Abstract: An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum ?? of a peak based on the pole figure of the copper layer is within 5° and the tail width ?? of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1st step of performing heat treatment of a copper layer so that ?? is within 6° and the tail width ?? is within 25°, and after the 1st step, a 2nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1st step, so that ?? is within 5° and the tail width ?? is within 15°.

Abstract: This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a ?? of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.

Abstract: An object of the present invention is to provide a production method for efficiently producing a metal laminate having high bonding strength. A method for producing a metal laminate material comprising the steps of: sputter etching faces to be bonded of a stainless steel and an aluminum such that an oxide layer remains on each face; temporarily bonding the faces to be bonded of the stainless steel and the aluminum by roll pressure bonding; and thermally treating the temporarily bonded laminate material at a temperature lower than the recrystallization temperature of the stainless steel to thermally diffuse at least a metal element comprised in the stainless steel into the aluminum.

Abstract: An object of the present invention is to provide a method for producing a metal laminate material that maintains sufficient bonding strength and has superior production efficiency. A method for producing a metal laminate material by bonding two sheets, one sheet composed of a material M1 and the other sheet composed of a material M2, wherein each of M1 and M2 is a metal or alloy comprising any one or more selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Pd, Ag, In, Sn, Hf, Ta, W, Pb, and Bi, comprises the steps of subjecting the faces of the two sheets to be bonded to sputtering treatment with inert gas ions under vacuum such that oxide layers on surface layers remain; temporarily bonding the two sheets by roll pressure bonding; and conducting a thermal treatment to thereby bond the two sheets, and, when Tm1>Tm2 where Tm1 (K) is the melting point of M1 and Tm2(K) is the melting point of M2, the temperature of the thermal treatment is 0.45Tm2 or more and less than 0.

Abstract: This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire has crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher and a ?? of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area is 6% or less.

Abstract: This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle ? formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.

Abstract: An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum ?? of a peak based on the pole figure of the copper layer is within 5° and the tail width ?? of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1st step of performing heat treatment of a copper layer so that ?? is within 6° and the tail width ?? is within 25°, and after the 1st step, a 2nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1st step, so that ?? is within 5° and the tail width ?? is within 15°.

Abstract: A metal laminated substrate for an oxide superconducting wire is produced by removing, in a state where a copper foil to which rolling is applied at a draft of 90% or more is held at a temperature below a recrystallization temperature, an absorbed material on a surface of the copper foil by applying sputter etching to the surface of the copper foil; removing an absorbed material on a surface of a nonmagnetic metal sheet by applying sputter etching to the surface of the nonmagnetic metal sheet; bonding the copper foil and the metal sheet to each other by reduction rolls at an applied pressure of 300 MPa to 1500 MPa; orienting crystals of the copper by heating a laminated body obtained by bonding at a crystal orientation temperature of copper or above; and forming a protective layer on a copper-side surface of the laminated body by coating.

Abstract: A metal laminated substrate for an oxide superconducting wire is produced by removing, in a state where a copper foil to which rolling is applied at a draft of 90% or more is held at a temperature below a recrystallization temperature, an absorbed material on a surface of the copper foil by applying sputter etching to the surface of the copper foil; removing an absorbed material on a surface of a nonmagnetic metal sheet by applying sputter etching to the surface of the nonmagnetic metal sheet; bonding the copper foil and the metal sheet to each other by reduction rolls at an applied pressure of 300 MPa to 1500 MPa; orienting crystals of the copper by heating a laminated body obtained by bonding at a crystal orientation temperature of copper or above; and forming a protective layer on a copper-side surface of the laminated body by coating.