Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

Abstract: A semiconductor package and a manufacturing method thereof are provided with the following steps, attaching a rear surface of a semiconductor die on a first redistribution structure by a die attach material, wherein the semiconductor die is pressed so that the die attach material is extruded laterally out and climbs upwardly to cover a sidewall of the semiconductor die, and after attaching, the die attach material comprises an extruded region surrounding the semiconductor die, a first shortest distance from a midpoint of an bottom edge of semiconductor die to a midpoint of an bottom edge of extruded region in a width direction is greater than a second shortest distance between an endpoint of the bottom edge of semiconductor die to an endpoint of the bottom edge of extruded region; and forming an insulating encapsulant on the first redistribution structure to encapsulate the semiconductor die and the die attach material.

Abstract: A semiconductor package and a manufacturing method thereof are provided with the following steps, attaching a rear surface of a semiconductor die on a first redistribution structure by a die attach material, wherein the semiconductor die is pressed so that the die attach material is extruded laterally out and climbs upwardly to cover a sidewall of the semiconductor die, and after attaching, the die attach material comprises an extruded region surrounding the semiconductor die, a first shortest distance from a midpoint of an bottom edge of semiconductor die to a midpoint of an bottom edge of extruded region in a width direction is greater than a second shortest distance between an endpoint of the bottom edge of semiconductor die to an endpoint of the bottom edge of extruded region; and forming an insulating encapsulant on the first redistribution structure to encapsulate the semiconductor die and the die attach material.

Abstract: Semiconductor package s and methods of forming the same are disclosed. The semiconductor package includes a chip, a redistribution circuit structure and a UBM pattern. The redistribution circuit structure is disposed over and electrically connected to the chip and includes a topmost conductive pattern. The UBM pattern is disposed over and electrically connected to the topmost conductive pattern, wherein the UBM pattern includes a set of vias and a pad on the set of vias, wherein the vias are arranged in an array and electrically connected to the pad and the topmost conductive pattern.

Abstract: Semiconductor package s and methods of forming the same are disclosed. The semiconductor package includes a chip, a redistribution circuit structure and a UBM pattern. The redistribution circuit structure is disposed over and electrically connected to the chip and includes a topmost conductive pattern. The UBM pattern is disposed over and electrically connected to the topmost conductive pattern, wherein the UBM pattern includes a set of vias and a pad on the set of vias, wherein the vias are arranged in an array and electrically connected to the pad and the topmost conductive pattern.