Abstract: An integrated circuit includes a plurality of first layer deep lines, a plurality of first layer shallow lines, a plurality of second layer deep lines, and a plurality of second layer shallow lines. The integrated circuit also includes a first active device and a second active device coupled between a conducting path that has a low resistivity portion and a low capacitivity portion. The first active device has an output coupled to a first layer deep line that is in the low resistivity portion. The second active device has an input coupled to a first layer shallow line that is in the low capacitivity portion. The low resistivity portion excludes the first layer shallow lines and the second layer shallow lines, and the low capacitivity portion excludes the first layer deep lines and the second layer deep lines.

Abstract: An integrated circuit (IC) package includes a first die including first IC devices electrically connected to a first signal routing structure positioned at a first surface and a second surface opposite the first surface, wherein the first die has a first orientation of the first and second surfaces along a first direction, a second die comprising including second IC devices electrically connected to a second signal routing structure positioned at a third surface and a fourth surface opposite the first surface, wherein the second die has a second orientation of the third and fourth surfaces along the first direction opposite the first orientation, and a power distribution structure extending between the second and fourth surfaces and electrically connected to each of the first and second IC devices.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor is of a first conductivity type arranged in a first layer and includes a gate extending in a first direction and a first active region extending in a second direction perpendicular to the first direction. The second transistor is of a second conductivity type arranged in a second layer over the first layer and includes the gate and a second active region extending in the second direction. The semiconductor device further includes a first conductive line arranged in a third layer between the first layer and the second layer. The first conductive line electrically connects a first source/drain region of the first active region to a second source/drain region of the second active region. The gate includes a recess portion, wherein the first conductive line is at an elevation of the recess portion.

Abstract: An integrated circuit includes a first power rail, a first signal line, a first transistor and a second transistor. The first power rail is on a back-side of a substrate and is configured to supply a first supply voltage. The first signal line is on the back-side of the substrate and is separated from the first power rail. The first transistor has a first active region is in a front-side of the substrate. The first active region is overlapped by the first power rail and is electrically coupled to the first power rail. The second transistor has a second active region that is in the front-side of the substrate. The second active region is separated from the first active region, is overlapped by the first signal line, and is configured to receive the first supply voltage of the first power rail through the first active region of the first transistor.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor is of a first type in a first layer and includes a gate extending in a first direction and a first active region extending in a second direction perpendicular to the first direction. The second transistor is of a second type arranged in a second layer over the first layer and includes the gate and a second active region extending in the second direction. The semiconductor device further includes a first conductive line in a third layer between the first and second layers. The first conductive line electrically connects a first source/drain region of the first active region to a second source/drain region of the second active region. The gate comprises an intermediate portion disposed between the first active region and the second active region, wherein the first conductive line crosses the gate at the intermediate portion.

Abstract: A method of forming an integrated circuit (IC) package includes constructing a first power distribution structure on a first die included in the IC package, thereby electrically connecting the first power distribution structure to a second power distribution structure positioned on a back side of the first die, and bonding a third power distribution structure to the first power distribution structure, the third power distribution structure being positioned on a back side of a second die.

Abstract: An integrated circuit (IC) device includes a first plurality of active areas extending in a first direction and having a first pitch in a second direction perpendicular to the first direction, and a second plurality of active areas extending in the first direction, offset from the first plurality of active areas in the first direction, and having a second pitch in the second direction. A ratio of the second pitch to the first pitch is 3:2.

Abstract: An IC package includes a first die including a front side and a back side, the front side including a first signal routing structure, the back side including a first power distribution structure, and a second die including a front side and a back side, the front side including a second signal routing structure, the back side including a second power distribution structure. The IC package includes a third power distribution structure positioned between the first and second power distribution structures and electrically connected to each of the first and second power distribution structures.

Abstract: A method for fabricating a semiconductor structure includes depositing a first insulation material over a substrate, wherein the substrate includes an active region. The method further includes etching the first insulation material to define a first recess extending along a first direction at a first level of the first insulation material. The method further includes depositing a second insulation material lining with a sidewall of the first recess. The method further includes depositing a first metal line in the first recess.

Abstract: A method of making an integrated circuit includes steps of etching an opening in an insulating mask to expose a first dummy contact on a backside of the integrated circuit, depositing a conductive material into the opening, the conductive material contacting a sidewall of the first dummy contact, and recessing the conductive material to expose an end of the first dummy contact. The method also includes steps of depositing an insulating material over the conductive material in the opening, removing the first dummy contact from the insulating mask to form a first contact opening, and forming a first conductive contact in the first contact opening, the first conductive contact being electrically connected to the conductive material.

Abstract: An integrated circuit includes a first and second power rail extending in a first direction and being on a first level of a back-side of a substrate, a first and second active region and a first conductive line. The first power rail is configured to supply a first supply voltage. The second power rail is configured to supply a second supply voltage. The first and second active region extend in the first direction, and are on a second level of a front-side of the substrate opposite from the back-side. The first active region is overlapped by the first power rail. The second active region is overlapped by the second power rail. The first conductive line extends in the second direction, is on a third level of the back-side of the substrate, and overlaps the first and second active region.

Abstract: A semiconductor device and a method of testing the device are disclosed. In one aspect, the semiconductor device includes a first active region that extends along a first lateral direction and includes a plurality of first epitaxial structures. The semiconductor device also includes an interconnect structure that also extends along the first lateral direction and is disposed below the first active region, wherein at least one of the plurality of first epitaxial structures is electrically coupled to the interconnect structure. The interconnect structure includes at least a first portion that offsets from the first active region along a second lateral direction perpendicular to the first lateral direction.

Abstract: An integrated circuit (IC) device includes first and second power rails extending in a first direction, a first plurality of active areas extending in the first direction, and a second plurality of active areas extending in the first direction and offset from the first plurality of active areas in the first direction. The first power rail is electrically connected to first active areas of each of the first and second pluralities of active areas, the second power rail is electrically connected to second active areas of each of the first and second pluralities of active areas, the first plurality of active areas includes a third active area located between the first and second active areas and electrically connected to the second power rail, and the first and second active areas of the second plurality of active areas are adjacent active areas of the second plurality of active areas.

Abstract: In some embodiments, portions of a pattern, generated in a layout process, of a layer in an integrated circuit, such as those of a layer of metallic power lines in a power grid (PG), are removed after the layout process through a computer-implemented process analogous to solving the N-coloring problem. Through this post-processing removal process, pattern portions can be removed so as reduce the coverage of the layer in the fabricated integrated circuit to a desired extent without producing certain harmful effects, such as severing a powerline.

Abstract: A memory device is provided. The memory device includes first and second pull-up transistors. The first pull-up transistor is disposed over a semiconductor substrate, and including a first gate structure and two first source/drain structures at opposite sides of the first gate structure. The second pull-up transistor is laterally spaced apart from the first pull-up transistor, and including a second gate structure and two second source/drain structures at opposite sides of the second gate structure. The first and second gate structures extend along a first direction and laterally spaced apart from each other along a second direction intersected with the first direction. The first gate structure further extends along a sidewall of one of the second source/drain structures, and the second gate structure further extends along a sidewall of one of the first source/drain structures.

Abstract: A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.

Abstract: A method of fabricating an integrated circuit includes fabricating a set of transistors in a front-side of a substrate, fabricating a first set of vias in a back-side of the substrate, depositing a first set of conductive structures on the back-side on a first level, depositing a second set of conductive structures on the back-side on a second level thereby forming a set of power rails, fabricating a second set of vias in the back-side, and depositing a third set of conductive structures on the back-side on a third level. The first set of vias is electrically coupled to the set of transistors. The second set of vias is electrically coupled to the first and third set of conductive structures. A first structure of the first set of conductive structures is electrically coupled to a first via of the first set of vias.

Abstract: A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The method includes forming an isolation structure in a substrate to define an isolating region and forming a capacitor structure on an upper surface of the isolation structure and comprising a first semiconductor structure and a second semiconductor structure separated by an insulator pattern. The first semiconductor structure and the second semiconductor structure are formed with upper surfaces aligned with one another.

Abstract: In some embodiments, a method of making a semiconductor device includes forming a recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a semiconductor region, the recess having a first surface portion separated by a distance in a first direction from the semiconductor region by a portion of the first dielectric material; depositing a second dielectric material in the recess to form a second surface portion oriented at an oblique angle from the first surface portion; and depositing a conductive material in the recess.