Abstract: A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having highly magnetic sputtering material provided on front surface thereof a magnet assembly operable to reciprocally scan across the length L in close proximity to rear surface of the target and the magnet assembly comprises: a back plate made of magnetic material; a first group of magnets arranged in a single line central to the back plate and having a first pole positioned to face the rear surface of the target; and, a second group of magnets provided around periphery of the back plate so as to surround the first group of magnets, the second group of magnets having a second pole, opposite the first pole, positioned to face the rear surface of the target.

Abstract: A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry area after processing is completed. The carriers are configured for supporting substrates of different sizes. The carriers are also configured for flipping the substrates such that both surfaces of the substrates may be processed.

Abstract: A system for transporting substrates from an atmospheric pressure to high vacuum pressure and comprising: a rough vacuum chamber having an entry valve and an exit opening; a high vacuum chamber having an entry opening, the high vacuum chamber coupled to the rough vacuum chamber such that the exit opening and the entry opening are aligned; a valve situated between the exit opening and the entry opening; a first conveyor belt provided in the rough vacuum chamber; a second conveyor provided in the high vacuum chamber; a sensing element provided in the high vacuum chamber to enable detection of broken substrates on the second conveyor; and, a mechanism provided on the second conveyor belt enabling dumping of broken substrates onto the bottom of the high vacuum chamber.

Abstract: Introduction of substrates into vacuum environment is accomplish by gradually reducing the number of substrates being transferred simultaneously as the clean and evacuated environment is progressed. Cassettes are maintained in clean atmospheric environment and do not enter the vacuum environment. Several vacuum locks are linearly staggered so as to introduce progressively higher level of vacuum environment. The number of substrates transported through this arrangement is a portion of the number of substrates present in each cassette. The staggered vacuum locks lead to a series of processing chambers, wherein a yet smaller number of substrates, e.g., one or two, are transported.

Abstract: A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet.

Abstract: A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behind the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. In certain embodiments, the movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. In certain embodiments, magnet power and/or speed varies as function of direction of magnet travel.

Abstract: Apparatus and methods are provided that enable processing of patterned layers on substrates using a detachable mask. Unlike prior art where the mask is formed directly over the substrate, according to aspects of the invention the mask is made independently of the substrate. During use, the mask is positioned in close proximity or in contact with the substrate so as to expose only portions of the substrate to processing, e.g., sputtering or etch. Once the processing is completed, the mask is moved away from the substrate and may be used for another substrate. The substrate may be cycled for a given number of substrates and then be removed for cleaning or disposal.

Abstract: A system is provided for etching patterned media disks. A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

Abstract: Disclosed are methods and apparatus for masking of substrates for deposition, and subsequent lifting of the mask with deposited material. Masking materials are utilized that can be used in high temperatures and vacuum environment. The masking material has minimal outgassing once inside a vacuum chamber and withstand the temperatures during deposition process. The mask is inkjeted over the wafers and, after deposition, removed using agitation, such as ultrasonic agitation, or using laser burn off.

Abstract: A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry area after processing is completed. Loading and unloading of substrates may be performed at one side of the system, or loading can be done at the entry side and unloading at the exit side.

Abstract: A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.

Abstract: An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening that exposes the part of the inner mask having the opening pattern, but cover the periphery of the inner mask.

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A linear transport chamber includes linear tracks and robot arms riding on the linear tracks to linearly transfer substrates along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers. A four-axis robot arm is disclosed, capable of linear translation, rotation and articulation, and z-motion.

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A linear transport chamber includes linear tracks and robot arms riding on the linear tracks to linearly transfer substrates along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers. A four-axis robot arm is disclosed, capable of linear translation, rotation and articulation, and z-motion.

Abstract: Systems and methods for optimally dechucking a wafer from an electrostatic chuck are described. The force on a lift-pin mechanism is monitored and a dechuck voltage is determined based on the force. The wafer is dechucked at the determined dechuck voltage.

Abstract: There is described a wafer processing system for thinned wafers that are easily broken during handling. The system protects against breakage during handling and provides for temperature controls during processing.

Abstract: A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.

Abstract: An arrangement for coupling RF energy for inductively coupled plasma chamber. The RF coil or radiator is embedded within a groove made in the ceiling of the chamber and an insulating filler covers the coil within the groove. The ceiling may be made of two plates: an upper plate made of conductive material and a bottom plate made of dielectric material. The two plates are in physical contact. A magnetic shield may be provided over the coil to control the spread of the magnetic field from the coil. Fluid channels may be made in the conductive plate to provide thermal control. Also, fluid conduits may be provided to allow injecting gas into the pace between the metal and dielectric plates.

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.