Patents by Inventor Te-Hao Lee
Te-Hao Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160322244Abstract: A wafer rotating apparatus includes a base, a carrying device, a first shaft gear, a power unit, a roller, a second shaft gear and a driving assembly. The base has an accommodating space which the carrying device is disposed in to accommodate the wafer. The first shaft gear is disposed on a side surface of the base. The power unit is assembled to a top of the base and connected to the first shaft gear. The roller is located under the carrying device and supports an edge of the wafer. The second shaft gear is disposed on the side surface of the base and connected to the roller. The driving assembly is connected between the first shaft gear and the second shaft gear. The power unit provides a power through the first gear, the driving unit and the second shaft gear to drive the roller to rotate the wafer.Type: ApplicationFiled: March 22, 2016Publication date: November 3, 2016Inventors: Yuan-Hao Chang, Te-Hao Lee, Ying-Ru Shih, Wen-Ching Hsu
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Patent number: 9466532Abstract: The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.Type: GrantFiled: March 23, 2012Date of Patent: October 11, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Hua Chu, Kuei-Sung Chang, Te-Hao Lee
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Patent number: 9452924Abstract: A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.Type: GrantFiled: October 12, 2012Date of Patent: September 27, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
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Patent number: 9450109Abstract: A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.Type: GrantFiled: March 14, 2013Date of Patent: September 20, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
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Patent number: 9133017Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: June 5, 2014Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Publication number: 20150217996Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: April 13, 2015Publication date: August 6, 2015Inventors: Chia-Hua Chu, Chun-Wen Cheng, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Te-Hao Lee
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Publication number: 20150158723Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: February 17, 2015Publication date: June 11, 2015Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 9006015Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: GrantFiled: January 24, 2013Date of Patent: April 14, 2015Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8987059Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: August 9, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 8969979Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.Type: GrantFiled: December 18, 2013Date of Patent: March 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Te-Hao Lee, Yuan-Chih Hsieh
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Publication number: 20140374885Abstract: The present disclosure relates to a method of etching a narrow gap using one or more parallel releasing structures to improve etching performance, and an associated apparatus. In some embodiments, the method provides a semiconductor substrate with a narrow gap having a sacrificial material. One or more parallel releasing structures are formed within the semiconductor substrate at positions that abut the narrow gap. An etching process is then performed to simultaneously remove the sacrificial material from the narrow gap along a first direction from the one or more parallel releasing structures and along a second direction, perpendicular to the first direction. By simultaneously etching the sacrificial material from both the direction of the narrow gap and from the direction of the one or more parallel releasing structures, the sacrificial material is removed in less time, since the etch is not limited by a size of the narrow gap.Type: ApplicationFiled: June 19, 2013Publication date: December 25, 2014Inventors: Kuei-Sung Chang, Te-Hao Lee
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Publication number: 20140353776Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: ApplicationFiled: June 5, 2014Publication date: December 4, 2014Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Patent number: 8828772Abstract: An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 um air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.Type: GrantFiled: March 5, 2012Date of Patent: September 9, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Te-Hao Lee
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Publication number: 20140206123Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: January 24, 2013Publication date: July 24, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8748205Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: November 30, 2012Date of Patent: June 10, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Patent number: 8729646Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.Type: GrantFiled: August 9, 2012Date of Patent: May 20, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
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Publication number: 20140103462Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.Type: ApplicationFiled: December 18, 2013Publication date: April 17, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Te-Hao Lee, Yuan-Chih Hsieh
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Publication number: 20140042562Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.Type: ApplicationFiled: August 9, 2012Publication date: February 13, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
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Patent number: 8623768Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.Type: GrantFiled: December 2, 2011Date of Patent: January 7, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Te-Hao Lee, Yuan-Chih Hsieh
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Publication number: 20130230939Abstract: An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 ?m air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.Type: ApplicationFiled: March 5, 2012Publication date: September 5, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.Inventor: Te-Hao LEE