Abstract: A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A ?-D-glucose oxidase and polyvinyl alcohol bearing styrylpyridinium groups are placed in 100 ?l of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.

Abstract: A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.

Abstract: A method of fabricating a semiconductor device having a recess channel structure is provided. A first recess is formed in a substrate. A liner and a filling layer are formed in the first recess. A portion of the substrate adjacent to the first recess and a portion of the liner and the filling layer are removed to form trenches. An insulation layer fills the trenches to form isolation structures. The filling layer is removed, using the liner as an etching stop layer, to expose the insulation layer. A portion of the exposed insulation layer is removed to form a second recess having divots adjacent to the sidewalls of the substrate. The liner is removed. A dielectric layer and a gate are formed over the substrate covering the second recess. Source and drain regions are formed in the substrate adjacent to the second recess.

Abstract: A high-voltage MOS device includes a first high-voltage well (HVW) region overlying a substrate, a second HVW region overlying the substrate, a third HVW region of an opposite conductivity type as that of the first and the second HVW regions overlying the substrate, wherein the HVPW region has at least a portion between the first HVNW region and the second HVNW region, an insulation region in the first HVNW region, the second HVNW region, and the HVPW region, a gate dielectric over and extending from the first HVNW region to the second HVNW region, a gate electrode on the gate dielectric, and a shielding pattern electrically insulated from the gate electrode over the insulation region. Preferably, the gate electrode and the shielding pattern have a spacing of less than about 0.4 ?m. The shielding pattern is preferably connected to a voltage lower than a stress voltage applied on the gate electrode.

Abstract: A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.

Abstract: Method for fabricating a self-aligned gate of a transistor including: forming a plurality of deep trench capacitors in a substrate, concurrently forming a surface strap and a contact pad on a surface of the substrate, wherein a spacing between the surface strap and the contact pad exposes a portion of an active area, filling the spacing with a dielectric layer, forming a photoresist pattern on the substrate, wherein the photoresist has an opening situated directly above the spacing between the surface strap and the contact pad, etching away the dielectric layer and a portion of a shallow trench isolation region through the opening thereby forming an upwardly protruding fin-typed channel structure, forming a gate dielectric layer on the upwardly protruding fin-typed channel structure, and forming a gate on the gate dielectric layer.

Abstract: A DRAM structure includes a substrate, a MOS transistor, a deep trench capacitor, a surface strap positioned on the surface of the substrate and interconnecting a drain of the MOS transistor and an electrode of the deep trench capacitor, wherein the sidewall and the top surface of the surface strap are covered with an insulating layer. A passing gate is positioned on the insulating layer.

Abstract: A high-voltage MOS device includes a first high-voltage well (HVW) region overlying a substrate, a second HVW region overlying the substrate, a third HVW region of an opposite conductivity type as that of the first and the second HVW regions overlying the substrate, wherein the HVPW region has at least a portion between the first HVNW region and the second HVNW region, an insulation region in the first HVNW region, the second HVNW region, and the HVPW region, a gate dielectric over and extending from the first HVNW region to the second HVNW region, a gate electrode on the gate dielectric, and a shielding pattern electrically insulated from the gate electrode over the insulation region. Preferably, the gate electrode and the shielding pattern have a spacing of less than about 0.4 ?m. The shielding pattern is preferably connected to a voltage lower than a stress voltage applied on the gate electrode.

Abstract: A semiconductor device includes a first high-voltage well having a first dopant disposed in a semiconductor substrate; a second high-voltage well having a second dopant disposed in the semiconductor substrate, laterally adjacent to the first high-voltage well; a low-voltage well having the second dopant disposed overlying the second high-voltage well; a drain region having the first dopant disposed in the first high-voltage well; a source having the first dopant disposed in the low-voltage well; and a gate disposed on the semiconductor substrate and laterally between the source and the drain, wherein the gate includes a thin gate dielectric and a gate electrode.

Abstract: An automatic focusing camera base has a seat, a motor, a focusing device, a contact set, and a transmission device. The motor is mounted on the seat and has a shaft. The focusing device is mounted on the seat, which can move relative to the seat. The contact set is mounted on the seat, connected to the motor and a detecting circuit for the zero adjustment of the focusing device and has a first conductive member connected to the shaft and a second conductive member. The transmission device is mounted between the motor and the focusing device and has an active member selectively contacts the second conductive member. The active member and the motor are responsible for driving the focusing device and activating the detecting circuit without a ray-emitter and a ray-interceptor. The structure of the automatic focusing camera base is simple and compact.

Abstract: An automatic focusing camera base has a seat, a motor, a focusing device and a transmission device. The motor is mounted and horizontally lies on the seat and has a shaft. The focusing device is mounted on the seat and can move relative to the seat. The transmission device is mounted between the motor and the focusing device and has an active member mounted around the shaft and being movable along the shaft and a passive member mounted pivotally on the seat, abutting and driven by the active member to pivot and move the focusing device. The transmission device are designed especially to cooperate with and allow the motor to horizontally lie on the seat instead of upright standing and therefore a thickness of the automatic focusing camera base along a linear line perpendicular to an axis of the motor is reduced.

Abstract: A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A ?-D-glucose oxidase and polyvinylalchol bearing styrylpyridinium groups are placed in 100 ?l of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.

Abstract: An auto-focusing camera has a base, a focusing element, a lens, a motor and a transmission assembly. The focusing element is mounted movably on the base. The lens is mounted on the focusing element. The motor is mounted and lies flatly on the base and has a shaft mounted rotatably to the motor. The transmission assembly connects to the shaft on the motor and the focusing element and allows the motor to move the focusing element through the transmission assembly. The motor lying on the base decreases a thickness of the auto-focusing camera along an axis of the lens and makes the auto-focusing camera thin and compact. The electrical appliance with the auto-focusing camera is thin, compact and salable.

Abstract: This invention is provided a biochip containing splitable reaction wells and method for producing same and application thereof. The invention avoids cross contamination or interference between different samples on the same biochip. In addition, the soft polymer film removed from reaction wells may be reused on different substrates, thereby saving the cost of experiment or clinical testing.

Abstract: Polyallylamine conjugates and applications thereof for biological signal amplification are provided by utilizing the essential amino group of polyallylamine to covalently bind with capture agents and signal molecules having the functional groups selected from a group consisting of —NHS, —CO, —S?O2 and —C?O—C?O. The resulting conjugates having more than one signaling entities can be further implemented for biological expression with enhancing effect on biological signal intensity, such that the sensitivity of detection for the variation between biological interactions is largely increased.

Abstract: The present invention provides a substrate for protein microarrays, whereby compound A and GPTS are mixed for coating onto a solid support to form a layer, wherein said compound A is selected from a group consisting of nitrocellulose, poly(styrene-co-maleic anhydride) and polyvinylidene fluoride. Moreover, the present invention also provides a protein microarray by depositing proteins on said layer of said substrate.

Abstract: A protein chip and the preparation thereof. The preparation includes providing a substrate with a positive photoresist thereon, forming a spot array valley in the positive photoresist using a spot pattern mask, forming an adhesive layer on the substrate and filling the spot array valley thereon, performing a full region exposure on the positive photoresist and removing the same, thereby leaving the adhesive layer as a spot array pattern on the substrate, and forming an immobilizing material cover the surface of the spot array pattern to obtain a 3-dimensional structure of the immobilizing material.

Abstract: A wafer processing method is provided for processing a plurality of wafer lots concurrently in a plurality of different tanks. Each wafer lot is assigned a specific start number, position number, tank number and wafer number. Upon a wafer completing a process in a tank, a finish signal is generated, and a next wafer lot information for a wafer lot that needs the completed tank for processing is loaded into a memory. Once the tank is free and available, the next wafer from a wafer lot is moved in while all other tanks are being processed independently and concurrently. The wafer lots do not need to queue in sequence for other wafer lots to complete processing in different tanks. Total processing time can therefore be reduced and through-put increased.

Abstract: An integrated circuit fabrication process for creating field oxide regions in a substrate is disclosed. In the process, masking layers of oxide, nitride and deposited silicon dioxide are formed on the substrate. A pattern that defines the field oxide regions in the substrate is introduced into the substrate through these masking layers. The field oxide region is bordered by steep sidewalls in a portion of the substrate and the masking layers overlying the substrate. A thin layer of oxide is grown on the exposed portion of the substrate, and a conformal second layer of nitride followed by a conformal layer of a polycrystalline material are formed over the substrate/mask structure. The polycrystalline layer is selectively removed, so that the only portion of the polycrystalline material that remains on the structure is the portion covering the sidewalls.