Patents by Inventor Ted Guo
Ted Guo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9593417Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.Type: GrantFiled: September 17, 2013Date of Patent: March 14, 2017Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Ted Guo, Steve H. Chiao, Alan A. Ritchie
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Patent number: 8968536Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.Type: GrantFiled: June 18, 2007Date of Patent: March 3, 2015Assignee: Applied Materials, Inc.Inventors: Adolph Miller Allen, Ki Hwan Yoon, Ted Guo, Hong S. Yang, Sang-Ho Yu
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Publication number: 20140053776Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.Type: ApplicationFiled: September 17, 2013Publication date: February 27, 2014Applicant: Applied Materials, Inc.Inventors: Wei Ti LEE, Ted GUO, Steve H. CHIAO, Alan A. RITCHIE
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Patent number: 8535443Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.Type: GrantFiled: July 24, 2006Date of Patent: September 17, 2013Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Ted Guo, Steve H. Chiao, Alan A. Ritchie
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Patent number: 7867900Abstract: Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer.Type: GrantFiled: September 29, 2008Date of Patent: January 11, 2011Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Mohd Fadzli Anwar Hassan, Ted Guo, Sang-Ho Yu
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Patent number: 7857947Abstract: Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.Type: GrantFiled: July 24, 2006Date of Patent: December 28, 2010Assignee: Applied Materials, Inc.Inventors: Alan A. Ritchie, Wei Ti Lee, Ted Guo
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Patent number: 7824743Abstract: Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.Type: GrantFiled: September 28, 2007Date of Patent: November 2, 2010Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Yen-Chih Wang, Mohd Fadzli Anwar Hassan, Ryeun Kwan Kim, Hyung Chul Park, Ted Guo, Alan A. Ritchie
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Publication number: 20090087585Abstract: Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.Type: ApplicationFiled: September 28, 2007Publication date: April 2, 2009Inventors: WEI TI LEE, Yen-Chih Wang, Mohd Fadzli Anwar Hassan, Ryeun Kwan Kim, Hyung Chul Park, Ted Guo, Alan A. Ritchie
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Publication number: 20090087983Abstract: Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer.Type: ApplicationFiled: September 29, 2008Publication date: April 2, 2009Inventors: WEI TI LEE, Mohd Fadzli Anwar Hassan, Ted Guo, Sang-Ho Yu
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Publication number: 20080308416Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.Type: ApplicationFiled: June 18, 2007Publication date: December 18, 2008Inventors: Adolph Miller Allen, Ki Hwan Yoon, Ted Guo, Hong S. Yang, Sang-Ho Yu
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Patent number: 7378002Abstract: An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.Type: GrantFiled: August 23, 2005Date of Patent: May 27, 2008Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Ted Guo, Sang-Ho Yu
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Patent number: 7186319Abstract: A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.Type: GrantFiled: January 5, 2005Date of Patent: March 6, 2007Assignee: Applied Materials, Inc.Inventors: Hong S. Yang, Tza-Jing Gung, Jian-Xin Lei, Ted Guo
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Publication number: 20070045103Abstract: An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.Type: ApplicationFiled: August 23, 2005Publication date: March 1, 2007Inventors: Wei Lee, Ted Guo, Sang-Ho Yu
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Publication number: 20070023144Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.Type: ApplicationFiled: July 24, 2006Publication date: February 1, 2007Inventors: Wei Lee, Ted Guo, Steve Chiao, Alan Ritchie
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Publication number: 20070022952Abstract: Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.Type: ApplicationFiled: July 24, 2006Publication date: February 1, 2007Inventors: Alan Ritchie, Wei Lee, Ted Guo
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Patent number: 7112528Abstract: The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminum (CVD Al) via fill with a metal wire, preferably copper, formed within a barrier layer. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.Type: GrantFiled: February 13, 2003Date of Patent: September 26, 2006Assignee: Applied Materials, Inc.Inventors: Liang-Yuh Chen, Ted Guo, Roderick Craig Mosley, Fusen Chen
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Publication number: 20060144703Abstract: A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.Type: ApplicationFiled: January 5, 2005Publication date: July 6, 2006Inventors: Hong Yang, Tza-Jing Gung, Jian-Xin Lei, Ted Guo
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Patent number: 6743714Abstract: The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free.Type: GrantFiled: February 11, 2002Date of Patent: June 1, 2004Assignee: Applied Materials, Inc.Inventors: Roderick Craig Mosely, Hong Zhang, Fusen Chen, Ted Guo, Liang-Yuh Chen
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Patent number: 6726776Abstract: The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free.Type: GrantFiled: August 9, 1999Date of Patent: April 27, 2004Assignee: Applied Materials, Inc.Inventors: Roderick Craig Mosely, Hong Zhang, Fusen Chen, Ted Guo
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Patent number: 6716733Abstract: The present invention relates to a method for depositing metal layers on substrates with improved surface morphology. According to one aspect of the invention, a metal is deposited by chemical vapor deposition on a substrate having an aperture formed therein. A metal is then deposited on the substrate by physical vapor deposition performed with a low substrate temperature. The substrate is then heated. The substrate may then receive a metal deposited by physical vapor deposition performed at a high temperature and an additional heating step. The aperture of the resulting substrate is filled with metal and is substantially void-free and has a smooth surface morphology.Type: GrantFiled: June 11, 2002Date of Patent: April 6, 2004Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Ted Guo