Abstract: Provided are a water-absorbing agent composition of high quality (and stable quality) that can be produced without a decrease in productivity and is not colored even in a production process (or under production conditions) under high temperature conditions (under the condition of heating at 100° C. or higher), even when a polysaccharide is used as a sustainable raw material for at least part of the water-absorbing agent composition, and a method for producing the water-absorbing agent composition. The water-absorbing agent composition includes: a polyacrylic acid (salt)-based water-absorbing resin; a polysaccharide, and a reducing agent. The water-absorbing agent composition is surface-crosslinked, contains the polysaccharide in an amount of 10 mass% or more and contains the reducing agent in an amount of 10 ppm to 10000 ppm, and has a degree of coloration (YI value) of 60 or less.

Abstract: A programming device including a shape indication section which receives at least one first user operation for indicating a shape by specifying two or more portions among a plurality of tangible portions arranged at different positions with each other in a planar direction; and a control section which generates a command list for moving a control target section along the indicated shape.

Abstract: Provided are titanium oxide fine particles which are excellent in transparency and are less photocatalytically active while maintaining a high refractive index, a dispersion of such fine particles, and a method for producing such a dispersion. The method for producing a dispersion of iron-containing rutile titanium oxide fine particles including a step (1) of neutralizing an aqueous metal mineral acid salt solution containing Ti and Fe in Fe2O3/(TiO2+Fe2O3)=0.001 to 0.010 to form an iron-containing hydrous titanic acid; a step (2) of adding an aqueous hydrogen peroxide solution to form an aqueous solution of iron-containing peroxotitanic acid having an average particle size of 15 to 50 nm; a step (3) of adding a tin compound so as to satisfy TiO2/SnO2=6 to 16; a step (4) of adding a sol of silica-based fine particles which contain Si and a metal element M in SiO2/MOx/2=99.9/0.1 to 80/20, the addition being made so as to satisfy SiO2/(oxides of the other elements)=0.08 to 0.

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

Abstract: A film forming system includes: a film forming apparatus which includes a processing container, a stage provided in the processing container, a structure provided in the processing container and having recesses, and a window provided on a wall surface of the processing container; a measurement device which includes a light emitter, a light receiver, and a measurer configured to measure a light reflectance for each wavelength in the structure based on an intensity of light emitted to the structure and an intensity of light reflected from the structure; and a control device which includes an estimator configured to estimate a thickness of a film formed on a substrate based on the light reflectance for each wavelength in the structure, and a controller configured to stop film formation on the substrate when the estimated thickness of the film reaches a predetermined thickness.

Abstract: A substrate processing apparatus including: a processing container; a stage installed in the processing container and configured to place a substrate thereon; a ceiling plate installed at a position facing the stage in the processing container; a driver configured to raise and lower the stage; an exhaust port formed in a side wall of the processing container and configured to exhaust a gas in the processing container; and a controller configured to control conductance of a space between the exhaust port and a processing space between the stage and the ceiling plate by controlling the driver to adjust a distance between a peripheral edge portion of the stage and a facing member disposed at a position facing the peripheral edge portion in the processing container.

Abstract: A film forming apparatus includes a stage on which a substrate is mounted, a first container configured to accommodate the stage, a gas supply configured to supply gases containing two types of monomers into the first container to form a polymer film on the substrate mounted on the stage, a porous member arranged radially outward from a processing space, which is a space above the substrate, and configured to draw in polymers formed by the gases containing two types of monomers exhausted from the first container, and a heater configured to heat the porous member to a first temperature when the polymer film is formed on the substrate.

Abstract: An object of the present invention is to provide a compound that can be used as a more superior therapeutic agent for central nervous system diseases.

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Abstract: A heat treatment apparatus includes: a processing container extended in a vertical direction; and a heater provided to surround the processing container. The heater includes: a first insulator of a cylindrical shape that has a ceiling surface and an opening at a lower end; a heat generator provided along a circumferential direction on an inner circumferential side of the first insulating member; and a second insulator arranged along the circumferential direction of the first insulating member at a position adjacent to the heat generating elements.

Abstract: A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.

Abstract: A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.

Abstract: A control method of a film forming apparatus includes (a) acquiring a first temperature measured by a first temperature sensor in a tubular member in a processing container of the film forming apparatus; (b) calculating a first power to be output to a heating unit disposed in the processing container; (c) acquiring a second temperature measured by a second temperature sensor provided outside the tubular member in the processing container; (d) calculating a second power to be output to the heating unit; (e) calculating a predicted value of the second temperature at a predetermined time ahead, from the second temperature based on a prediction model; (f) outputting either the first power or the second power to the heating unit according to the predicted value of the second temperature; and (g) repeating (a) to (f) in a predetermined cycle.

Abstract: A heat treatment apparatus including: a cylindrical processing container; a heater configured to heat the processing container; and a cooler configured to cool the processing container, wherein the cooler includes: discharge holes provided at intervals in a longitudinal direction of the processing container, the discharge holes being configured to discharge a cooling medium toward the processing container; a branch configured to divide the cooling medium into a plurality of flowing paths that communicate with the discharge holes; and blowers provided for respective ones of the flowing paths, the blowers being configured to send the cooling medium to the discharge holes that communicate with the respective ones of the flowing paths.

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

Abstract: A heat treatment apparatus according to one aspect of the present disclosure includes a vertically long process chamber, a heater configured to heat the process chamber, and a cooler configured to cool the process chamber. The cooler includes a plurality of discharge holes provided at intervals along a longitudinal direction of the process chamber to discharge cooling fluid toward the process chamber and a plurality of shutters provided corresponding to the plurality of discharge holes. At least one of the plurality of shutters is configured to move to an open position independently of other shutters.

Abstract: A method is provided. In the method, a substrate having a first region and a second region on a substrate surface is provided. A film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region is supplied to the substrate surface. The second bond has a second bond energy lower than a first bond energy of the first chemical bond. A film is selectively formed in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond.

Abstract: A motor control system includes an MG, a battery, an SMR, and an MG-ECU. The MG-ECU is configured to control the MG in accordance with an instruction provided through communication. The MG-ECU is configured to execute autonomous power generation control of the MG in an event of a fault in the communication. The autonomous power generation control is control in which the MG-ECU causes the MG to generate a predetermined voltage not in accordance with the instruction. The MG-ECU is configured to, when a fault is detected in the communication, start the autonomous power generation control after the SMR has finished switching from an off state to an on state.

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

Abstract: Provided is a work vehicle that can be transported by being loaded onto a trailer without having the outriggers removed. The work vehicle (rough terrain crane) is transported by being loaded onto a low bed trailer including a low bed and a high portion (first high bed, second high bed) higher than the low bed in at least one of the front and the rear of the low bed, and includes: outrigger units (front outrigger unit, rear outrigger unit) that are mounted to the front and rear of a vehicle body; and a lift unit that lifts and lowers the outrigger units (front outrigger unit, rear outrigger unit with respect to the vehicle body.