Abstract: An LED wafer, an LED wafer detection device and an LED wafer detection method are provided. The LED wafer includes a wafer base, a plurality of LED chips, a plurality of positive test circuit layers, a plurality negative test circuit layers, a plurality of positive test contacts, and a plurality of negative test contacts. Each LED chip has a positive contact and a negative contact respectively electrically connected to the corresponding positive test circuit layer and the corresponding negative test circuit layer. The positive test contacts are respectively electrically connected to the positive test circuit layers, and the negative test contacts are respectively electrically connected to the negative test circuit layers. Whereby, when inputting an electric current into the positive test contacts, and then outputting the electric current from the negative test contacts, each LED chip is excited to generate a light source.

Abstract: An LED wafer, an LED wafer detection device and an LED wafer detection method are provided. The LED wafer includes a wafer base, a plurality of LED chips, a plurality of positive test circuit layers, a plurality negative test circuit layers, a plurality of positive test contacts, and a plurality of negative test contacts. Each LED chip has a positive contact and a negative contact respectively electrically connected to the corresponding positive test circuit layer and the corresponding negative test circuit layer. The positive test contacts are respectively electrically connected to the positive test circuit layers, and the negative test contacts are respectively electrically connected to the negative test circuit layers. Whereby, when inputting an electric current into the negative test contacts, and then outputting the electric current from the positive test contacts, each LED chip is excited to generate a light source.

Abstract: A wafer-grade LED detection device and a wafer-grade LED detection method are provided. The wafer-grade LED detection device includes a light-generating module for providing a first light beam that passes through an LED wafer to be converted into a second light beam, a light-filtering module adjacent to the LED wafer for receiving the second light beam that passes through the light-filtering module to be converted into a third light beam, and a light-detecting module adjacent to the light-filtering module for receiving and detecting the third light beam. A wavelength range of the second light beam is restricted by the light-filtering module, so that a wavelength range of the third light beam is smaller than the wavelength range of the second light beam. When the third light beam is received by the light-detecting module, the light-detecting module can detect the third light beam for obtaining relevant information.

Abstract: A film structure, a chip carrier assembly, and a chip carrier device are provided. The film structure includes a film and a plurality of micro-heaters. In which, the film is applied on a substrate, and the plurality of micro-heaters is disposed on top of the film or in the film. The chip carrier assembly includes a circuit substrate and the film structure. In which, the circuit substrate carries a plurality of chips. The chip carrier device includes the chip carrier assembly and a suction unit. In which, the suction unit is arranged above the chip carrier assembly to attach on and transfer the plurality of chips to the circuit substrate. The chips are disposed on the circuit substrate through solder balls, and the micro-heaters heat the solder balls that are in contact with the chips.