Abstract: An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate and including a plurality of wiring layers, and a first coil, a second coil, and a third coil which are formed above the semiconductor substrate. In a region located under the first coil and overlapping the first coil in plan view, the second and third coils CL2a and CL2b are disposed. The second and third coils are foamed in the same layer and electrically coupled in series to each other. Each of the second and third coils and the first coil are not coupled to each other via a conductor, but are magnetically coupled to each other.

Abstract: A SOP has a semiconductor chip. The chip includes a pair of a lower layer coil and an upper layer coil laminated through an interlayer insulating film formed therebetween, a first circuit unit electrically coupled to the upper layer coil, and a plurality of electrode pads. Further, it has a wire for electrically coupling the upper layer coil and the first circuit unit, a plurality of inner leads and outer leads arranged around the semiconductor chip, a plurality of wires for electrically coupling the electrode pads of the semiconductor chip and the inner leads, and a resin made sealing member for covering the semiconductor chip. The wire extends along the extending direction of the wires.

Abstract: A wiring structure thereof includes a first interlayer insulating film, a first wiring and a first electrode for the capacitive element embedded in the first interlayer insulating film, a barrier insulating film formed over the first interlayer insulating film to cover the wiring and the electrode, a second interlayer insulating film formed over the barrier insulating film, and a second wiring and a second electrode for the capacitive element embedded in the second interlayer insulating film. The lower surface of the second wiring is positioned in the middle of the thickness of the second interlayer layer film, and the lower surface of the second electrode is in contact with the barrier insulating film. The barrier insulating film of a portion interposed between both electrodes functions as a capacitance insulating film of the capacitive element and is thicker than the barrier insulating film of a portion covering the first wiring.

Abstract: Both enhancement of embeddability of a wiring groove and suppression of the generation of a coupling failure between a wiring and a coupling member are simultaneously achieved. In a cross-section perpendicular to a direction passing through the contact and a direction in which the second wiring extends, the center of the contact is more close to a first side surface of the second wiring than the center of the second wiring. In addition, when a region where the first side surface of the second wiring overlaps the contact in the direction in which the second wiring extends, is set to be an overlapping region, at least the lower part of the overlapping region has an inclination steeper than that of other portions of the side surface of the second wiring.

Abstract: A wiring structure thereof includes a first interlayer insulating film, a first wiring and a first electrode for the capacitive element embedded in the first interlayer insulating film, a barrier insulating film formed over the first interlayer insulating film to cover the wiring and the electrode, a second interlayer insulating film formed over the barrier insulating film, and a second wiring and a second electrode for the capacitive element embedded in the second interlayer insulating film. The lower surface of the second wiring is positioned in the middle of the thickness of the second interlayer layer film, and the lower surface of the second electrode is in contact with the barrier insulating film. The barrier insulating film of a portion interposed between both electrodes functions as a capacitance insulating film of the capacitive element and is thicker than the barrier insulating film of a portion covering the first wiring.

Abstract: Both enhancement of embeddability of a wiring groove and suppression of the generation of a coupling failure between a wiring and a coupling member are simultaneously achieved. In a cross-section perpendicular to a direction passing through the contact and a direction in which the second wiring extends, the center of the contact is more close to a first side surface of the second wiring than the center of the second wiring. In addition, when a region where the first side surface of the second wiring overlaps the contact in the direction in which the second wiring extends, is set to be an overlapping region, at least the lower part of the overlapping region has an inclination steeper than that of other portions of the side surface of the second wiring.

Abstract: Both enhancement of embeddability of a wiring groove and suppression of the generation of a coupling failure between a wiring and a coupling member are simultaneously achieved. In a cross-section perpendicular to a direction passing through the contact and a direction in which the second wiring extends, the center of the contact is more close to a first side surface of the second wiring than the center of the second wiring. In addition, when a region where the first side surface of the second wiring overlaps the contact in the direction in which the second wiring extends, is set to be an overlapping region, at least the lower part of the overlapping region has an inclination steeper than that of other portions of the side surface of the second wiring.