Patents by Inventor Teodor K. Todorov

Teodor K. Todorov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8617915
    Abstract: In an annealing process, a Kesterite film is provided on a substrate. The Kesterite film and the substrate are generally planar, have an interface, and have a substrate exterior side and a Kesterite exterior side. An additional step includes locating the cap adjacent the Kesterite exterior side. A further step includes applying sufficient heat to the Kesterite film and the substrate for a sufficient time to anneal the Kesterite film. The annealing is carried out with the cap adjacent the Kesterite exterior side. In another aspect, the film is not limited to Kesterite, and the cap is employed without any precursor layer thereon. Solar cell manufacturing techniques employing the annealing techniques are also disclosed.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: December 31, 2013
    Assignee: International Business Machines Corporation
    Inventors: Supratik Guha, David B. Mitzi, Teodor K. Todorov, Kejia Wang
  • Publication number: 20120279565
    Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Application
    Filed: July 18, 2012
    Publication date: November 8, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Publication number: 20120222730
    Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.
    Type: Application
    Filed: March 1, 2011
    Publication date: September 6, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Oki Gunawan, Jeehwan Kim, David B. Mitzi, Devendra K. Sadana, Teodor K. Todorov
  • Publication number: 20120070936
    Abstract: In an annealing process, a Kesterite film is provided on a substrate. The Kesterite film and the substrate are generally planar, have an interface, and have a substrate exterior side and a Kesterite exterior side. An additional step includes locating the cap adjacent the Kesterite exterior side. A further step includes applying sufficient heat to the Kesterite film and the substrate for a sufficient time to anneal the Kesterite film. The annealing is carried out with the cap adjacent the Kesterite exterior side. In another aspect, the film is not limited to Kesterite, and the cap is employed without any precursor layer thereon. Solar cell manufacturing techniques employing the annealing techniques are also disclosed.
    Type: Application
    Filed: June 3, 2011
    Publication date: March 22, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Supratik Guha, David B. Mitzi, Teodor K. Todorov, Kejia Wang
  • Publication number: 20110094557
    Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Application
    Filed: October 27, 2009
    Publication date: April 28, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Publication number: 20110097496
    Abstract: A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Application
    Filed: March 5, 2010
    Publication date: April 28, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov