Abstract: A semiconductor device includes a charge pump circuit 1; a voltage feeding terminal 4; a first impedance device QN3 for switching on/off an electric current path between the charge pump circuit 1 and a non-volatile memory; a second impedance device QN2 for switching on/off an electric current path between the voltage feeding terminal and the non-volatile memory; and a control circuit 5, to which a voltage is supplied from the charge pump circuit 1, for controlling the first and second impedance devices QN3 and QN2.

Abstract: A charge pump apparatus which comprises first and second active capacitors in series, having a common node between them. The second node of the second active capacitor is coupled to a particular node in the charge pump which drives an output of the charge pump. A pump clock is connect to the first lead of the first active capacitor. A voltage clamp is connected to the particular node and provides a bias point. A dynamic biasing circuit is connected to the common node and charges the common node and the particular node during intervals between transitions of the pump clock to keep both the first and second active capacitors activated during the transitions of the pump clock.

Abstract: A method for programming a flash memory array which insures fast programming to substantially all of the cells in the array, without over-programming, based on providing a pattern of program retry pulses which have respective pulse widths and pulse heights which vary according to a pattern. The pattern includes a combination of both increasing pulse widths and increasing pulse heights. The pattern includes a first phase which completes in a specified amount of time including a predetermined number of retries so that substantially all of the cells in the array are programmed within the first phase. A second phase of the patter involves a sequence of higher energy pulses addressed to programming the slowest cells in the array. When used in a page program array, in which individual cells which are programmed fast do not receive subsequent retry pulses, a very fast and reliable programming scheme is achieved.

Abstract: Wordline driver circuitry drives a plurality of wordlines in a flash EEPROM memory array in a first mode which selects between a positive voltage and ground, and a second mode which selects between a negative voltage and ground. A first supply voltage selector supplies positive voltage during the first mode, and a second mode reference voltage, such as ground, in the second mode. A second supply voltage selector supplies the first mode reference voltage such as ground in the first mode, and the negative voltage during a second mode. An inverting driver has an input which receives a wordline select signal, and an output coupled to the wordline, a first supply voltage input connected to the first supply voltage selector, and second supply voltage input connected to the second supply voltage selector.