Patents by Inventor Teppei Adachi

Teppei Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210200083
    Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
    Type: Application
    Filed: March 11, 2021
    Publication date: July 1, 2021
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei ADACHI, Shinya YAMASHITA, Masaki OHASHI, Tomohiro KOBAYASHI, Kenichi OIKAWA, Takayuki FUJIWARA
  • Patent number: 11009793
    Abstract: A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: May 18, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masahiro Fukushima, Masayoshi Sagehashi, Koji Hasegawa, Teppei Adachi, Kazuhiro Katayama
  • Publication number: 20210141306
    Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
    Type: Application
    Filed: October 28, 2020
    Publication date: May 13, 2021
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei ADACHI, Shinya YAMASHITA, Masaki OHASHI, Takayuki FUJIWARA
  • Patent number: 10921710
    Abstract: A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: February 16, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei Adachi, Ryosuke Taniguchi, Kazuhiro Katayama
  • Publication number: 20200140592
    Abstract: A polymer comprising recurring units derived from a monomer (A) adapted to be decomposed to generate an acid upon light exposure, recurring units derived from a monomer (B) having an acid labile group, and recurring units derived from a monomer (C) having a phenolic hydroxyl group, an amount of residual monomer (A) in the polymer being up to 1.0 wt %, is prepared by feeding a monomer solution containing monomers (A), (B), and (C) in a solvent (S) to a reactor and effecting polymerization reaction in the reactor. The monomer solution has a monomer concentration of at least 35 wt %. The solvent (S) contains a compound having formula (S-1) or (S-2).
    Type: Application
    Filed: October 17, 2019
    Publication date: May 7, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Teppei Adachi, Masayoshi Sagehashi, Emiko Ono, Hideyuki Onozuka
  • Publication number: 20200133123
    Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.
    Type: Application
    Filed: October 8, 2019
    Publication date: April 30, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomohiro Kobayashi, Kenichi Oikawa, Masayoshi Sagehashi, Teppei Adachi
  • Patent number: 10457761
    Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: October 29, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Kenji Funatsu, Teppei Adachi
  • Patent number: 10310376
    Abstract: A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on ?-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: June 4, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei Adachi, Ryosuke Taniguchi, Koji Hasegawa, Kenji Yamada
  • Publication number: 20190064664
    Abstract: A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.
    Type: Application
    Filed: August 22, 2018
    Publication date: February 28, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masahiro Fukushima, Masayoshi Sagehashi, Koji Hasegawa, Teppei Adachi, Kazuhiro Katayama
  • Publication number: 20190033715
    Abstract: A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.
    Type: Application
    Filed: July 27, 2018
    Publication date: January 31, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Teppei Adachi, Ryosuke Taniguchi, Kazuhiro Katayama
  • Publication number: 20190033716
    Abstract: A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
    Type: Application
    Filed: July 23, 2018
    Publication date: January 31, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masaki Ohashi, Jun Hatakeyama, Teppei Adachi
  • Patent number: 10191373
    Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: January 29, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Teppei Adachi, Kenji Funatsu
  • Patent number: 10023674
    Abstract: A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: July 17, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masayoshi Sagehashi, Masahiro Fukushima, Koji Hasegawa, Teppei Adachi, Kazuhiro Katayama, Jun Hatakeyama
  • Patent number: 10012902
    Abstract: A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: July 3, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Teppei Adachi, Masaki Ohashi
  • Patent number: 9904169
    Abstract: A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.
    Type: Grant
    Filed: April 4, 2016
    Date of Patent: February 27, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Teppei Adachi, Satoshi Watanabe, Daisuke Domon, Keiichi Masunaga
  • Patent number: 9846360
    Abstract: A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C5-C8 ketone, C4-C6 alcohol, C3-C6 ether or C4-C9 ester and a second solvent which is a lactone ring-containing C6-C9 compound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: December 19, 2017
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Teppei Adachi
  • Patent number: 9829792
    Abstract: A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: November 28, 2017
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Koji Hasegawa, Jun Hatakeyama, Teppei Adachi
  • Patent number: 9760010
    Abstract: A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: September 12, 2017
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Teppei Adachi
  • Publication number: 20170242339
    Abstract: A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.
    Type: Application
    Filed: February 16, 2017
    Publication date: August 24, 2017
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Teppei Adachi, Masaki Ohashi
  • Publication number: 20170226252
    Abstract: A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.
    Type: Application
    Filed: February 7, 2017
    Publication date: August 10, 2017
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayoshi Sagehashi, Masahiro Fukushima, Koji Hasegawa, Teppei Adachi, Kazuhiro Katayama, Jun Hatakeyama