Patents by Inventor Terutaka Mori
Terutaka Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110014727Abstract: In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.Type: ApplicationFiled: September 16, 2010Publication date: January 20, 2011Inventors: Akira YABUSHITA, Yasunori Narizuka, Susumu Kasukabe, Terutaka Mori, Etsuko Takane, Akio Hasebe, Kenji Kawakami
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Publication number: 20090209053Abstract: To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multilayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multilayer film. A clamping member is provided on the frame to make the multilayer film project out to eliminate slack in the multilayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member.Type: ApplicationFiled: March 20, 2009Publication date: August 20, 2009Inventors: Susumu KASUKABE, Terutaka Mori, Akihiko Ariga, Hidetaka Shigi, Takayoshi Watanabe, Ryuji Kono
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Patent number: 7541202Abstract: To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member.Type: GrantFiled: September 12, 2007Date of Patent: June 2, 2009Assignee: Renesas Technology Corp.Inventors: Susumu Kasukabe, Terutaka Mori, Akihiko Ariga, Hidetaka Shigi, Takayoshi Watanabe, Ryuji Kono
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Patent number: 7390732Abstract: A semiconductor device capable of facilitating high density mounting at low cost without causing any defective conduction at the time of connection to a substrate, a mounting structure thereof and a method of fabrication thereof, characterized in that pyramidal bump electrodes are bonded onto pad electrodes arranged on a semiconductor chip to form the semiconductor device.Type: GrantFiled: July 15, 1998Date of Patent: June 24, 2008Assignee: Hitachi, Ltd.Inventors: Takayoshi Watanabe, Hidetaka Shigi, Susumu Kasukabe, Terutaka Mori
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Patent number: 7351597Abstract: The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.Type: GrantFiled: May 18, 2007Date of Patent: April 1, 2008Assignee: Renesas Technology Corp.Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
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Publication number: 20080029763Abstract: A probe sheet or a connecting sheet with good transmission characteristics and flexibility comprising contact terminals capable of contacting at a plurality of points and in high density, without applying damages on an electrode pad which is a contact subject is provided. Further, a high-speed transmission circuit capable of designing signal wirings with aligned impedance to have wide width even with a thin insulating film is achieved to provide a probe sheet or a connecting sheet with reduced loss of high-speed transmission signals. Moreover, the transmission circuit is applied to a probe card using a probe sheet, an inspecting method of (a method of manufacturing) a semiconductor device using the same, and a connecting sheet having an excellent high-frequency characteristic.Type: ApplicationFiled: April 26, 2007Publication date: February 7, 2008Inventors: Susumu Kasukabe, Terutaka Mori, Yasunori Narizuka, Norio Chujo
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Publication number: 20080009082Abstract: To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member.Type: ApplicationFiled: September 12, 2007Publication date: January 10, 2008Inventors: Susumu Kasukabe, Terutaka Mori, Akihiko Ariga, Hidetaka Shigi, Takayoshi Watanabe, Ryuji Kono
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Patent number: 7285430Abstract: To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member.Type: GrantFiled: June 23, 2004Date of Patent: October 23, 2007Assignee: Hitachi, Ltd.Inventors: Susumu Kasukabe, Terutaka Mori, Akihiko Ariga, Hidetaka Shigi, Takayoshi Watanabe, Ryuji Kono
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Publication number: 20070218572Abstract: The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.Type: ApplicationFiled: May 18, 2007Publication date: September 20, 2007Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
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Patent number: 7219422Abstract: The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.Type: GrantFiled: January 29, 2004Date of Patent: May 22, 2007Assignee: Renesas Technology Corp.Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
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Patent number: 7198962Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.Type: GrantFiled: April 11, 2003Date of Patent: April 3, 2007Assignee: Hitachi, Ltd.Inventors: Ryuji Kohno, Tetsuo Kumazawa, Makoto Kitano, Akihiko Ariga, Yuji Wada, Naoto Ban, Shuji Shibuya, Yasuhiro Motoyama, Kunio Matsumoto, Susumu Kasukabe, Terutaka Mori, Hidetaka Shigi, Takayoshi Watanabe
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Publication number: 20060094162Abstract: In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.Type: ApplicationFiled: October 20, 2005Publication date: May 4, 2006Inventors: Akira Yabushita, Yasunori Narizuka, Susumu Kasukabe, Terutaka Mori, Etsuko Takane, Akio Hasebe, Kenji Kawakami
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Publication number: 20060043593Abstract: In the connecting apparatus for inspecting the semiconductor chip, in which contact terminals are electrically connected to each of the plurality of electrode pads formed on the semiconductor chips, a part of metal projections in the shape of quadrangular pyramid which constitute the contact terminals is composed of insulator in the present invention. Therefore, the inspection of semiconductor chips performed by simultaneously transmitting high-speed signals to the plurality of minute electrode pads arranged at a narrow pitch on the semiconductor chips can be realized.Type: ApplicationFiled: July 20, 2005Publication date: March 2, 2006Inventors: Terutaka Mori, Yasunori Narizuka, Akira Yabushita, Etsuko Takane, Akio Hasebe, Kenji Kawakami
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Publication number: 20040235207Abstract: To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member.Type: ApplicationFiled: June 23, 2004Publication date: November 25, 2004Inventors: Susumu Kasukabe, Terutaka Mori, Akihiko Ariga, Hidetaka Shigi, Takayoshi Watanabe, Ryuji Kono
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Publication number: 20040183556Abstract: Provided is a fabrication method of a semiconductor integrated circuit device which comprises forming a pushing mechanism by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal, placing an elastomer in the groove so that a predetermined amount exceeds the groove, and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. The present invention makes it possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.Type: ApplicationFiled: January 29, 2004Publication date: September 23, 2004Inventors: Yuji Wada, Susumu Kasukabe, Takehiko Hasebe, Yasunori Narizuka, Akira Yabushita, Terutaka Mori, Akio Hasebe, Yasuhiro Motoyama, Teruo Shoji, Masakazu Sueyoshi
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Patent number: 6759258Abstract: To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multiplayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multiplayer film. A clamping member is provided on the frame to make the multiplayer film project out to eliminate slack in the multiplayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member.Type: GrantFiled: October 9, 2001Date of Patent: July 6, 2004Assignee: Renesas Technology Corp.Inventors: Susumu Kasukabe, Terutaka Mori, Akihiko Ariga, Hidetaka Shigi, Takayoshi Watanabe, Ryuji Kono
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Publication number: 20030203521Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.Type: ApplicationFiled: April 11, 2003Publication date: October 30, 2003Inventors: Ryuji Kohno, Tetsuo Kumazawa, Makoto Kitano, Akihiko Ariga, Yuji Wada, Naoto Ban, Shuji Shibuya, Yasuhiro Motoyama, Kunio Matsumoto, Susumu Kasukabe, Terutaka Mori, Hidetaka Shigi, Takayoshi Watanabe
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Patent number: 6566150Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.Type: GrantFiled: June 17, 2002Date of Patent: May 20, 2003Assignee: Hitachi, Ltd.Inventors: Ryuji Kohno, Tetsuo Kumazawa, Makoto Kitano, Akihiko Ariga, Yuji Wada, Naoto Ban, Shuji Shibuya, Yasuhiro Motoyama, Kunio Matsumoto, Susumu Kasukabe, Terutaka Mori, Hidetaka Shigi, Takayoshi Watanabe
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Publication number: 20020182796Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.Type: ApplicationFiled: June 17, 2002Publication date: December 5, 2002Inventors: Ryuji Kohno, Tetsuo Kumazawa, Makoto Kitano, Akihiko Ariga, Yuji Wada, Naoto Ban, Shuji Shibuya, Yasuhiro Motoyama, Kunio Matsumoto, Susumu Kasukabe, Terutaka Mori, Hidetaka Shigi, Takayoshi Watanabe
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Patent number: 6455335Abstract: Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.Type: GrantFiled: August 31, 2000Date of Patent: September 24, 2002Assignee: Hitachi, Ltd.Inventors: Ryuji Kohno, Tetsuo Kumazawa, Makoto Kitano, Akihiko Ariga, Yuji Wada, Naoto Ban, Shuji Shibuya, Yasuhiro Motoyama, Kunio Matsumoto, Susumu Kasukabe, Terutaka Mori, Hidetaka Shigi, Takayoshi Watanabe