Abstract: A substrate processing system includes a processing chamber, an electrically floating substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode in a train of pulses of selectably variable duty cycle and magnitude to maintain a selected time averaged current, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on the floating substrate holder in the chamber. The floating substrate is biased in accord with the net charge thereon as controlled by the energetic electron flux. One embodiment includes two such ion sources.

Abstract: A disk gripper for gripping an insulating disk, such as a glass disk, at its edge during processing includes a contact device for contacting the edge of the insulating disk and a mechanism for moving the contact device between a contact position, in contact with the edge of the disk, and a retracted position. In a first processing station, a conductive coating is applied to a disk held by the gripper, with the contact device in the retracted position. In a second processing station, ions are generated in a plasma adjacent to the surface of the disk held by the gripper. The contact device is in the contact position in contact with the conductive coating, and a bias voltage is applied to the contact device in the second processing station. The ions are accelerated from the plasma toward the disk by the bias voltage applied to the conductive coating.

Abstract: A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, first and second ion sources located in the chamber, and a power source for energizing the first and second ion sources. Each ion source ionizes the process gas to produce ions for processing a substrate disposed on the substrate holder. The first and second ion sources include first and second anodes, respectively. The power source energizes the first and second anodes in a time multiplexed manner, such that only one of the first and second ion sources is energized at any time and interactions between ion sources are eliminated.

Abstract: A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on a substrate holder in the chamber. One embodiment includes two such ion sources. In this case, the power source energizes the first and second anodes and the cathodes in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.