Abstract: A process for producing a perfluoroalkyne compound includes an addition reaction step of adding Cl2, Br2, or I2 to a compound shown by the formula (1) CH3C?CR1 to obtain a compound shown by the formula (2) CH3CX2CX2R1, a fluorination reaction step of reacting the compound shown by the formula (2) with fluorine gas to obtain a compound shown by the formula (3) CF3CX2CX2R2, and a dehalogenation reaction step of contacting the compound shown by the formula (3) with a metal or an organometallic compound to obtain a perfluoroalkyne compound shown by the formula (4) CF3C?CR2. According to the present invention, a perfluoroalkyne compound can be produced at high productivity and high yield using starting raw materials which are environmentally friendly and industrially available. In the above formulas, R1 represents a methyl group or an ethyl group, X represents Cl, Br, or I, and R2 represents a trifluoromethyl group or a pentafluoroethyl group.

Abstract: A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: A plasma display device and a method for driving the plasma display device are provided, wherein deterioration in image quality in a period immediately after power-on can be restrained while improving dark contrast. When driving a PDP, by applying various drive pulses, that includes a phosphor layer containing a secondary electron emissive material in respective discharge cells, drive pulses having different pulse waveforms are generated in a period from power-on of the plasma display device to after a lapse of a predetermined period of time, and in a period after a lapse of the predetermined period of time.

Abstract: A method for driving a plasma display panel which is capable of improving contrast is provided. A plasma display apparatus which is capable of improving dark contrast and suppressing a degradation in image quality immediately after power-on is also provided. In the PDP, the peak potentials of drive pulses to be applied in order to drive display cells which have a phosphor layer containing a phosphor material and a secondary electron emitting material, are set as follows. The peak potential of a reset pulse, to be applied to each of the row electrodes in the first subfield within each unit display period, is set to be lower than the peak potential of a sustain pulse, to be applied to each of the row electrodes in every subfield to produce sustain discharge only in display cells that are in the lighting mode.

Abstract: A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Abstract: A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: A second planetary gear unit PR and a clutch C1 for outputting reduced speed rotation are located on one axial side of a first planetary gear unit PU, with an output unit located therebetween. A clutch C2 which connects/disconnects an input shaft 2 to/from a sun gear S2 of the planetary gear unit PU and a clutch C3 connects and disconnects the input shaft to/from a carrier CR2 of the planetary gear unit are on the other axial side of the first planetary gear unit PU. Compared with a transmission wherein a clutch C2 or clutch C3 is located between the second planetary gear unit PR and the planetary gear unit PU, the second planetary gear unit PR and the first planetary gear unit PU can be located closer together, and a member which transmits the reduced speed rotation can be made shorter. Further, compared to the case wherein, for example, the clutches C1, C2, C3 are located together on one axial side, oil supply to their servos is simplified.

Abstract: Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: A dry etching method wherein a resist film is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas. As the fluorine-containing compound, perfuloro-2-pentyne, perfuloro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used. Perfuloro-2-pentyne is produced by a process wherein a 1,1,1-trihalo-2,2,2-trifluoroethane is allowed to react with pentafluoropropionaldehyde to give a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene, and the thus-produced halo-octafluoro-2-pentene is dehydrohalogenated.

Abstract: A second planetary gear unit PR and a clutch C1 for outputting reduced speed rotation are located on one axial side of a first planetary gear unit PU, with an output unit located therebetween. A clutch C2 which connects/disconnects an input shaft 2 to/from a sun gear S2 of the planetary gear unit PU and a clutch C3 connects and disconnects the input shaft to/from a carrier CR2 of the planetary gear unit are on the other axial side of the first planetary gear unit PU. Compared with a transmission wherein a clutch C2 or clutch C3 is located between the second planetary gear unit PR and the planetary gear unit PU, the second planetary gear unit PR and the first planetary gear unit PU can be located closer together, and a member which transmits the reduced speed rotation can be made shorter. Further, compared to the case wherein, for example, the clutches C1, C2, C3 are located together on one axial side, oil supply to their servos is simplified.

Abstract: A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluoro-cyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Abstract: A storable and removable jump seat for use in a vehicle. The improved seat provide for convertible seating in the form of a folding jump seat provides conforming appearance, comfort, safety and practicality. The jump seat provides a safe, comfortable and easily storable seat that may be folded and stored against a wall within the vehicle's cargo area in order to expand the available cargo space. The jump seat assembly is also designed to be quickly and easily removable in order to increase the available cargo space within a vehicle. The jump seat may be quickly and easily reinstalled without the need for tools or additional assistance. Multiple jump seats may be arranged within a vehicle to provide a side by side seating arrangement.