Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Abstract: According to the present invention, a method of producing a functional device includes the imprinting step and the functional solid material layer formation step. In the imprinting step, a functional solid material precursor layer obtained from a functional solid material precursor solution as a start material is imprinted so that a first temperature of a heat source for supplying heat to the functional solid material precursor layer is higher than a second temperature of the functional solid material precursor layer in at least part of a time period while a mold for forming an imprinted structure is pressed against the functional solid material precursor layer. In the functional solid material layer formation step, after the imprinting step, the functional solid material precursor layer is heat treated at a third temperature higher than the first temperature in an atmosphere containing oxygen to form a functional solid material layer from the functional solid material precursor layer.

Abstract: An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor (100) of the present invention includes a first oxide layer (possibly containing inevitable impurities) (32) consisting of lanthanum (La) and tantalum (Ta), which has a surface (32a) formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode (20) and a channel (52). Moreover, in the thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

Abstract: A process for forming an amorphous conductive oxide film, comprising the steps of: applying a composition which comprises (A1) a×y parts by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts and halides of a metal selected from among lanthanoids (excluding cerium), (A2) a×(1?y) parts by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts and halides of a metal selected from among lead, bismuth, nickel, palladium, copper and silver, (B) 1 part by mole of at least one metal compound selected from the group consisting of carboxylate salts, alkoxides, diketonates, nitrate salts, halides, nitrosylcarboxylate salts, nitrosylnitrate salts, nitrosylsulfate salts and nitrosylhalides of a metal selected from among ruthenium, iridium, rhodium and cobalt, and (C) a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols, ket

Abstract: Provided is a ferroelectric gate thin film transistor which includes: a channel layer; a gate electrode layer which controls a conductive state of the channel layer; and a gate insulation layer which is arranged between the channel layer and the gate electrode layer and is formed of a ferroelectric layer. The gate insulation layer (ferroelectric layer) has the structure where a PZT layer and a BLT layer (Pb diffusion preventing layer) are laminated to each other. The channel layer (oxide conductor layer) is arranged on a surface of the gate insulation layer (ferroelectric layer) on a BLT layer (Pb diffusion preventing layer) side. The ferroelectric gate thin film transistor can overcome various drawbacks which may be caused due to the diffusion of Pb atoms into an oxide conductor layer from a PZT layer including a drawback that a transmission characteristic of a ferroelectric gate thin film transistor is liable to be deteriorated (for example, a width of a memory window is liable to become narrow).

Abstract: A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.

Abstract: The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Abstract: The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

Abstract: A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm?1 to 1520 cm?1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm?1 to 1450 cm?1 and an infrared wave number range of from more than 1450 cm?1 to 1520 cm?1, a peak positioned within the infrared wave number range of from 1380 cm?1 to 1450 cm?1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm?1 to 1750 cm?1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transfo

Abstract: A composition containing a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. Method of manufacturing a film-coated substrate using the high order silane composition.

Abstract: A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate' (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.

Abstract: A transfer system (1) for transferring a fine transfer pattern (M1) formed in a mold (M) to a to-be-molded material (D) provided on a substrate (W) includes a positioning device (3) configured to position the substrate (W) relative to the mold (M) and to bond the mold (M) and the substrate (W) together after the positioning, and a transfer device (5) provided separately from the positioning device (3) and configured to receive the mold (M) and the substrate (W) positioned and bonded together by the positioning device (3), and to cure the to-be-molded material (D) while pressing the mold (M) and the substrate (W) thereby to perform transfer.

Abstract: A liquid-jet head includes a thin film member having a thin part and a thick part, and at least a part of the thin film member is formed of an electroformed film. In the liquid-jet head, the thin film member includes a metallic film forming the thin part, a first electroformed film formed on the metallic film, the first electroformed film forming the thick part, and a second electroformed film covering a connecting part between the metallic film and the first electroformed film.

Abstract: A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.

Abstract: A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

Abstract: A liquid droplet ejection head includes plural nozzles; plural individual liquid chambers; a common liquid chamber supplying liquid to the plural individual liquid chambers; a filter sheet member including plural pores formed therein to filter the liquid; and a frame body including an opening part and being in connection with the filter sheet member with adhesive. Further, a size of a region where the plural pores are formed is greater than the opening part of the frame body; an adhesive accumulation area is formed on an inner peripheral end of the opening part; and a size of the adhesive accumulation area in a protruding direction of the adhesive is greater than a size of an area between adjacent pores in the filter sheet member.

Abstract: The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.

Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.