Patents by Inventor Tetsuhiro Suzuki
Tetsuhiro Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210257541Abstract: Provided is a magnetic tunnel junction element including: a magnetization pinned layer having a fixed magnetization direction; a first insulating layer which is provided on the magnetization pinned layer and is formed of an insulating material; a magnetization free layer provided on the first insulating layer; an adjacent layer which is provided adjacent to the magnetization free layer and is formed of a non-magnetic transition metal; and a cap layer which is formed to have a multilayer structure including at least one barrier layer formed of a non-magnetic transition metal and is provided on the adjacent layer.Type: ApplicationFiled: June 17, 2019Publication date: August 19, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Eiji KARIYADA, Hironobu TANIGAWA, Tetsuhiro SUZUKI
-
Patent number: 10586578Abstract: To accurately read data in a storage device provided with a cell having a variable resistance value. In a reference cell circuit, a resistance value changes to a predetermined initial value when an initialization signal exceeding a predetermined reversal threshold is input. A reference side signal source inputs a reference side read signal of a predetermined value not exceeding the predetermined reversal threshold to the reference cell circuit after the initialization signal is input to the reference cell circuit when there is an instruction to read with respect to a memory cell. A cell side signal source inputs a cell side read signal of the predetermined value to the memory cell after the initialization signal is input. A comparison unit compares a reference signal output from the reference cell circuit into which the reference side read signal has been input, and a cell signal output from the memory cell into which the cell side read current has been input, and acquires the comparison result as read data.Type: GrantFiled: January 23, 2017Date of Patent: March 10, 2020Assignee: SONY CORPORATIONInventor: Tetsuhiro Suzuki
-
Patent number: 10305024Abstract: Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.Type: GrantFiled: October 30, 2017Date of Patent: May 28, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventor: Tetsuhiro Suzuki
-
Publication number: 20190051338Abstract: To accurately read data in a storage device provided with a cell having a variable resistance value. In a reference cell circuit, a resistance value changes to a predetermined initial value when an initialization signal exceeding a predetermined reversal threshold is input. A reference side signal source inputs a reference side read signal of a predetermined value not exceeding the predetermined reversal threshold to the reference cell circuit after the initialization signal is input to the reference cell circuit when there is an instruction to read with respect to a memory cell. A cell side signal source inputs a cell side read signal of the predetermined value to the memory cell after the initialization signal is input. A comparison unit compares a reference signal output from the reference cell circuit into which the reference side read signal has been input, and a cell signal output from the memory cell into which the cell side read current has been input, and acquires the comparison result as read data.Type: ApplicationFiled: January 23, 2017Publication date: February 14, 2019Applicant: SONY CORPORATIONInventor: Tetsuhiro SUZUKI
-
Patent number: 10170689Abstract: The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.Type: GrantFiled: January 7, 2015Date of Patent: January 1, 2019Assignee: Renesas Electronics CorporationInventors: Hironobu Tanigawa, Tetsuhiro Suzuki, Katsumi Suemitsu, Takuya Kitamura, Eiji Kariyada
-
Publication number: 20180047892Abstract: Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.Type: ApplicationFiled: October 30, 2017Publication date: February 15, 2018Applicant: Renesas Electronics CorporationInventor: Tetsuhiro SUZUKI
-
Patent number: 9837601Abstract: Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.Type: GrantFiled: June 5, 2014Date of Patent: December 5, 2017Assignee: Renesas Electronics CorporationInventor: Tetsuhiro Suzuki
-
Patent number: 9508923Abstract: A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.Type: GrantFiled: June 3, 2015Date of Patent: November 29, 2016Assignee: Renesas Electronics CorporationInventor: Tetsuhiro Suzuki
-
Patent number: 9379312Abstract: A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.Type: GrantFiled: December 14, 2010Date of Patent: June 28, 2016Assignee: NEC CORPORATIONInventors: Tadahiko Sugibayashi, Eiji Kariyada, Kaoru Mori, Norikazu Ohshima, Shunsuke Fukami, Tetsuhiro Suzuki, Hironobu Tanigawa, Sadahiko Miura, Nobuyuki Ishiwata
-
Publication number: 20150295166Abstract: A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.Type: ApplicationFiled: June 3, 2015Publication date: October 15, 2015Applicant: Renesas Electronics CorporationInventor: Tetsuhiro SUZUKI
-
Publication number: 20150207063Abstract: The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.Type: ApplicationFiled: January 7, 2015Publication date: July 23, 2015Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Hironobu TANIGAWA, Tetsuhiro SUZUKI, Katsumi SUEMITSU, Takuya KITAMURA, Eiji KARIYADA
-
Patent number: 9082497Abstract: A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.Type: GrantFiled: October 14, 2011Date of Patent: July 14, 2015Assignee: Renesas Electronics CorporationInventor: Tetsuhiro Suzuki
-
Patent number: 8994130Abstract: A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate.Type: GrantFiled: January 28, 2010Date of Patent: March 31, 2015Assignee: NEC CorporationInventors: Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Norikazu Ohshima
-
Publication number: 20140374860Abstract: Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.Type: ApplicationFiled: June 5, 2014Publication date: December 25, 2014Applicant: RENESAS ELECTRONICS CORPORATIONInventor: Tetsuhiro SUZUKI
-
Publication number: 20140346518Abstract: A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction.Type: ApplicationFiled: August 8, 2014Publication date: November 27, 2014Inventors: Eiji Kariyada, Katsumi Suemitsu, Hironobu Tanigawa, Kaoru Mori, Tetsuhiro Suzuki, Kiyokazu Nagahara, Yasuaki Ozaki, Norikazu Ohshima
-
Patent number: 8884388Abstract: A magnetic memory element includes: a first magnetization free layer configured to be composed of ferromagnetic material with perpendicular magnetic anisotropy; a reference layer configured to be provided near the first magnetization free layer; a non-magnetic layer configured to be provided adjacent to the reference layer; and a step formation layer configured to be provided under the first magnetization free layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region configured to be connected with the first magnetization fixed region and the second magnetization fixed region. The first magnetization free layer has at least one of a step, a groove and a protrusion inside.Type: GrantFiled: March 9, 2011Date of Patent: November 11, 2014Assignee: NEC CorporationInventors: Shunsuke Fukami, Kiyokazu Nagahara, Tetsuhiro Suzuki
-
Patent number: 8830735Abstract: A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.Type: GrantFiled: November 23, 2011Date of Patent: September 9, 2014Assignee: Renesas Electronics CorporationInventors: Eiji Kariyada, Katsumi Suemitsu, Hironobu Tanigawa, Kaoru Mori, Tetsuhiro Suzuki, Kiyokazu Nagahara, Yasuaki Ozaki, Norikazu Ohshima
-
Patent number: 8791534Abstract: In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.Type: GrantFiled: June 16, 2011Date of Patent: July 29, 2014Assignee: NEC CorporationInventors: Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Norikazu Ohshima
-
Patent number: 8787076Abstract: A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.Type: GrantFiled: August 13, 2009Date of Patent: July 22, 2014Assignee: NEC CorporationInventors: Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima
-
Patent number: 8729648Abstract: A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region.Type: GrantFiled: April 16, 2013Date of Patent: May 20, 2014Assignee: Renesas Electronics CorporationInventors: Tetsuhiro Suzuki, Katsumi Suemitsu, Eiji Kariyada