Patents by Inventor Teppei Adachi
Teppei Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9904169Abstract: A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.Type: GrantFiled: April 4, 2016Date of Patent: February 27, 2018Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Teppei Adachi, Satoshi Watanabe, Daisuke Domon, Keiichi Masunaga
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Patent number: 9846360Abstract: A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C5-C8 ketone, C4-C6 alcohol, C3-C6 ether or C4-C9 ester and a second solvent which is a lactone ring-containing C6-C9 compound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced.Type: GrantFiled: June 29, 2016Date of Patent: December 19, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Teppei Adachi
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Patent number: 9829792Abstract: A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.Type: GrantFiled: July 7, 2016Date of Patent: November 28, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Koji Hasegawa, Jun Hatakeyama, Teppei Adachi
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Patent number: 9760010Abstract: A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.Type: GrantFiled: June 8, 2016Date of Patent: September 12, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Teppei Adachi
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Publication number: 20170242339Abstract: A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.Type: ApplicationFiled: February 16, 2017Publication date: August 24, 2017Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Teppei Adachi, Masaki Ohashi
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Publication number: 20170226250Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.Type: ApplicationFiled: April 24, 2017Publication date: August 10, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kenji Funatsu, Teppei Adachi
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Publication number: 20170226252Abstract: A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.Type: ApplicationFiled: February 7, 2017Publication date: August 10, 2017Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Masayoshi Sagehashi, Masahiro Fukushima, Koji Hasegawa, Teppei Adachi, Kazuhiro Katayama, Jun Hatakeyama
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Publication number: 20170184967Abstract: A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on ?-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.Type: ApplicationFiled: December 8, 2016Publication date: June 29, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Teppei Adachi, Ryosuke Taniguchi, Koji Hasegawa, Kenji Yamada
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Publication number: 20170097567Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.Type: ApplicationFiled: December 19, 2016Publication date: April 6, 2017Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Teppei Adachi, Kenji Funatsu
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Publication number: 20170008982Abstract: A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.Type: ApplicationFiled: July 7, 2016Publication date: January 12, 2017Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Koji Hasegawa, Jun Hatakeyama, Teppei Adachi
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Publication number: 20170003590Abstract: A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C5-C8 ketone, C4-C6 alcohol, C3-C6 ether or C4-C9 ester and a second solvent which is a lactone ring-containing C6-C9 compound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced.Type: ApplicationFiled: June 29, 2016Publication date: January 5, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Teppei Adachi
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Publication number: 20160363866Abstract: A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.Type: ApplicationFiled: June 8, 2016Publication date: December 15, 2016Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Teppei Adachi
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Publication number: 20160299431Abstract: A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.Type: ApplicationFiled: April 4, 2016Publication date: October 13, 2016Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Teppei Adachi, Satoshi Watanabe, Daisuke Domon, Keiichi Masunaga
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Patent number: 9429846Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an ?-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.Type: GrantFiled: August 29, 2014Date of Patent: August 30, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Masayoshi Sagehashi, Teppei Adachi
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Publication number: 20160229940Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.Type: ApplicationFiled: February 4, 2016Publication date: August 11, 2016Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Teppei Adachi, Kenji Funatsu
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Publication number: 20160168296Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.Type: ApplicationFiled: December 7, 2015Publication date: June 16, 2016Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kenji Funatsu, Teppei Adachi
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Patent number: 9360760Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having a tertiary amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.Type: GrantFiled: May 20, 2015Date of Patent: June 7, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Teppei Adachi
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Publication number: 20160147142Abstract: A photomask blank has a chemically amplified positive resist film comprising (A) a polymer comprising recurring units having a specific substituent group on aromatic ring and recurring units having at least one fluorine atom, (B) a base resin which is decomposed under the action of acid to increase its solubility in alkaline developer, (C) an acid generator, and (D) a basic compound. The resist film is improved in age stability and antistatic film-receptivity.Type: ApplicationFiled: November 17, 2015Publication date: May 26, 2016Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Teppei Adachi, Satoshi Watanabe, Daisuke Domon, Keiichi Masunaga
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Publication number: 20150346600Abstract: A pattern is formed by coating a resist composition comprising a resin component comprising recurring units of formula (1) and a photoacid generator of formula (2) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 and R2 are C1-C3 alkyl, R4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R101, R102 and R103 are hydrogen or a monovalent hydrocarbon group, m and n are 0-5, p is 0-4, and L is a single bond or a divalent hydrocarbon group.Type: ApplicationFiled: May 22, 2015Publication date: December 3, 2015Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Teppei Adachi, Masayoshi Sagehashi, Masaki Ohashi, Koji Hasegawa, Tomohiro Kobayashi, Kenichi Oikawa
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Publication number: 20150338744Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having a tertiary amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.Type: ApplicationFiled: May 20, 2015Publication date: November 26, 2015Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Teppei Adachi