Abstract: A method for fabricating a semiconductor device structure includes forming a first conductive layer over a semiconductor substrate, and forming a dielectric layer over the first conductive layer. The method also includes replacing a portion of the dielectric layer with an energy removable layer, and performing an etching process to form a first opening in the energy removable layer and a second opening in the dielectric layer. The first opening is in a pattern-dense region and the second opening is in a pattern-loose region. The method further includes depositing a lining layer over the energy removable layer and the dielectric layer. The lining layer entirely fills the first opening to form a first conductive plug, and the lining layer partially fills the second opening.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate, a semiconductor fin and a filled trench. The semiconductor fin extends upwards from the semiconductor substrate. The filled trench is formed in the semiconductor fin and includes a first sigma portion, a second sigma portion and a middle portion. The first sigma portion is partially filled by a semiconductor buffer region, and an unfilled part of the first sigma portion is filled by a doped semiconductor region grown on the semiconductor buffer region. The second sigma portion is filled by the semiconductor buffer region. The middle portion connects the first sigma portion to the second sigma portion, and the middle portion is filled by the semiconductor buffer region.

Abstract: The present disclosure provides a semiconductor device including a semiconductor substrate, a semiconductor fin, a first filled trench and a second filled trench. The semiconductor fin is extending upwards along a first direction from the semiconductor substrate, comprising a channel region. The first filled trench and a second filled trench are formed in the semiconductor fin. The first filled trench, the channel region, and the second filled trench are sequentially arranged along a second direction. A width of the channel region along a third direction is different from a width of the first filled trench along the third direction. The first direction, the second direction, and the third direction are perpendicular to each other.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%. The first semiconductor structure includes a plurality of first composite conductive features, wherein at least one of the plurality of first composite conductive features includes a first protection liner, a first graphene liner in the first protection liner and a first core conductor in the first graphene liner.

Abstract: The present application discloses a method for fabricating a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps for reducing parasitic capacitance. The method includes providing a first semiconductor die, forming a connecting dielectric layer above the first semiconductor die, forming a first trench in the connecting dielectric layer, forming a plurality of sacrificial spacers on sides of the first trench, forming a first protection structure in the first trench, and performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material and the first protection structure is formed of copper, aluminum, titanium, tungsten, or cobalt.

Abstract: The present disclosure provides a semiconductor device structure with a manganese-containing conductive plug and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate, and a dielectric layer disposed over the first conductive layer. The semiconductor device structure also includes a first conductive plug penetrating through the dielectric layer and in a pattern-dense region, and a lining layer covering the dielectric layer and the first conductive plug. The lining layer and the first conductive plug include manganese. The semiconductor device structure further includes a second conductive plug penetrating through the lining layer and the dielectric layer and in a pattern-loose region. The second conductive plug is separated from the dielectric layer by a portion of the lining layer.

Abstract: The present disclosure provides a semiconductor device structure with a manganese-containing conductive plug and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate, and a dielectric layer disposed over the first conductive layer. The semiconductor device structure also includes a first conductive plug penetrating through the dielectric layer and in a pattern-dense region, and a lining layer covering the dielectric layer and the first conductive plug. The lining layer and the first conductive plug include manganese. The semiconductor device structure further includes a second conductive plug penetrating through the lining layer and the dielectric layer and in a pattern-loose region. The second conductive plug is separated from the dielectric layer by a portion of the lining layer.

Abstract: A method for fabricating a semiconductor device structure includes forming a first conductive layer over a semiconductor substrate, and forming a dielectric layer over the first conductive layer. The method also includes replacing a portion of the dielectric layer with an energy removable layer, and performing an etching process to form a first opening in the energy removable layer and a second opening in the dielectric layer. The first opening is in a pattern-dense region and the second opening is in a pattern-loose region. The method further includes depositing a lining layer over the energy removable layer and the dielectric layer. The lining layer entirely fills the first opening to form a first conductive plug, and the lining layer partially fills the second opening.

Abstract: The present application discloses a method for fabricating a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps for reducing parasitic capacitance. The method includes providing a first semiconductor die, forming a connecting dielectric layer above the first semiconductor die, forming a first trench in the connecting dielectric layer, forming a plurality of sacrificial spacers on sides of the first trench, forming a first protection structure in the first trench, and performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material and the first protection structure is formed of copper, aluminum, titanium, tungsten, or cobalt.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first crack-detecting structure positioned in the substrate and including a first insulating stack inwardly positioned in the substrate, a first bottom conductive layer positioned on the first insulating stack, and a first filler layer positioned on the first bottom conductive layer; and a second crack-detecting structure positioned adjacent to the first crack-detecting structure and including a second insulating stack inwardly positioned in the substrate, a second bottom conductive layer positioned on the second insulating stack, and a second filler layer positioned on the second bottom conductive layer.

Abstract: The present application discloses a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps reducing parasitic capacitance and a method for fabricating the semiconductor device. The semiconductor device includes a connection structure including a connecting dielectric layer, a first protection structure positioned in the connecting dielectric layer and positioned adjacent to a perimeter of the connecting dielectric layer, and a plurality of air gaps positioned on sides of the first protection structure. The first protection structure is formed of copper, aluminum, titanium, tungsten, cobalt, the like, or a combination thereof.

Abstract: The present application discloses a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps reducing parasitic capacitance and a method for fabricating the semiconductor device. The semiconductor device includes a connection structure including a connecting dielectric layer, a first protection structure positioned in the connecting dielectric layer and positioned adjacent to a perimeter of the connecting dielectric layer, and a plurality of air gaps positioned on sides of the first protection structure. The first protection structure is formed of copper, aluminum, titanium, tungsten, cobalt, the like, or a combination thereof.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate, a semiconductor fin and a filled trench. The semiconductor fin extends upwards from the semiconductor substrate. The filled trench is formed in the semiconductor fin and includes a first sigma portion, a second sigma portion and a middle portion. The first sigma portion is partially filled by a semiconductor buffer region, and an unfilled part of the first sigma portion is filled by a doped semiconductor region grown on the semiconductor buffer region. The second sigma portion is filled by the semiconductor buffer region. The middle portion connects the first sigma portion to the second sigma portion, and the middle portion is filled by the semiconductor buffer region.

Abstract: The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device includes a semiconductor substrate, a semiconductor fin and a filled trench. The semiconductor fin extends upwards from the semiconductor substrate. The filled trench is formed in the semiconductor fin and includes a first sigma portion, a second sigma portion and a middle portion. The first sigma portion is partially filled by a semiconductor buffer region, and an unfilled part of the first sigma portion is filled by a doped semiconductor region grown on the semiconductor buffer region. The second sigma portion is filled by the semiconductor buffer region. The middle portion connects the first sigma portion to the second sigma portion, and the middle portion is filled by the semiconductor buffer region.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first crack-detecting structure positioned in the substrate and including a first insulating stack inwardly positioned in the substrate, a first bottom conductive layer positioned on the first insulating stack, and a first filler layer positioned on the first bottom conductive layer; and a second crack-detecting structure positioned adjacent to the first crack-detecting structure and including a second insulating stack inwardly positioned in the substrate, a second bottom conductive layer positioned on the second insulating stack, and a second filler layer positioned on the second bottom conductive layer.

Abstract: The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device includes a semiconductor substrate, a semiconductor fin and a filled trench. The semiconductor fin extends upwards from the semiconductor substrate. The filled trench is formed in the semiconductor fin and includes a first sigma portion, a second sigma portion and a middle portion. The first sigma portion is partially filled by a semiconductor buffer region, and an unfilled part of the first sigma portion is filled by a doped semiconductor region grown on the semiconductor buffer region. The second sigma portion is filled by the semiconductor buffer region. The middle portion connects the first sigma portion to the second sigma portion, and the middle portion is filled by the semiconductor buffer region.

Abstract: The present disclosure relates to a fin structure and a method for manufacturing the same. The fin structure includes a substrate and at least one fin block. The fin block is disposed on the substrate. The fin block includes an isolation layer and a top fin layer. The isolation layer is disposed on the substrate. The top fin layer is disposed on the isolation layer. At least a portion of the top fin layer is exposed. The top fin layer is an epitaxial layer. The isolation layer is in contact with the top fin layer.

Abstract: The present disclosure relates to a fin structure and a method for manufacturing the same. The fin structure includes a substrate and at least one fin block. The fin block is disposed on the substrate. The fin block includes an isolation layer and a top fin layer. The isolation layer is disposed on the substrate. The top fin layer is disposed on the isolation layer. At least a portion of the top fin layer is exposed. The top fin layer is an epitaxial layer. The isolation layer is in contact with the top fin layer.

Abstract: A method for improving an optical proximity simulation is disclosed. First, multiple exposure data are determined. An original simulation result corresponding to the exposure result and generated from multiple original simulation parameters is provided. Then, an original deviation value from the original simulation result and the exposure result is verified to determine whether it is within a predetermined range. Next, the original simulation parameters are adjusted to obtain adjusted simulation parameters. The adjusted simulation parameters whose adjusted deviation value is within the predetermined range are collected to obtain an optical proximity correction model for outputting a pattern on a reticle.

Abstract: A mask and the design method thereof are provided. The mask includes a light-shielding area shielding off a light, wherein the light-shielding area includes a photonic crystal having a lattice constant, and a ratio of the lattice constant to a wavelength of the light is a specific value within a band gap of the photonic crystal.