Abstract: A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are placed corresponding to respective positions where a plurality of first wirings extended in a first direction intersects with a plurality of second wirings extended in a second direction which is substantially perpendicular to the first direction. The plurality of the laminated ferrimagnetic structure substances corresponds to the plurality of the magneto-resistive elements, respectively, is placed to have a distance of a predetermined range from the respective plurality of the magneto-resistive elements, and has a laminated ferrimagnetic structure. The magneto-resistive element includes a free layer having a laminated ferrimagnetic structure, a fixed layer, and a nonmagnetic layer interposed between the free layer and the fixed layer.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N?1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N?1.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: In an aspect of the present invention, a magnetic random access memory includes a substrate, a MTJ (Magnetic tunnel Junction) device formed above the substrate, a first wiring line formed above the substrate, and a second wiring line formed above the substrate. The MTJ device includes a pinned ferromagnetic layer which has a pinned magnetization, a free ferromagnetic lamination layer, and a tunnel barrier layer interposed between the pinned ferromagnetic layer and the free ferromagnetic lamination layer.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N?1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N?1.

Abstract: In an aspect of the present invention, a magnetic random access memory includes a substrate, a MTJ (Magnetic tunnel Junction) device formed above the substrate, a first wiring line formed above the substrate, and a second wiring line formed above the substrate. The MTJ device includes a pinned ferromagnetic layer which has a pinned magnetization, a free ferromagnetic lamination layer, and a tunnel barrier layer interposed between the pinned ferromagnetic layer and the free ferromagnetic lamination layer.

Abstract: A thin film magnetic head includes a recording pole layer that is divided into a tip portion, a wide rear portion, a flare portion, and a yoke portion as viewed from the air bearing surface (ABS). The tip portion and the wide rear portion directly contact a write gap layer. Part of the wide rear portion has a greater width that the tip portion. The wide rear portion is provided between the tip portion and the flare portion to reduce magnetic reluctance. Accordingly, it is possible to improve the pattern accuracy of the tip portion width by providing the flare portion, which reflects a large quantity of light, far from the ABS, while preventing an increase of the magnetic reluctance.

Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

Abstract: A magnetoresistive head includes a first ferromagnetic layer and a non-magnetic material layer adjacent to a center portion of the first ferromagnetic layer. A second ferromagnetic layer is provided adjacent to the non-magnetic metal layer. An anti-ferromagnetic layer covers the second ferromagnetic layer and the first ferromagnetic layer. The anti-ferromagnetic layer is non-planar at an area adjacent to the non-magnetic metal layer and the second ferromagnetic layer. A pair of electrodes is provided adjacent to the two edges of the anti-ferromagnetic layer.

Abstract: In order to obtain a magnetoresistive head which is high in reproducing sensitivity, free from distortion in reproduced waveforms and suitable for high bit density recording, the an MR head includes a magnetic circuit including upper yoke 2 and lower yoke 3 both made of a soft magnetic material and having one ends opposed to each other with gap 1 left therebetween, MR element A 5 magnetically coupled to the other end of upper yoke 2, MR element B 6 magnetically coupled to the other end of lower yoke 3, and back yoke 4 made of a magnetic material for magnetically coupling MR element A 5 and MR element B 6 to each other. Upper yoke 2 and lower yoke 3 are disposed without overlapping each other except at gap 1, and MR element A 5 and MR element B 6 are formed by simultaneous deposition.

Abstract: A magnetoresistive transducer showing a giant magnetoresistance effect has a multi-layer structure including first and second ferromagnetic layers separated by a non-magnetic layer. The second ferromagnetic layer has a magnetization pinned in a direction perpendicular to a direction of a signal magnetic field. An anti-ferromagnetic layer adjacent to the second ferromagnetic layer pins magnetization of the second ferromagnetic layer in a direction perpendicular to a direction of a signal magnetic field so that magnetizations of the first and second ferromagnetic layers have components perpendicular to the signal magnetic field and those components are anti-parallel to each other.

Abstract: In a magnetoresistive head, in which a longitudinal bias magnetic field application permanent magnet film 5 and an electrode 6 are disposed on each side of an MR element 4, the MR element 4, permanent magnet film 5 and electrode 6 are formed on a conductive under layer 3.