Abstract: The present invention provides a method for producing a dispersion of fine ceramic particles, the method comprising: adding fine ceramic particles having a mean particle size of less than 1 ?m to a dispersion medium selected from the group consisting of a lower alcohol and water; and dispersing the fine ceramic particles in the dispersion medium using a rotor-stator homogenizer. The present invention enables the production of a highly homogeneous and stable dispersion of a nanosized ceramic powder, which is prone to aggregation and the homogeneous dispersion of which is difficult to form, by conducting a simple, uncomplicated operation.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: June 18, 2019
    Assignee: KYOTO UNIVERSITY
    Inventors: Tatsuya Hinoki, Kazuya Shimoda
  • Publication number: 20190164719
    Abstract: Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).
    Type: Application
    Filed: November 28, 2018
    Publication date: May 30, 2019
    Inventors: Chuhei OSHIMA, Masahiko TOMITORI, Anto YASAKA, Tatsuya SHIMODA
  • Publication number: 20190088501
    Abstract: A laminate by using a paste or solution containing aliphatic polycarbonates having an etching mask function is provided. A method of producing a laminate of the present invention includes a pattern forming step of forming a pattern 80 of a first oxide precursor layer in which a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates on an oxide layer 44 or on the second oxide precursor layer to be oxidized into the oxide layer 44; an etching step of, after the pattern forming step, etching the oxide layer 44 or the second oxide precursor layer that is not protected by the pattern 80; and a heating step of, after the etching step, heating the oxide layer 44 or the second oxide precursor layer, and the first oxide precursor layer to a temperature at which the binder is decomposed or higher.
    Type: Application
    Filed: November 21, 2016
    Publication date: March 21, 2019
    Inventors: Satoshi INOUE, Tatsuya SHIMODA, Kazuhiro FUKADA, Kiyoshi NISHIOKA
  • Publication number: 20190041744
    Abstract: [Problem] Provided is a composite member which can contribute to simple formation and/or increased quality of fine wiring. [Solution] A composite member 100 according to one embodiment of the present invention includes a base material, an aliphatic polycarbonate-containing layer with multiple island-shaped portions arranged on the base material, and a metal ink, wherein at least a surface of the aliphatic polycarbonate-containing layer with multiple island-shaped portions has a contact angle of 50° or more between pure water and the surface when exposed to ultraviolet light including a wavelength of 180 nm or more and 370 nm or less for 15 minutes, and the metal ink is arranged on the base material at at least a portion of a region sandwiched by the precursor layers.
    Type: Application
    Filed: July 21, 2016
    Publication date: February 7, 2019
    Inventors: Satoshi INOUE, Tatsuya SHIMODA, Kazuhiro FUKADA, Kiyoshi NISHIOKA, Masahiro SUZUKI
  • Publication number: 20180315861
    Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.
    Type: Application
    Filed: April 25, 2018
    Publication date: November 1, 2018
    Inventors: Satoshi INOUE, Tatsuya SHIMODA, Nobutaka FUJIMOTO, Kiyoshi NISHIOKA, Shuichi KARASHIMA
  • Publication number: 20180248109
    Abstract: The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200° C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5° C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2° C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500° C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.
    Type: Application
    Filed: August 26, 2016
    Publication date: August 30, 2018
    Inventors: Yuki Tagashira, Reijiro Shimura, Yuzuru Takamura, Jinwang Li, Tatsuya Shimoda, Toshiaki Watanabe, Nobuyuki Soyama