Abstract: In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.

Abstract: Provided is a plasma processing apparatus, which is loaded with a substrate to be processed on the voltage-applied electrode side and is able to achieve a uniform plasma processing characteristic on a substrate surface by correcting the distortion of an electric field in the edge portion and the distortion of plasma. There is provided a plasma processing apparatus, which introduces a processing gas into a processing chamber and excites a plasma in the processing chamber to carry out plasma processing on a substrate to be processed placed on a cathode electrode inside the processing chamber, the apparatus being provided with a ring that encompasses the outer peripheral edge portion of the substrate and has a clearance between its encompassing surface and the upper surface and the outer peripheral edge of the substrate.

Abstract: In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.

Abstract: In a sputtering apparatus, in a vacuum chamber having a gas supply and a gas discharge functions, a substrate is set to a supporting part therefor and a target is disposed at an electrode connected with a power source within a plane opposite to the substrate, so as to form a film while holding the substrate in a fixed state to the target. The electrode is divided into three or more electrode parts, the target is divided and disposed on the three or more electrode parts within the plane, and a magnet is arranged for each divided target at a position where a line of magnetic force on a surface of the each target is generated by each magnet.

Abstract: The film thickness of a thin film formed on substrate 14 is made symmetrical and uniform by eliminating currents of gas over target 9 by performing film deposition in a condition with gas supply and vacuum evacuation cut off, after adjusting the interior of vacuum chamber 1 to the predetermined pressure.